Abstract: Disclosed is a thermoelectric composite with high-entropy alloy dispersed including a thermoelectric material TE having a composition in a formula TE(x %)+M(y %), and high-entropy alloy particles M having a composition in the formula and dispersed in the thermoelectric material. In the formula, a volume ratio or a molar ratio x of the thermoelectric material to the thermoelectric composite is smaller than 100, and a volume ratio or a molar ratio y of the high-entropy alloy particles to the thermoelectric composite is greater than 0 and smaller than 20.

Abstract: Disclosed is a method for producing a high-entropy alloy superconductor bulk materials and wire materials, the method including a first step of mixing 4 to 10 types of metals selected from a group consisting of niobium (Nb), tantalum (Ta), titanium (Ti), hafnium (Hf), zirconium (Zr), tungsten (W), molybdenum (Mo), chromium (Cr), vanadium (V), and rhenium (Re) with each other to prepare a mixture and then milling the mixture to prepare mixed metal powders; and a second step of sintering the mixed metal powders prepared in the first step.

Abstract: A thermoelectric material containing a dichalcogenide compound represented by Formula 1 and having low thermoelectric conductivity and high Seebeck coefficient: RaTbX2-nYn??(1) wherein R is a rare earth element, T includes at least one element selected from the group consisting of Group 1 elements, Group 2 elements, and a transition metal, X includes at least one element selected from the group consisting of S, Se, and Te, Y is different from X and includes at least one element selected from the group consisting of S, Se, Te, P, As, Sb, Bi, C, Si, Ge, Sn, B, Al, Ga and In, a is greater than 0 and less than or equal to 1, b is greater than or equal to 0 and less than 1, and n is greater than or equal to 0 and less than 2.

Abstract: Disclosed is a thermoelectric material including a Sn-chalcogen-based compound, wherein the Sn is doped with a first dopant element comprising a transition metal element or a p-type metalloid element. Further, disclosed are thermoelectric module and thermoelectric apparatus, comprising the thermoelectric material.

Abstract: Provided is a thermoelectric material satisfying (MX)1+a(TX2)n and having a superlattice structure, wherein M is at least one element selected from the group consisting of Group 13, Group 14, and Group 15, T is at least one element selected from Group 5, X is a chalcogenide element, a is a real number satisfying 0<a<1, and n is a natural number of 1 to 3.

Abstract: Provided is a two-dimensional large-area growth method for a chalcogen compound, the method including: depositing a film of a transition metal element or a Group V element on a substrate; thereafter, uniformly diffusing a vaporized chalcogen element, a vaporized chalcogen precursor compound or a chalcogen compound represented by M?X?2+? within the film; and, thereafter, forming a film of a chalcogen compound represented by MX2 by forming the chalcogen compound represented by MX2 through post-heating.

Abstract: A thermoelectric material containing a dichalcogenide compound represented by Formula 1 and having low thermoelectric conductivity and high Seebeck coefficient: RaTbX2-nYn ??(1) wherein R is a rare earth element, T includes at least one element selected from the group consisting of Group 1 elements, Group 2 elements, and a transition metal, X includes at least one element selected from the group consisting of S, Se, and Te, Y is different from X and includes at least one element selected from the group consisting of S, Se, Te, P, As, Sb, Bi, C, Si, Ge, Sn, B, Al, Ga and In, a is greater than 0 and less than or equal to 1, b is greater than or equal to 0 and less than 1, and n is greater than or equal to 0 and less than 2.

Abstract: A thermoelectric material containing a dichalcogenide compound represented by Formula 1 and having low thermoelectric conductivity and high Seebeck coefficient: RaTbX2-nYn??(1) wherein R is a rare earth element, T includes at least one element selected from the group consisting of Group 1 elements, Group 2 elements, and a transition metal, X includes at least one element selected from the group consisting of S, Se, and Te, Y is different from X and includes at least one element selected from the group consisting of S, Se, Te, P, As, Sb, Bi, C, Si, Ge, Sn, B, Al, Ga and In, a is greater than 0 and less than or equal to 1, b is greater than or equal to 0 and less than 1, and n is greater than or equal to 0 and less than 2.

Abstract: Provided is a two-dimensional large-area growth method for a chalcogen compound, the method including: depositing a film of a transition metal element or a Group V element on a substrate; thereafter, uniformly diffusing a vaporized chalcogen element, a vaporized chalcogen precursor compound or a chalcogen compound represented by M?X?2+? within the film; and, thereafter, forming a film of a chalcogen compound represented by MX2 by forming the chalcogen compound represented by MX2 through post-heating.

