Abstract: The present invention relates to a novel method for preparing a water-insoluble metal hydroxide, and a use thereof. The water-insoluble metal hydroxide of the present invention is conveniently and efficiently prepared s through the high-temperature heat treatment step two times and the washing step, and thus contains a small amount of an alkali metal and has a high crystallinity and a phase purity. The water-insoluble metal hydroxide of the present invention or metal oxide therefrom exhibits an absorption wavelength at a low wavelength range (for example, 490 nm or less) and a light emitting wavelength at a high wavelength range (for example, from 500 nm or more to less than 1,100 nm).

Abstract: The present invention relates to a novel method for preparing a water-insoluble metal hydroxide, and a use thereof. The water-insoluble metal hydroxide of the present invention is conveniently and efficiently prepared s through the high-temperature heat treatment step two times and the washing step, and thus contains a small amount of an alkali metal and has a high crystallinity and a phase purity. The water-insoluble metal hydroxide of the present invention or metal oxide therefrom exhibits an absorption wavelength at a low wavelength range (for example, 490 nm or less) and a light emitting wavelength at a high wavelength range (for example, from 500 nm or more to less than 1,100 nm).

Abstract: There are provided a coating composition having excellent visible light transmittance and photoluminescence properties, and a wavelength converting thin film prepared by using the same. The coating composition according to the present invention includes a solvent, polysilazane, and a wavelength converting agent, and has visible light transmittance of 50% or more with respect to an aqueous solution. According to the present invention, a wavelength converting thin film having excellent visible light transmittance and photoluminescence properties can be prepared.

Abstract: Provided is a copper indium gallium selenium (CIGS)- or copper zinc tin sulfur (CZTS)-based solar cell including a back electrode layer and a light-absorbing layer, wherein the light-absorbing layer has a composition of CuxInyGa1-y(SzSe1-z)2 (wherein 0.85?x<1, 0<y<1, 0<z<1, and each of x, y and z represents a real number) or Cu(2-p)Zn(2-q)Snq(SrSe(1-r))4 (wherein 1.4?p<2, 0<q<2, 0<r<2, and each of p, q and r represents a real number). The CIGS- or CZTS-based thin-film solar cell causes no interlayer delamination and has improved durability and photoelectric conversion efficiency. Also provided is a method for fabricating a CIGS- or CZTS-based thin-film solar cell by which conversion of molybdenum back electrode layer to molybdenum diselenide is controlled.

Abstract: A method of fabricating CIGS nanorod or nanowire according to one exemplary embodiment of the present disclosure comprises a deposition preparation step of placing a raw material including copper, indium, gallium and selenium and a substrate, and a deposition step of growing CIGS nanorod or nanowire on the substrate by maintaining an internal temperature of a reactor, in which carrier gas flows at a constant flow rate, at a temperature in the range of 850 to 1000° C. According to the method, Cu(In,Ga)Se2 nanorod or nanowire as a direct transition type semiconductor material having substantially uniform composition, high crystallinity and high light absorption ratio can be fabricated.

Abstract: Disclosed is a method for producing a copper indium selenium (CIS) or copper indium gallium selenium (CIGS) thin-film light-absorbing layer. The method includes forming a coating layer of CIGS slurry, removing a solvent, a dispersant and a binder from the coating layer to form a powder coat layer, pressing the powder coat layer to improve its particle packing density, and heating the powder layer to form a dense thin film. The method uses a powder process as a non-vacuum process to produce a CIS or CIGS thin film in high yield at low cost. Further disclosed is a method for manufacturing a thin-film solar cell including the production method.

Abstract: Provided is a copper indium gallium selenium (CIGS)- or copper zinc tin sulfur (CZTS)-based solar cell including a back electrode layer and a light-absorbing layer, wherein the light-absorbing layer has a composition of CuxInyGa1-y(SzSe1-z)2 (wherein 0.85?x<1, 0<y<1, 0<z<1, and each of x, y and z represents a real number) or Cu(2-p)Zn(2-q)Snq(SrSe(1-r))4 (wherein 1.4?p<2, 0<q<2, 0<r<2, and each of p, q and r represents a real number). The CIGS- or CZTS-based thin-film solar cell causes no interlayer delamination and has improved durability and photoelectric conversion efficiency. Also provided is a method for fabricating a CIGS- or CZTS-based thin-film solar cell by which conversion of molybdenum back electrode layer to molybdenum diselenide is controlled.

Abstract: It is disclosed that a photo-electrode of a dye-sensitized solar cell comprising faceted anatase-type titania nanoparticles which adequate for fabricating a photo-electrode of a dye-sensitized solar cell which is efficient and longlasting and a fabrication method thereof. The titania nanoparticles can provide high photoelectric conversion efficiency of the solar cell with help of fast electron mobility due to its high crystallinity and can reduce process time required for adsorbing the dye molecules on the surface of the titania nanoparticles. By modifying surface characteristics of the titania nanoparticles, it is allowed for dye molecules to be easily adsorbed on the surface of the titania nanoparticles and the life span of the dye molecules adsorbed on it is expanded with help of reduced photo-degradation rate of them at service conditions.

