Abstract: According to the present disclosure, pure metal hydrate without chemicals is prepared and is used as a mineral fertilizer to germinate and grow seeds to improve the growth rate of plant sprouts and provide excellent human affinity and absorption rate and abundant amino acids, mineral nutrients, and antioxidants in grown plant sprouts so that it has the advantage of being able to be used as a vegetable raw material for cosmetics, health foods, hangover relievers, etc.

Abstract: Provided is an apparatus for manufacturing a powder alloy used as an anode active material of a secondary battery. The apparatus includes a nozzle unit for melting and spraying an alloy, a cooling unit for cooling down the alloy sprayed from the nozzle unit, a grinding unit for grinding the alloy cooled by the cooling unit, and a first chamber accommodating the nozzle unit, the cooling unit, and the grinding unit, and maintained to be a vacuum state.

Abstract: A negative active material for a secondary battery that provides high capacity, high efficiency charging and discharging characteristics includes: a silicon single phase; and a silicon-metal alloy phase by which the silicon single phase is bounded, wherein the negative active material comprises 5 to 30 wt % of nickel, 5 to 30 wt % of titanium, and 40 to 90 wt % of silicon, the negative active material has a first peak of the silicon-metal alloy phase in an X-ray diffraction analysis spectrum, the silicon single phase is finely distributed in the silicon-metal single phase by mechanical alloying, and the first peak resulting from the (501) surface of the silicon-metal alloy phase has a greater value than the first peak resulting from the (501) surface of the silicon-metal alloy phase that is not subjected to the mechanical alloying, by 0.6° to 0.9°.

Abstract: A cooling device according to an exemplary embodiment of the present invention includes: a chamber including at least one flexible surface; a piezoelectric element formed in the at least one flexible surface and generating a volume change in the chamber by bending the at least one flexible surface in a first direction or a second direction to generates a first directional air flow or a second directional air flow; an opening formed in the chamber and becoming a channel of the first direction air flow or the second directional air flow; and at least one connection unit connected to the outer side of the chamber and the outer side of a heat source that is provided at a distance from the chamber and connecting the chamber and the heat source.

Abstract: An anode active material for a secondary battery includes an amount of a first element group in a range of about 0 at % (atomic percent) to about 30 at %, an amount of a second element group in a range of about 0 at % to about 20 at %, a balance of silicon and other unavoidable impurities. The first element group may include copper (Cu), iron (Fe), or a mixture thereof, and the second element group may include titanium (Ti), nickel (Ni), manganese (Mn), aluminum (Al), chromium (Cr), cobalt (Co), zinc (Zn), boron (B), beryllium (Be), molybdenum (Mo), tantalum (Ta), sodium (Na), strontium (Sr), phosphorous (P) or mixtures thereof.

Abstract: An anode active material for a secondary battery is provided. The anode active material provides high-capacity, high-efficiency, charging and discharging characteristics. The anode active material for a secondary battery may include a silicon single phase and a silicon-metal alloy phase distributed around the silicon single phase. The silicon-metal alloy phase may include copper, iron, titanium and nickel.

Abstract: An anode active material for a lithium secondary battery having high-capacity and high-efficient charging/discharging characteristics. The anode active material includes silicon single phases, and silicon-metal alloy phases distributed around the silicon single phases. The silicon single phases have a fine structure in which crystalline particles obtained through rapid-cooling solidification are thermally treated to be grown to crystal grains.

Abstract: An anode active material for a lithium secondary battery having high-capacity and high-efficient charge/discharge characteristics. The anode active material includes silicon single phases; and silicon-metal alloy phases surrounding the silicon single phases. A dopant is distributed in the anode active material, and the silicon single phases are formed through rapid-cooling solidification, and the silicon single phases have a fine microstructure due to the dopant.

Abstract: An anode active material for a lithium secondary battery having a high capacity and a high efficiency of charge discharge characteristics. The anode active material includes a silicon mono-phase and an alloy phase formed of silicon with a metal element at least one selected from the group consisting of Ti, Ni, Cu, Fe, Mn, Al, Cr, Co, and Zn. The anode active material is a powder in which the silicon mono-phase is uniformly distributed in a matrix of the alloy phase, has particle size distribution defined as D0.1 and D0.9, and the value of D0.1-D0.9 is in a range from about 3 ?m to about 15 ?m.

Abstract: A gold-silver based wire for a semiconductor package has high humidity reliability as well as high dry reliability. The wire includes a first additive ingredient that contains 5˜15 wt % of at least one kind of elements from among first group elements composed of palladium (Pd) and platinum (Pt) added to a gold (Au)-silver (Ag) based alloy that contains 10˜40 wt % of Ag added to Au.

Abstract: The present invention describes methods of contaminant removal and remediation utilizing hydroexcavation in Hydroexcavation of the soil combination with solvents and/or beneficial microbes, for primary scrubbing and high pressure mixing of the soil. Various embodiments of the present invention are useful for cleaning soil with contaminants, including but not limited to hydrocarbon based materials. The solvent used in conjunction with various embodiments of the present invention comprise a degreasing composition, which may comprise sodium silicate.

