Abstract: A ferromagnetic memory device comprises a memory cell. wherein the memory cell includes a magnetic free layer including a magnetic layer, and wherein the magnetic free layer including a magnetic anisotropy energy gradient induced within the magnetic layer by plasma ion irradiation.

Abstract: A semiconductor device includes a free magnetization layer including a ferromagnetic layer and a nonmagnetic metal layer including current electrodes receiving an input current and Hall voltage electrodes outputting a Hall voltage. The Hall voltage is generated by an anomalous Hall effect occurring in the ferromagnetic layer of the free magnetization layer due to the input current flowing in the nonmagnetic metal layer. The Hall voltage has one of a local minimum value and a local maximum value when a value of the input current sequentially changes from a first value to a second value. One of the first value and the second value is greater than the other one of the first value and the second value.

Abstract: Disclosed are a spin logic device based on spin-charge conversion and a spin logic array using the same. A reconfigurable spin logic array according to an exemplary embodiment of the present invention may include: an input terminal receiving at least three current signals; a plurality of wires transmitting the current signal in connection with the input terminal and including a horizontal wire and a vertical wire which cross each other; a first gate array in which at least one first majority gate connected to the input terminal through the wires and implemented based on the spin logic device is arranged; and a second gate array in which at least one second majority gate connected to the first gate array through the wires and implemented based on the spin logic device is arranged.

Abstract: A spin logic device includes a first stage unit in which one side of the first magnetic layer is connected to an upper end of a first spin-charge conversion layer, a first dielectric layer is connected to a lower end of the other side of the first magnetic layer, a first conductive channel for receiving input current is connected to a lower end of the first dielectric layer, a first input portion formed of a conductor for receiving a first drive voltage is connected to an upper end of one side of the first magnetic layer, a second conductive channel for outputting first output current is connected to a lower end of the first spin-charge conversion layer, and a first conductor having a ground is connected to a lower end of the second conductive channel. A resistor for outputting steady current as the first output current may be connected between nodes on opposite ends of the second conductive channel.

Abstract: A spin logic device includes: a first conductive layer formed of a nonmagnetic conductive material and having one end receiving first current as an input; a ferromagnetic layer having magnetic anisotropy and having one end opposing the other end of the first conductive layer; and an antiferroelectric layer disposed between the other end of the first conductive layer and the one end of the ferromagnetic layer. A magnetization direction of the ferromagnetic layer may be determined based on a current direction of the first current of the first conductive layer.

Abstract: Disclosed art a magnetic tunnel junction device, a magnetic memory using the same, and a method for manufacturing the same. The method for manufacturing the magnetic tunnel junction device may include the steps of a lamination step of forming an initial multilayer structure including at least one metallic oxide layer and a metallic layer on a substrate; a heat treatment step of heat-treating the initial multilayer structure; and a device forming step of forming a magnetic tunnel junction device of a final multilayer structure in which at least one metallic oxide layer and the metallic layer are converted to at least one ferromagnetic material layer and the oxide layer by heat treatment.

Abstract: A spin logic device includes a first stage unit in which one side of the first magnetic layer is connected to an upper end of a first spin-charge conversion layer, a first dielectric layer is connected to a lower end of the other side of the first magnetic layer, a first conductive channel for receiving input current is connected to a lower end of the first dielectric layer, a first input portion formed of a conductor for receiving a first drive voltage is connected to an upper end of one side of the first magnetic layer, a second conductive channel for outputting first output current is connected to a lower end of the first spin-charge conversion layer, and a first conductor having a ground is connected to a lower end of the second conductive channel. A resistor for outputting steady current as the first output current may be connected between nodes on opposite ends of the second conductive channel.

Abstract: Disclosed are a spin logic device based on spin-charge conversion and a spin logic array using the same. A reconfigurable spin logic array according to an exemplary embodiment of the present invention may include: an input terminal receiving at least three current signals; a plurality of wires transmitting the current signal in connection with the input terminal and including a horizontal wire and a vertical wire which cross each other; a first gate array in which at least one first majority gate connected to the input terminal through the wires and implemented based on the spin logic device is arranged; and a second gate array in which at least one second majority gate connected to the first gate array through the wires and implemented based on the spin logic device is arranged.

Abstract: Disclosed are a spin logic device based on spin-charge conversion and a spin logic array using the same. A reconfigurable spin logic array according to an exemplary embodiment of the present invention may include: an input terminal receiving at least three current signals; a plurality of wires transmitting the current signal in connection with the input terminal and including a horizontal wire and a vertical wire which cross each other; a first gate array in which at least one first majority gate connected to the input terminal through the wires and implemented based on the spin logic device is arranged; and a second gate array in which at least one second majority gate connected to the first gate array through the wires and implemented based on the spin logic device is arranged.