Abstract: Provided is a two-dimensional large-area growth method for a chalcogen compound, the method including: depositing a film of a transition metal element or a Group V element on a substrate; thereafter, uniformly diffusing a vaporized chalcogen element, a vaporized chalcogen precursor compound or a chalcogen compound represented by M?X?2+? within the film; and, thereafter, forming a film of a chalcogen compound represented by MX2 by forming the chalcogen compound represented by MX2 through post-heating.

Abstract: Disclosed is a thermoelectric material including a Sn-chalcogen-based compound, wherein the Sn is doped with a first dopant element comprising a transition metal element or a p-type metalloid element. Further, disclosed are thermoelectric module and thermoelectric apparatus, comprising the thermoelectric material.

Abstract: Disclosed is a thermoelectric composite material, comprising a Sb—Te-based matrix, and Ag—Te-based particles dispersed in the matrix phase, wherein an interface is formed between the matrix and the particles. Further, disclosed is a method for producing the thermoelectric composite material.

Abstract: Provided is a thermoelectric material containing: a matrix containing a Group 13 element of chalcogenide; and oxide nanoparticles dispersed into the matrix to have excellent thermal stability, wherein the oxide nanoparticle forms a coherent interphase interface with the Group 13 element of the chalcogenide-based matrix and is elongated in a specific direction, such that thermal conductivity may be effectively decreased with a trace amount of the oxide nanoparticle to minimize deterioration of electric conductivity.

Abstract: Provided is a thermoelectric material satisfying (MX)1+a(TX2)n and having a superlattice structure, wherein M is at least one element selected from the group consisting of Group 13, Group 14, and Group 15, T is at least one element selected from Group 5, X is a chalcogenide element, a is a real number satisfying 0<a<1, and n is a natural number of 1 to 3.

Abstract: Provided is a two-dimensional large-area growth method for a chalcogen compound, the method including: depositing a film of a transition metal element or a Group V element on a substrate; thereafter, uniformly diffusing a vaporized chalcogen element, a vaporized chalcogen precursor compound or a chalcogen compound represented by M?X?2+? within the film; and, thereafter, forming a film of a chalcogen compound represented by MX2 by forming the chalcogen compound represented by MX2 through post-heating.

Abstract: A thermoelectric material having a high performance index and a thermoelectric module and a thermoelectric device including the thermoelectric material, and more particularly, to a thermoelectric material having a high Seebeck coefficient, high electrical conductivity, and low thermal conductivity and a thermoelectric module and a thermoelectric device including the thermoelectric material.

Abstract: Provided is a thermoelectric material containing: a matrix containing a Group 13 element of chalcogenide; and oxide nanoparticles dispersed into the matrix to have excellent thermal stability, wherein the oxide nanoparticle forms a coherent interphase interface with the Group 13 element of the chalcogenide-based matrix and is elongated in a specific direction, such that thermal conductivity may be effectively decreased with a trace amount of the oxide nanoparticle to minimize deterioration of electric conductivity.

Abstract: A thermoelectric material including a compound represented by Formula 1 below: (R1-aR?a)(T1-bT?b)3±y??Formula 1 wherein R and R? are different from each other, and each includes at least one element selected from a rare-earth element and a transition metal, T and T? are different from each other, and each includes at least one element selected from sulfur (S), selenium (Se), tellurium (Te), phosphorus (P), arsenic (As), antimony (Sb), bismuth (Bi), carbon (C), silicon (Si), germanium (Ge), tin (Sn), boron (B), aluminum (Al), gallium (Ga), and indium (In), 0?a?1, 0?b?1, and 0?y<1.

Abstract: A thermoelectric touch sensor includes a first electrode, a thin film layer provided on the first electrode and including a thermoelectric material, a second electrode provided on the thin film layer, a sensing unit which senses at least one of a current flowing between the first electrode and the second electrode and a voltage applied between the first electrode and the second electrode.

Abstract: A thermoelectric material includes a compound represented by Formula 1: AaRbG3±n??Formula 1 wherein component A includes at least one element selected from a Group 1 element, a Group 2 element, and a metal of Groups 3 to 12, component R is a rare-earth element, component G includes at least one element selected from sulfur (S), selenium (Se), tellurium (Te), phosphorus (P), arsenic (As), antimony (Sb), bismuth (Bi), carbon (C), silicon (Si), germanium (Ge), tin (Sn), boron (B), aluminum (Al), gallium (Ga), and indium (In), 0<a?1, 0<b?1, and 0?n<1.