Abstract: A semiconductor memory device includes a first substrate including a first region and a second region, a stacked structure only on the first region of the first substrate among the first region and the second region of the first substrate, the stacked structure including word lines, an interlayer insulating film covering the stacked structure, a dummy conductive structure inside the interlayer insulating film, the dummy conductive structure extending through the stacked structure to contact the first substrate, and a plate contact plug inside the interlayer insulating film, the plate contact plug being connected to the second region of the first substrate, and a height of an upper surface of the dummy conductive structure being greater than a height of an upper surface of the plate contact plug relative to an upper surface of the first substrate.

Abstract: A pixel may include: an emission area and a non-emission area; a first bank in the non-emission area, the first bank including an opening corresponding to the emission area; a first electrode, a second electrode, and an intermediate electrode that are spaced from each other; light emitting elements in the emission area, each of the light emitting elements including one end portion electrically connected to one of the first electrode, the second electrode, or the intermediate electrode and an other end portion electrically connected to another one of the first electrode, the second electrode, or the intermediate electrode; and a sub-bank located in the opening of the first bank, the sub-bank being spaced from the first bank. The intermediate electrode may be around at least a portion of the sub-bank.

Abstract: A storage device includes a printed circuit board (PCB) with attached semiconductor chips, each including a memory, and with at least one wire coupling the semiconductor chips. The storage device includes a case including a first case surrounding a top portion of the printed circuit board and a second case surrounding a bottom portion of the printed circuit board. A sidewall of the first case and a protrusion of the second case form a concavo-convex structure. The sidewall of the first case and the protrusion of the second case cover a side of the printed circuit board.

Abstract: One aspect of the present disclosure is a pharmaceutical composition which includes (R)—N-[1-(3,5-difluoro-4-methansulfonylamino-phenyl)-ethyl]-3-(2-propyl-6-trifluoromethyl-pyridin-3-yl)-acrylamide as a first component and a cellulosic polymer as a second component, wherein the composition of one aspect of the present disclosure has a formulation characteristic in which crystal formation is delayed for a long time.

Abstract: Disclosed are a method and apparatus for reusing wastewater. The method for reusing wastewater disclosed herein includes: generating a mixed wastewater by mixing multiple types of wastewater (S20); performing a first purification by passing the mixed wastewater through a flocculation-sedimentation unit (S40); performing a second purification by passing an effluent of the flocculation-sedimentation unit through a membrane bioreactor (MBR) (S60); performing a third purification by passing an effluent of the MBR through a reverse-osmosis membrane unit (S80); and reusing an effluent of the reverse-osmosis membrane unit as cooling water or industrial water (S100).

Abstract: The present invention relates to an apparatus and method for encoding and decoding an image by skip encoding. The image-encoding method by skip encoding, which performs intra-prediction, comprises: performing a filtering operation on the signal which is reconstructed prior to an encoding object signal in an encoding object image; using the filtered reconstructed signal to generate a prediction signal for the encoding object signal; setting the generated prediction signal as a reconstruction signal for the encoding object signal; and not encoding the residual signal which can be generated on the basis of the difference between the encoding object signal and the prediction signal, thereby performing skip encoding on the encoding object signal.

Abstract: Provided is an apparatus for manufacturing a powder alloy used as an anode active material of a secondary battery. The apparatus includes a nozzle unit for melting and spraying an alloy, a cooling unit for cooling down the alloy sprayed from the nozzle unit, a grinding unit for grinding the alloy cooled by the cooling unit, and a first chamber accommodating the nozzle unit, the cooling unit, and the grinding unit, and maintained to be a vacuum state.

Abstract: A negative active material for a secondary battery that provides high capacity, high efficiency charging and discharging characteristics includes: a silicon single phase; and a silicon-metal alloy phase by which the silicon single phase is bounded, wherein the negative active material comprises 5 to 30 wt % of nickel, 5 to 30 wt % of titanium, and 40 to 90 wt % of silicon, the negative active material has a first peak of the silicon-metal alloy phase in an X-ray diffraction analysis spectrum, the silicon single phase is finely distributed in the silicon-metal single phase by mechanical alloying, and the first peak resulting from the (501) surface of the silicon-metal alloy phase has a greater value than the first peak resulting from the (501) surface of the silicon-metal alloy phase that is not subjected to the mechanical alloying, by 0.6° to 0.9°.

Abstract: A cooling device according to an exemplary embodiment of the present invention includes: a chamber including at least one flexible surface; a piezoelectric element formed in the at least one flexible surface and generating a volume change in the chamber by bending the at least one flexible surface in a first direction or a second direction to generates a first directional air flow or a second directional air flow; an opening formed in the chamber and becoming a channel of the first direction air flow or the second directional air flow; and at least one connection unit connected to the outer side of the chamber and the outer side of a heat source that is provided at a distance from the chamber and connecting the chamber and the heat source.

