Patents by Inventor Jong-Uk Bae
Jong-Uk Bae has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10157683Abstract: Disclosed is a shift register which prevents current leakage and degradation of an oxide transistor due to light to improve output stability, and a display device using the same. The shift register includes a plurality of stages, and each stage includes a transmission line unit including a plurality of clock lines to supply a plurality of clock signals and a plurality of power lines to supply a plurality of voltages, a transistor unit including a plurality of transistors, and a light-shielding layer overlapping at least one transistor of the transistor unit so as to block light.Type: GrantFiled: April 28, 2016Date of Patent: December 18, 2018Assignee: LG Display Co., Ltd.Inventors: Yong-Ho Jang, Jong-Uk Bae
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Publication number: 20160322116Abstract: Disclosed is a shift register which prevents current leakage and degradation of an oxide transistor due to light to improve output stability, and a display device using the same. The shift register includes a plurality of stages, and each stage includes a transmission line unit including a plurality of clock lines to supply a plurality of clock signals and a plurality of power lines to supply a plurality of voltages, a transistor unit including a plurality of transistors, and a light-shielding layer overlapping at least one transistor of the transistor unit so as to block light.Type: ApplicationFiled: April 28, 2016Publication date: November 3, 2016Inventors: Yong-Ho JANG, Jong-Uk BAE
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Patent number: 9054061Abstract: An OLED display device includes a first oxide semiconductor layer including first to fourth regions; a first gate electrode on a first insulating layer and the first oxide semiconductor layer, and completely overlapping the first region; a first storage electrode extending from the first gate electrode and overlapping the second region; a second insulating layer covering the first gate electrode and the first storage electrode and exposing the third and fourth regions; first source and drain electrodes on the second insulating layer and contacting the third and fourth regions; and an emitting diode connected to the first drain electrode, wherein a portion of the second region at an edge of the first storage electrode except a center of the first storage electrode is conductive to form a second storage electrode, and the first and second storage electrodes and the first insulating layer constitute a first storage capacitor.Type: GrantFiled: November 25, 2014Date of Patent: June 9, 2015Assignee: LG DISPLAY CO., LTD.Inventors: Kyo-Seop Choo, Jong-Uk Bae, Bo-Kyoung Cho
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Publication number: 20150144923Abstract: An OLED display device includes a first oxide semiconductor layer including first to fourth regions; a first gate electrode on a first insulating layer and the first oxide semiconductor layer, and completely overlapping the first region; a first storage electrode extending from the first gate electrode and overlapping the second region; a second insulating layer covering the first gate electrode and the first storage electrode and exposing the third and fourth regions; first source and drain electrodes on the second insulating layer and contacting the third and fourth regions; and an emitting diode connected to the first drain electrode, wherein a portion of the second region at an edge of the first storage electrode except a center of the first storage electrode is conductive to form a second storage electrode, and the first and second storage electrodes and the first insulating layer constitute a first storage capacitor.Type: ApplicationFiled: November 25, 2014Publication date: May 28, 2015Inventors: Kyo-Seop CHOO, Jong-Uk BAE, Bo-Kyoung CHO
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Patent number: 8716062Abstract: A method of fabricating an array substrate and a display device including the array substrate are discussed. According to an embodiment, the array substrate includes a gate electrode formed on a substrate; a gate insulating layer formed on the gate electrode; an oxide semiconductor layer and an etch prevention layer formed on the gate insulating layer, wherein ends of the oxide semiconductor layer and ends of the etch prevention layer are aligned with each other; source and drain electrodes formed on the etch prevention layer; a passivation layer including a contact hole formed on the source and drain electrodes and on the gate insulating layer; and a pixel electrode formed on the passivation layer and through the contact hole.Type: GrantFiled: January 3, 2014Date of Patent: May 6, 2014Assignee: LG Display Co., Ltd.Inventors: Chang-Il Ryoo, Hyun-Sik Seo, Jong-Uk Bae
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Publication number: 20140120659Abstract: A method of fabricating an array substrate and a display device including the array substrate are discussed. According to an embodiment, the array substrate includes a gate electrode formed on a substrate; a gate insulating layer formed on the gate electrode; an oxide semiconductor layer and an etch prevention layer formed on the gate insulating layer, wherein ends of the oxide semiconductor layer and ends of the etch prevention layer are aligned with each other; source and drain electrodes formed on the etch prevention layer; a passivation layer including a contact hole formed on the source and drain electrodes and on the gate insulating layer; and a pixel electrode formed on the passivation layer and through the contact hole.Type: ApplicationFiled: January 3, 2014Publication date: May 1, 2014Applicant: LG Display Co., Ltd.Inventors: Chang-Il RYOO, Hyun-Sik SEO, Jong-Uk BAE
