Patents by Inventor Jong-sik Won

Jong-sik Won has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240301267
    Abstract: The present application can provide a curable composition capable of securing processability due to excellent blending properties with a filler while having little viscosity change with time and for forming a cured product having excellent electrical insulation performance, and can provide a device comprising, between an exothermic element and a cooling region, a cured product of a tow-component curable composition including the curable composition in thermal contact with both.
    Type: Application
    Filed: January 26, 2022
    Publication date: September 12, 2024
    Applicants: LG Chem, Ltd., LG Chem, Ltd.
    Inventors: Sol Yi Lee, Je Sik Jung, Hyoung Sook Park, Jin Hyeok Won, Hye Jin Kim, Sung Bum Hong, Jong Hun Choi, Sang Hyuk Seo, Jae Min Jung
  • Publication number: 20190145489
    Abstract: A vibration canceling motor assembly and an ultrasound probe are provided, including a driving force transmission member rotating in a state of being fixed to a shaft and transmitting a driving force to outside, a mass body arranged on at least a portion of an outer circumferential surface of the driving force transmission member, and an adhesion member configured to couple the mass body to the driving force transmission member. Accordingly, a vibration is efficiently attenuated.
    Type: Application
    Filed: November 13, 2018
    Publication date: May 16, 2019
    Inventors: Jong Sik WON, Gi Han KWON, Jae Won YOO, Jae Wook LEE, Jeong CHO
  • Patent number: 6329294
    Abstract: A photoresist mask removing method for effectively removing polymers produced as by-products during etching of a metal layer includes processing the polymers prior to removal to facilitate removal thereof. To remove the photoresist mask remaining on a semiconductor substrate after the metal layer is dry-etched in an etching chamber, the semiconductor substrate is preferably conveyed from the etching chamber to an ashing chamber without vacuum break. The semiconductor substrate is pretreated by supplying N2 gas into the ashing chamber under the vacuum state without applying RF power to the ashing chamber to blow the N2 gas on the semiconductor substrate heated up to a predetermined temperature. This pretreatment modifies the polymer by-products to facilitate removal thereof during ashing. The photoresist mask and the polymer by-products are removed by ashing in the ashing chamber.
    Type: Grant
    Filed: December 30, 1999
    Date of Patent: December 11, 2001
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Tae-ryong Kim, Jae-pil Kim, Jong-sik Won, Ka-soon Yim