Patents by Inventor Jongill Hong
Jongill Hong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230403865Abstract: Disclosed are a spin logic device based on spin-charge conversion and a spin logic array using the same. A reconfigurable spin logic array according to an exemplary embodiment of the present invention may include: an input terminal receiving at least three current signals; a plurality of wires transmitting the current signal in connection with the input terminal and including a horizontal wire and a vertical wire which cross each other; a first gate array in which at least one first majority gate connected to the input terminal through the wires and implemented based on the spin logic device is arranged; and a second gate array in which at least one second majority gate connected to the first gate array through the wires and implemented based on the spin logic device is arranged.Type: ApplicationFiled: August 24, 2023Publication date: December 14, 2023Inventors: Jongill HONG, Saeroonter OH
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Patent number: 11785783Abstract: Disclosed are a spin logic device based on spin-charge conversion and a spin logic array using the same. A reconfigurable spin logic array according to an exemplary embodiment of the present invention may include: an input terminal receiving at least three current signals; a plurality of wires transmitting the current signal in connection with the input terminal and including a horizontal wire and a vertical wire which cross each other; a first gate array in which at least one first majority gate connected to the input terminal through the wires and implemented based on the spin logic device is arranged; and a second gate array in which at least one second majority gate connected to the first gate array through the wires and implemented based on the spin logic device is arranged.Type: GrantFiled: May 15, 2020Date of Patent: October 10, 2023Assignees: INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY, INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY ERICA CAMPUSInventors: Jongill Hong, Saeroonter Oh
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Publication number: 20220131069Abstract: Disclosed art a magnetic tunnel junction device, a magnetic memory using the same, and a method for manufacturing the same. The method for manufacturing the magnetic tunnel junction device may include the steps of a lamination step of forming an initial multilayer structure including at least one metallic oxide layer and a metallic layer on a substrate; a heat treatment step of heat-treating the initial multilayer structure; and a device forming step of forming a magnetic tunnel junction device of a final multilayer structure in which at least one metallic oxide layer and the metallic layer are converted to at least one ferromagnetic material layer and the oxide layer by heat treatment.Type: ApplicationFiled: October 25, 2021Publication date: April 28, 2022Inventor: Jongill HONG
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Publication number: 20200365652Abstract: Disclosed are a spin logic device based on spin-charge conversion and a spin logic array using the same. A reconfigurable spin logic array according to an exemplary embodiment of the present invention may include: an input terminal receiving at least three current signals; a plurality of wires transmitting the current signal in connection with the input terminal and including a horizontal wire and a vertical wire which cross each other; a first gate array in which at least one first majority gate connected to the input terminal through the wires and implemented based on the spin logic device is arranged; and a second gate array in which at least one second majority gate connected to the first gate array through the wires and implemented based on the spin logic device is arranged.Type: ApplicationFiled: May 15, 2020Publication date: November 19, 2020Inventors: Jongill HONG, Saeroonter OH
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Patent number: 10522748Abstract: The present invention relates to a magnetic device including a spin-current pattern generating a spin current perpendicular to a main plane of the spin-current pattern by an in-plane current, and a free magnetic layer disposed in contact with the spin-current pattern and having a perpendicular magnetic anisotropy magnetically switchable by the spin current.Type: GrantFiled: August 29, 2018Date of Patent: December 31, 2019Assignee: UNIVERSITY-INDUSTRY FOUNDATION (UIF), YONSEI UNIVERSITYInventor: Jongill Hong
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Publication number: 20190103553Abstract: The present invention relates to a magnetic device including a spin-current pattern generating a spin current perpendicular to a main plane of the spin-current pattern by an in-plane current, and a free magnetic layer disposed in contact with the spin-current pattern and having a perpendicular magnetic anisotropy magnetically switchable by the spin current.Type: ApplicationFiled: August 29, 2018Publication date: April 4, 2019Inventor: Jongill Hong