Abstract: Disclosed art a magnetic tunnel junction device, a magnetic memory using the same, and a method for manufacturing the same. The method for manufacturing the magnetic tunnel junction device may include the steps of a lamination step of forming an initial multilayer structure including at least one metallic oxide layer and a metallic layer on a substrate; a heat treatment step of heat-treating the initial multilayer structure; and a device forming step of forming a magnetic tunnel junction device of a final multilayer structure in which at least one metallic oxide layer and the metallic layer are converted to at least one ferromagnetic material layer and the oxide layer by heat treatment.

Abstract: Disclosed are a spin logic device based on spin-charge conversion and a spin logic array using the same. A reconfigurable spin logic array according to an exemplary embodiment of the present invention may include: an input terminal receiving at least three current signals; a plurality of wires transmitting the current signal in connection with the input terminal and including a horizontal wire and a vertical wire which cross each other; a first gate array in which at least one first majority gate connected to the input terminal through the wires and implemented based on the spin logic device is arranged; and a second gate array in which at least one second majority gate connected to the first gate array through the wires and implemented based on the spin logic device is arranged.

Abstract: The present invention relates to a magnetic device including a spin-current pattern generating a spin current perpendicular to a main plane of the spin-current pattern by an in-plane current, and a free magnetic layer disposed in contact with the spin-current pattern and having a perpendicular magnetic anisotropy magnetically switchable by the spin current.

Abstract: The present invention relates to a magnetic device including a spin-current pattern generating a spin current perpendicular to a main plane of the spin-current pattern by an in-plane current, and a free magnetic layer disposed in contact with the spin-current pattern and having a perpendicular magnetic anisotropy magnetically switchable by the spin current.

Abstract: Provided are a multi-layered magnetic thin film stack, a magnetic tunneling junction, and a data storage device. The multi-layered magnetic thin film stack includes a FePd alloy layer including an alloy of iron (Fe) and palladium (Pd); a tunneling barrier layer, which includes MgO and is disposed on the FePd alloy layer; and a Heusler alloy layer disposed between the FePd alloy layer and the tunneling barrier layer, wherein the FePd alloy layer and the Heusler alloy layer constitute a hybrid magnetic layer.

Abstract: Provided are a multi-layered magnetic thin film stack, a magnetic tunneling junction, and a data storage device. The multi-layered magnetic thin film stack includes a FePd alloy layer including an alloy of iron (Fe) and palladium (Pd); a tunneling barrier layer, which includes MgO and is disposed on the FePd alloy layer; and a Heusler alloy layer disposed between the FePd alloy layer and the tunneling barrier layer, wherein the FePd alloy layer and the Heusler alloy layer constitute a hybrid magnetic layer.

Abstract: The present invention relates to hydrogen surface-treated graphene, a formation method thereof, and an electronic device including the same. The graphene according to one exemplary embodiment of the present invention can be useful in preparing hydrogen surface-treated graphene having a band gap using simple methods through indirect hydrogen plasma treatment. Also, the graphene according to one exemplary embodiment of the present invention can be useful in forming two regions having different band gaps through the indirect hydrogen plasma treatment, and thus can be useful in reducing the processing time and the processing cost since the graphene is directly applicable to electronic devices such as transistors, and touch panels.

Abstract: The present invention relates to hydrogen surface-treated graphene, a formation method thereof, and an electronic device including the same. The graphene according to one exemplary embodiment of the present invention can be useful in preparing hydrogen surface-treated graphene having a band gap using simple methods through indirect hydrogen plasma treatment. Also, the graphene according to one exemplary embodiment of the present invention can be useful in forming two regions having different band gaps through the indirect hydrogen plasma treatment, and thus can be useful in reducing the processing time and the processing cost since the graphene is directly applicable to electronic devices such as transistors, and touch panels.

Abstract: Provided is a neural device including at least one nano-wire. The neural device includes a nano-wire formed on a base formed on a first surface of a substrate, and an electrode pad formed on a second surface different from the first surface of the substrate and configured to output an electrical signal gained from a neural fiber through the nano-wire or apply a signal for an electric stimulus to the nano-wire. Therefore, it is possible to prevent the nano-wire from becoming embedded in an encapsulation and maximize a contact between the nano-wire and a nerve.

Abstract: Provided is a neural device including at least one nano-wire. The neural device includes a nano-wire formed on a base formed on a first surface of a substrate, and an electrode pad formed on a second surface different from the first surface of the substrate and configured to output an electrical signal gained from a neural fiber through the nano-wire or apply a signal for an electric stimulus to the nano-wire. Therefore, it is possible to prevent the nano-wire from becoming embedded in an encapsulation and maximize a contact between the nano-wire and a nerve.

Abstract: The present invention relates to a method for fabricating a magnetic pattern and a method for manufacturing a patterned media through fabrication of the magnetic pattern. The method for fabricating the magnetic pattern according to an embodiment of the present invention comprises the steps of (a) coating a pattern forming layer for fabricating a magnetic pattern on a substrate; (b) forming a mask layer that has a designed opening pattern with a nano imprinting process using a stamp that has a nanostructure pattern on the pattern forming layer; and (c) converting an area of the pattern forming layer that corresponds to the predetermined opening pattern into a magnetic area by irradiating a predetermined hydrogen ion beam onto the mask layer.