Abstract: A semiconductor memory device includes a substrate including a cell region, and a peri-region defined around the cell region, a cell region isolation film that is disposed in the substrate and isolates the cell region and the peri-region, a first cell gate structure disposed in the cell region and the cell region isolation film, and including a first cell gate electrode extending in a first direction, and a first cell gate plug disposed on the first cell gate electrode and connected to the first cell gate electrode.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate which includes a cell region and a core region, a boundary element separation film which is placed inside the substrate, and separates the cell region and the core region, and a bit line which is placed on the cell region and the boundary element separation film and extends along a first direction, in which the boundary element separation film includes a first region and a second region, a height of an upper side of the first region of the boundary element separation film is different from a height of an upper side of the second region of the boundary element separation film, on a basis of a bottom side of the boundary element separation film, and the bit line is placed over the first region and the second region of the boundary element separation film.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate which includes a cell region and a core region, a boundary element separation film which is placed inside the substrate, and separates the cell region and the core region, and a bit line which is placed on the cell region and the boundary element separation film and extends along a first direction, in which the boundary element separation film includes a first region and a second region, a height of an upper side of the first region of the boundary element separation film is different from a height of an upper side of the second region of the boundary element separation film, on a basis of a bottom side of the boundary element separation film, and the bit line is placed over the first region and the second region of the boundary element separation film.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate which includes a cell region and a core region, a boundary element separation film which is placed inside the substrate, and separates the cell region and the core region, and a bit line which is placed on the cell region and the boundary element separation film and extends along a first direction, in which the boundary element separation film includes a first region and a second region, a height of an upper side of the first region of the boundary element separation film is different from a height of an upper side of the second region of the boundary element separation film, on a basis of a bottom side of the boundary element separation film, and the bit line is placed over the first region and the second region of the boundary element separation film.

Abstract: A variable valve lift (VVL) system in an engine includes an oil control valve and a lock pin configured to be hydraulically actuated against an elastic force of a return spring under a control of the OCV. An orifice through which oil passes is formed to supply hydraulic pressure to the OCV and the lock pin. An oil pressure sensor measures the hydraulic pressure to be supplied to the OCV and the lock pin. A controller is configured to receive a signal from the oil pressure sensor and to control the OCV according to the received signal.

Abstract: A variable valve lift (VVL) system in an engine includes an oil control valve and a lock pin configured to be hydraulically actuated against an elastic force of a return spring under a control of the OCV. An orifice through which oil passes is formed to supply hydraulic pressure to the OCV and the lock pin. An oil pressure sensor measures the hydraulic pressure to be supplied to the OCV and the lock pin. A controller is configured to receive a signal from the oil pressure sensor and to control the OCV according to the received signal.