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Patent number: 10164172Abstract: Provided are a multi-layered magnetic thin film stack, a magnetic tunneling junction, and a data storage device. The multi-layered magnetic thin film stack includes a FePd alloy layer including an alloy of iron (Fe) and palladium (Pd); a tunneling barrier layer, which includes MgO and is disposed on the FePd alloy layer; and a Heusler alloy layer disposed between the FePd alloy layer and the tunneling barrier layer, wherein the FePd alloy layer and the Heusler alloy layer constitute a hybrid magnetic layer.Type: GrantFiled: April 12, 2017Date of Patent: December 25, 2018Assignees: SK HYNIX INC., INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITYInventors: Jongill Hong, Taejin Bae, Sung Joon Yoon
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Publication number: 20170294574Abstract: Provided are a multi-layered magnetic thin film stack, a magnetic tunneling junction, and a data storage device. The multi-layered magnetic thin film stack includes a FePd alloy layer including an alloy of iron (Fe) and palladium (Pd); a tunneling barrier layer, which includes MgO and is disposed on the FePd alloy layer; and a Heusler alloy layer disposed between the FePd alloy layer and the tunneling barrier layer, wherein the FePd alloy layer and the Heusler alloy layer constitute a hybrid magnetic layer.Type: ApplicationFiled: April 12, 2017Publication date: October 12, 2017Inventors: Jongill HONG, Taejin BAE, Sung Joon YOON
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Patent number: 9315389Abstract: The present invention relates to hydrogen surface-treated graphene, a formation method thereof, and an electronic device including the same. The graphene according to one exemplary embodiment of the present invention can be useful in preparing hydrogen surface-treated graphene having a band gap using simple methods through indirect hydrogen plasma treatment. Also, the graphene according to one exemplary embodiment of the present invention can be useful in forming two regions having different band gaps through the indirect hydrogen plasma treatment, and thus can be useful in reducing the processing time and the processing cost since the graphene is directly applicable to electronic devices such as transistors, and touch panels.Type: GrantFiled: October 17, 2014Date of Patent: April 19, 2016Assignee: University-Industry Foundation, Yonsei UniversityInventors: Jongill Hong, Jangyup Son
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Publication number: 20150110706Abstract: The present invention relates to hydrogen surface-treated graphene, a formation method thereof, and an electronic device including the same. The graphene according to one exemplary embodiment of the present invention can be useful in preparing hydrogen surface-treated graphene having a band gap using simple methods through indirect hydrogen plasma treatment. Also, the graphene according to one exemplary embodiment of the present invention can be useful in forming two regions having different band gaps through the indirect hydrogen plasma treatment, and thus can be useful in reducing the processing time and the processing cost since the graphene is directly applicable to electronic devices such as transistors, and touch panels.Type: ApplicationFiled: October 17, 2014Publication date: April 23, 2015Inventors: Jongill Hong, Jangyup Son
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Patent number: 8504148Abstract: Provided is a neural device including at least one nano-wire. The neural device includes a nano-wire formed on a base formed on a first surface of a substrate, and an electrode pad formed on a second surface different from the first surface of the substrate and configured to output an electrical signal gained from a neural fiber through the nano-wire or apply a signal for an electric stimulus to the nano-wire. Therefore, it is possible to prevent the nano-wire from becoming embedded in an encapsulation and maximize a contact between the nano-wire and a nerve.Type: GrantFiled: October 8, 2010Date of Patent: August 6, 2013Assignees: Industry-Academic Cooperation Foundation, Yonsei University, I3SYSTEM, Inc.Inventors: Donghyun Kim, Jongill Hong, Gunhee Han, Taewook Kim, Heonjin Choi, Seunghan Park, Seongyeol Pyo, Sooho Bae, Han Chung
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Publication number: 20120130459Abstract: Provided is a neural device including at least one nano-wire. The neural device includes a nano-wire formed on a base formed on a first surface of a substrate, and an electrode pad formed on a second surface different from the first surface of the substrate and configured to output an electrical signal gained from a neural fiber through the nano-wire or apply a signal for an electric stimulus to the nano-wire. Therefore, it is possible to prevent the nano-wire from becoming embedded in an encapsulation and maximize a contact between the nano-wire and a nerve.Type: ApplicationFiled: October 8, 2010Publication date: May 24, 2012Applicants: I3SYSTEM, Inc., Industry-Academic Cooperation Foundation, Yonsei UniversityInventors: Donghyun Kim, Jongill Hong, Gunhee Han, Taewook Kim, Heonjin Choi, Seunghan Park, Seongyeol Pyo, Sooho Bae, Han Chung