Abstract: An anode active material for a secondary battery includes an amount of a first element group in a range of about 0 at % (atomic percent) to about 30 at %, an amount of a second element group in a range of about 0 at % to about 20 at %, a balance of silicon and other unavoidable impurities. The first element group may include copper (Cu), iron (Fe), or a mixture thereof, and the second element group may include titanium (Ti), nickel (Ni), manganese (Mn), aluminum (Al), chromium (Cr), cobalt (Co), zinc (Zn), boron (B), beryllium (Be), molybdenum (Mo), tantalum (Ta), sodium (Na), strontium (Sr), phosphorous (P) or mixtures thereof.

Abstract: An anode active material for a secondary battery is provided. The anode active material provides high-capacity, high-efficiency, charging and discharging characteristics. The anode active material for a secondary battery may include a silicon single phase and a silicon-metal alloy phase distributed around the silicon single phase. The silicon-metal alloy phase may include copper, iron, titanium and nickel.

Abstract: An anode active material for a lithium secondary battery having high-capacity and high-efficient charging/discharging characteristics. The anode active material includes silicon single phases, and silicon-metal alloy phases distributed around the silicon single phases. The silicon single phases have a fine structure in which crystalline particles obtained through rapid-cooling solidification are thermally treated to be grown to crystal grains.

Abstract: An anode active material for a lithium secondary battery having high-capacity and high-efficient charge/discharge characteristics. The anode active material includes silicon single phases; and silicon-metal alloy phases surrounding the silicon single phases. A dopant is distributed in the anode active material, and the silicon single phases are formed through rapid-cooling solidification, and the silicon single phases have a fine microstructure due to the dopant.

Abstract: An anode active material for a lithium secondary battery having a high capacity and a high efficiency of charge discharge characteristics. The anode active material includes a silicon mono-phase and an alloy phase formed of silicon with a metal element at least one selected from the group consisting of Ti, Ni, Cu, Fe, Mn, Al, Cr, Co, and Zn. The anode active material is a powder in which the silicon mono-phase is uniformly distributed in a matrix of the alloy phase, has particle size distribution defined as D0.1 and D0.9, and the value of D0.1-D0.9 is in a range from about 3 ?m to about 15 ?m.

Abstract: A gold-silver based wire for a semiconductor package has high humidity reliability as well as high dry reliability. The wire includes a first additive ingredient that contains 5˜15 wt % of at least one kind of elements from among first group elements composed of palladium (Pd) and platinum (Pt) added to a gold (Au)-silver (Ag) based alloy that contains 10˜40 wt % of Ag added to Au.

Abstract: The present invention describes methods of contaminant removal and remediation utilizing hydroexcavation in Hydroexcavation of the soil combination with solvents and/or beneficial microbes, for primary scrubbing and high pressure mixing of the soil. Various embodiments of the present invention are useful for cleaning soil with contaminants, including but not limited to hydrocarbon based materials. The solvent used in conjunction with various embodiments of the present invention comprise a degreasing composition, which may comprise sodium silicate.

Abstract: Provided is a shoe with a cushion and ventilation device. The cushion and ventilation device includes an air pump having an air discharge tube provided at its one side, and an air tube having a connection pipe connecting to the air discharge tube of the air pump, and an air chamber, wherein the air pump is provided by placing an upper sheet having a cavity on a lower sheet having an intake hole, and thermally bonding circumference surfaces of the upper and lower sheets using microwave, and wherein the upper and lower sheets further comprise a sponge having contraction and restoring forces therein.

Abstract: An Ag-based alloy wire for a semiconductor package is highly reliable and can be fabricated with low costs. The Ag-based alloy wire includes 0.05˜5 wt % of at least one kind of a first additive ingredient selected from the group consisting of platinum (Pt), palladium (Pd), rhodium (Rh), osmium (Os), gold (Au), and nickel (Ni), and Ag as a remainder.

Abstract: A semiconductor package using Ag or Ag alloy wire which can maintain superior reliability against a noble metal and lower its manufacturing cost is provided. The semiconductor package comprises a semiconductor substrate. A semiconductor chip is attached to the package substrate and has one or more pads which comprise a noble metal. And one or more wires are bonded so as to electrically connect the one or more pads and the package substrate and comprise Ag or Ag alloy.

Abstract: A gold-silver based wire for a semiconductor package has high humidity reliability as well as high dry reliability. The wire includes a first additive ingredient that contains 5˜15 wt % of at least one kind of elements from among first group elements composed of palladium (Pd) and platinum (Pt) added to a gold (Au)-silver (Ag) based alloy that contains 10˜40 wt % of Ag added to Au.