Abstract: Disclosed is a method for producing a copper indium selenium (CIS) or copper indium gallium selenium (CIGS) thin-film light-absorbing layer. The method includes forming a coating layer of CIGS slurry, removing a solvent, a dispersant and a binder from the coating layer to form a powder coat layer, pressing the powder coat layer to improve its particle packing density, and heating the powder layer to form a dense thin film. The method uses a powder process as a non-vacuum process to produce a CIS or CIGS thin film in high yield at low cost. Further disclosed is a method for manufacturing a thin-film solar cell including the production method.

Abstract: The present invention relates to a method of fabricating ultra-fine grain cermet alloys with a homogenous solid solution grain structure. More particularly, the invention relates to a method of fabricating an ultra-fine TiC-base cermet alloy with a homogenous solid solution structure which does not comprise a core-rim structure in the carbide grain. The object of the present invention is to provide a method of fabricating a TiC-base cermet alloy without the core-rim structure. The above objects of the present invention could be achieved by employing a conventional sintering process (vacuum sintering) of (Ti,TM)C carbide obtained from a mechano-chemical synthesis (high energy ball-milling) from milling the powders of Ti, TM, Ni and Co metals.

Abstract: The present invention relates to a method of controlling the microstructures of Cu—Cr-based contact materials for vacuum interrupters, in which a heat-resistant element is added to the Cu—Cr-based contact materials to obtain an excellent current interrupting characteristic and voltage withstanding capability, and contact materials manufactured thereby. The method of controlling the microstructures of Cu—Cr-based contact materials includes the steps of mixing a copper powder used as a matrix material, a chromium powder improving an electrical characteristic of the contact material and a heat-resistant element powder making the chromium particles in the matrix material fine to thereby obtain mixed powder, and subjecting the mixed powder to one treatment selected from sintering, infiltration and hot pressing to thereby obtain a sintered product.

Abstract: The present invention relates to a method of controlling the microstructures of Cu—Cr-based contact materials for vacuum interrupters, in which a heat-resistant element is added to the Cu—Cr-based contact materials to obtain an excellent current interrupting characteristic and voltage withstanding capability, and contact materials manufactured thereby. The method of controlling the microstructures of Cu—Cr-based contact materials includes the steps of mixing a copper powder used as a matrix material, a chromium powder improving an electrical characteristic of the contact material and a heat-resistant element powder making the chromium particles in the matrix material fine to thereby obtain mixed powder, and subjecting the mixed powder to one treatment selected from sintering, infiltration and hot pressing to thereby obtain a sintered product.

Abstract: A method for fabricating a hermetically sealed tungsten-copper package container for a microwave device is provided with the steps of forming an injection feedstock by mixing a polymer binder with a tungsten powder having a particle diameter of 2 to 5 .mu.m and a purity 99.9 of weight percent, forming a three-dimensional part by applying a powder injection molding to the feedstock, obtaining a tungsten skeleton structure by eliminating the binder from the injection molded part, and carrying out a copper infiltration to a copper plate placed on the tungsten skeleton structure for two hours under a hydrogen atmosphere at a temperature of 1250.degree. C. The method incorporates an improved heat sink characteristic, a thermal expansion coefficient similar to that of GaAs, and a capability of applying thereto a strip wire connection, without an extra machining process.

Abstract: A tungsten skeleton structure fabrication method employed in an application of a copper infiltration and tungsten-copper composite fabrication method includes the steps of forming a source powder by coating the tungsten powder surface having a purity of 99.9 weight percent and 2.about.5 .mu.m in size, with nickel by less than 0.06 weight percent (600 ppm), forming an injection molded admixture by admixing a source powder and a polymer binder, carrying out a powder injection molded with regard to the admixture, and obtaining a tungsten skeleton structure by removing the polymer binder from the resultant injection molded body. The method prevents the molded body from being unevenly shrunken during a liquid phase sintering for thereby decreasing its production cost.

Abstract: The present invention provides a process for preparing titanium nitride sintered masses having no residual pores and consisting of TiN solid solution particles and Ni solid solution matrix, in which a granulated powder of the following composition:TiN-pMo.sub.2 C-qC-rNi-sMeCwherein:p is 5 to 20 wt %;q is 0 to 1.5 wt %;r is 15 to 30 wt %;s is 0 to 5 wt %;MeC is one or more carbides selected from VC, WC, TaC and NbC;with the proviso that q and s are not 0 wt % simultaneously;is compacted and sintered. The process according to the present invention can provide sintered TiN cermets of high density and a small grain size.