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Publication number: 20100270710Abstract: The present invention relates to a method for fabricating a magnetic pattern and a method for manufacturing a patterned media through fabrication of the magnetic pattern. The method for fabricating the magnetic pattern according to an embodiment of the present invention comprises the steps of (a) coating a pattern forming layer for fabricating a magnetic pattern on a substrate; (b) forming a mask layer that has a designed opening pattern with a nano imprinting process using a stamp that has a nanostructure pattern on the pattern forming layer; and (c) converting an area of the pattern forming layer that corresponds to the predetermined opening pattern into a magnetic area by irradiating a predetermined hydrogen ion beam onto the mask layer.Type: ApplicationFiled: December 22, 2008Publication date: October 28, 2010Applicant: Industry-Academic Cooperation Foundation Yonsei UniversityInventors: Shinill Kang, Jongill Hong
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Publication number: 20080231999Abstract: A tunneling magnetoresistive device and a magnetic head including the tunneling magnetoresistive device are provided. The tunneling magnetoresistive device includes a pinned layer and a free layer formed on either side of a tunneling barrier layer, wherein the tunneling barrier layer includes Te—O.Type: ApplicationFiled: December 7, 2007Publication date: September 25, 2008Applicant: Samsung Electronics Co., Ltd.Inventors: Eun-sik Kim, Kook-hyun Sunwoo, Jongill Hong, In-jun Hwang, Hyoung-joon Choi
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Patent number: 7087324Abstract: A magnetoresistive spin-valve sensor is constructed to include a magnetic layer, a specular layer made of a metal oxide, a back layer made of Au, Cu, AuCu, AgCu, AuAgCu or an alloy thereof and interposed between the magnetic layer and the specular layer, and a metal layer disposed adjacent to the specular layer, opposite to the back layer, and made of a metal which improves GMR performance of the magnetoresistive spin-valve sensor.Type: GrantFiled: September 16, 2003Date of Patent: August 8, 2006Assignee: Fujitsu LimitedInventors: Jongill Hong, Hitoshi Kanai, Junichi Kane, Kenji Noma
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Publication number: 20050276996Abstract: A magnetoresistive spin-valve sensor is constructed to include a magnetic layer, a specular layer made of a metal oxide, a back layer made of Au, Cu, AuCu, AgCu, AuAgCu or an alloy thereof and interposed between the magnetic layer and the specular layer, and a metal layer disposed adjacent to the specular layer, opposite to the back layer, and made of a metal which improves GMR performance of the magnetoresistive spin-valve sensor.Type: ApplicationFiled: September 16, 2003Publication date: December 15, 2005Inventors: Jongill Hong, Hitoshi Kanai, Junichi Kane, Kenji Noma
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Publication number: 20050052793Abstract: A magnetoresistive spin-valve sensor includes a first layer made of a magnetic material, a second layer made of a magnetic or nonmagnetic material and disposed on the first layer, and a third layer made of a magnetic material and disposed on the second layer, where the first, second and third layers form a free layer having a multi-layer structure.Type: ApplicationFiled: August 20, 2004Publication date: March 10, 2005Inventors: Jongill Hong, Hitoshi Kanai
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Publication number: 20020054463Abstract: A spin-valve magneto-resistive element is provided with a free magnetic layer having a first surface and a second surface opposite to the first surface, a first stacked structure including a first nonmagnetic metal layer, a first pinned magnetic layer and a first antiferromagnetic layer which are successively stacked on the first surface of the free magnetic layer, and a second stacked structure including a second nonmagnetic metal layer, a second pinned magnetic layer and a second antiferromagnetic layer which are successively stacked on the second surface of the free magnetic layer. A direction of an exchange coupled field between the first pinned magnetic layer and the free magnetic layer and a direction of an exchange coupled field between the second pinned magnetic layer and the free magnetic layer are antiparallel.Type: ApplicationFiled: March 15, 2001Publication date: May 9, 2002Applicant: FUJITSU LIMITEDInventors: Naoki Mukoyama, Kenji Noma, Jongill Hong, Junichi Kane