Abstract: Provided is a shoe with a cushion and ventilation device. The cushion and ventilation device includes an air pump having an air discharge tube provided at its one side, and an air tube having a connection pipe connecting to the air discharge tube of the air pump, and an air chamber, wherein the air pump is provided by placing an upper sheet having a cavity on a lower sheet having an intake hole, and thermally bonding circumference surfaces of the upper and lower sheets using microwave, and wherein the upper and lower sheets further comprise a sponge having contraction and restoring forces therein.

Abstract: An Ag-based alloy wire for a semiconductor package is highly reliable and can be fabricated with low costs. The Ag-based alloy wire includes 0.05˜5 wt % of at least one kind of a first additive ingredient selected from the group consisting of platinum (Pt), palladium (Pd), rhodium (Rh), osmium (Os), gold (Au), and nickel (Ni), and Ag as a remainder.

Abstract: A semiconductor package using Ag or Ag alloy wire which can maintain superior reliability against a noble metal and lower its manufacturing cost is provided. The semiconductor package comprises a semiconductor substrate. A semiconductor chip is attached to the package substrate and has one or more pads which comprise a noble metal. And one or more wires are bonded so as to electrically connect the one or more pads and the package substrate and comprise Ag or Ag alloy.

Abstract: A gold-silver based wire for a semiconductor package has high humidity reliability as well as high dry reliability. The wire includes a first additive ingredient that contains 5˜15 wt % of at least one kind of elements from among first group elements composed of palladium (Pd) and platinum (Pt) added to a gold (Au)-silver (Ag) based alloy that contains 10˜40 wt % of Ag added to Au.

Abstract: Disclosed is footwear including a ventilation and shock-absorbing device having an air pump and a check valve for passing air supplied by the air pump. The footwear includes an air chamber provided at a front of the check valve for storing the air supplied through an inlet passage connected to the check valve, and an air tube having one or more discharge holes for discharging the air stored in the air chamber into the footwear.

Abstract: A gold (Au) alloy bonding wire for a semiconductor device is provided. The Au alloy bonding wire is manufactured by adding at least one of polonium (Po), promethium (Pm), thulium (Tm), and boron (B) to high-purity gold of 99.999% or more in an amount of 3–30 parts per million (ppm) by weight and at least one of magnesium (Mg), sodium (Na), vanadium (V), molybdenum (Mo), and technetium (Tc) in an amount of 3–30 ppm by weight to the high-purity gold. In the Au alloy bonding wire, high-temperature reliability after ball bonding is not reduced and damage near a ball neck in forming an ultra low loop of the Au alloy bonding wire can be prevented.

Abstract: A gold (Au) alloy bonding wire for a semiconductor device is provided. The Au alloy bonding wire is manufactured by adding at least one of polonium (Po), promethium (Pm), thulium (Tm), and boron (B) to high-purity gold of 99.999% or more in an amount of 3-30 parts per million (ppm) by weight and at least one of magnesium (Mg), sodium (Na), vanadium (V), molybdenum (Mo), and technetium (Tc) in an amount of 3-30 ppm by weight to the high-purity gold. In the Au alloy bonding wire, high-temperature reliability after ball bonding is not reduced and damage near a ball neck in forming an ultra low loop of the Au alloy bonding wire can be prevented.

Abstract: A gold-silver alloy bonding wire for a semiconductor device is provided. The bonding wire contains: a Au-Ag alloy including 5-40% Ag by weight in Au having a purity of 99.999% or greater; at least one element of a first group consisting of Pd, Rh, Pt, and Ir in an amount of about 50-10,000 ppm by weight; at least one element of a second group consisting of B, Be, and Ca in an amount of about 1-50 ppm by weight; at least one element of a third group consisting of P, Sb, and Bi in an amount of about 1-50 ppm by weight; and at least one element of a fourth group consisting of Mg, TI, Zn, and Sn in an amount of about 5-50 ppm by weight. The bonding wire is highly reliable with a strong tensile strength at room temperature and high temperature and favourable bondability. When the bonding wire is looped, no rupture occurs in a ball neck region. Also, no chip cracking occurs since the ball is soft.

Abstract: A gold-silver alloy bonding wire for a semiconductor device is provided. The bonding wire contains: a Au-Ag alloy including 5-40% Ag by weight in Au having a purity of 99.999% or greater; at least one element of a first group consisting of Pd, Rh, Pt, and Ir in an amount of about 50-10,000 ppm by weight; at least one element of a second group consisting of B, Be, and Ca in an amount of about 1-50 ppm by weight; at least one element of a third group consisting of P, Sb, and Bi in an amount-of about 1-50 ppm by weight; and at least one element of a fourth group consisting of Mg, TI, Zn, and Sn in an amount of about 5-50 ppm by weight. The bonding wire is highly reliable with a strong tensile strength at room temperature and high temperature and favourable bondability. When the bonding wire is looped, no rupture occurs in a ball neck region. Also, no chip cracking occurs since the ball is soft.