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Patent number: 8659017Abstract: A method of fabricating an array substrate and a display device including the array substrate are discussed. According to an embodiment, the array substrate includes a gate electrode formed on a substrate; a gate insulating layer formed on the gate electrode; an oxide semiconductor layer and an etch prevention layer formed on the gate insulating layer, wherein ends of the oxide semiconductor layer and ends of the etch prevention layer are aligned with each other; source and drain electrodes formed on the etch prevention layer; a passivation layer including a contact hole formed on the source and drain electrodes and on the gate insulating layer; and a pixel electrode formed on the passivation layer and through the contact hole.Type: GrantFiled: June 20, 2013Date of Patent: February 25, 2014Assignee: LG Display Co., Ltd.Inventors: Chang-Il Ryoo, Hyun-Sik Seo, Jong-Uk Bae
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Publication number: 20130277673Abstract: A method of fabricating an array substrate and a display device including the array substrate are discussed. According to an embodiment, the array substrate includes a gate electrode formed on a substrate; a gate insulating layer formed on the gate electrode; an oxide semiconductor layer and an etch prevention layer formed on the gate insulating layer, wherein ends of the oxide semiconductor layer and ends of the etch prevention layer are aligned with each other; source and drain electrodes formed on the etch prevention layer; a passivation layer including a contact hole formed on the source and drain electrodes and on the gate insulating layer; and a pixel electrode formed on the passivation layer and through the contact hole.Type: ApplicationFiled: June 20, 2013Publication date: October 24, 2013Inventors: Chang-Il RYOO, Hyun-Sik SEO, Jong-Uk BAE
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Patent number: 8558225Abstract: A method for fabricating a liquid crystal display (LCD) device include: forming a gate electrode on a substrate; forming a gate insulating layer on the substrate; forming a primary active layer having a tapered portion to a side of a channel region of the primary active layer on the gate insulating layer, and forming source and drain electrodes on the primary active layer; and forming a secondary active layer made of amorphous zinc oxide-based semiconductor on the source and drain electrodes and being in contact with the tapered portion of the primary active layer, wherein the primary active layer is etched at a low selectivity during a wet etching of the source and drain electrodes, to have the tapered portion.Type: GrantFiled: September 23, 2011Date of Patent: October 15, 2013Assignee: LG Display Co., Ltd.Inventors: Jong-Uk Bae, Hyun-Sik Seo, Yong-Yub Kim
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Patent number: 8497147Abstract: A method of fabricating an array substrate and a display device including the array substrate are discussed. According to an embodiment, the method includes forming a gate electrode on a substrate, forming a gate insulating layer on the gate electrode, forming an oxide semiconductor layer and an etch prevention layer on the gate insulating layer using a single mask, forming source and drain electrodes on the etch prevention layer, and forming a passivation layer including a contact hole on the source and drain electrodes and on the gate insulating layer, and forming a pixel electrode on the passivation layer and through the contact hole.Type: GrantFiled: May 25, 2011Date of Patent: July 30, 2013Assignee: LG Display Co., Ltd.Inventors: Chang-Il Ryoo, Hyun-Sik Seo, Jong-Uk Bae
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Patent number: 8455869Abstract: An oxide thin film transistor (TFT) and its fabrication method are disclosed. In a TFT of a bottom gate structure using amorphous zinc oxide (ZnO)-based semiconductor as an active layer, source and drain electrodes are formed, on which the active layer made of oxide semiconductor is formed to thus prevent degeneration of the oxide semiconductor in etching the source and drain electrodes.Type: GrantFiled: May 3, 2012Date of Patent: June 4, 2013Assignee: LG Display Co., Ltd.Inventors: Hyun-Sik Seo, Jong-Uk Bae, Dae-Hwan Kim
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Patent number: 8324111Abstract: Disclosed are a liquid crystal display device employing an amorphous zinc oxide-based semiconductor as an active layer, and a method for fabricating the same, whereby device stability can be secured by employing an etch stopper structure and device characteristics can be enhanced by minimizing exposure and deterioration of the active layer excluding content regions by virtue of the design of the etching stopper in a shape like “H”. Also, the liquid crystal display device and the fabrication method thereof can further form a semiconductor pattern and an insulating layer pattern on the intersection between the gate line and the data line, so as to compensate a stepped portion, thereby preventing an occurrence of short-circuit.Type: GrantFiled: August 3, 2010Date of Patent: December 4, 2012Assignee: LG Display Co., Ltd.Inventors: Jong-Uk Bae, Hyun-Sik Seo, Im-Kuk Kang
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Publication number: 20120261660Abstract: An oxide thin film transistor (TFT) and its fabrication method are disclosed. In a TFT of a bottom gate structure using amorphous zinc oxide (ZnO)-based semiconductor as an active layer, source and drain electrodes are formed, on which the active layer made of oxide semiconductor is formed to thus prevent degeneration of the oxide semiconductor in etching the source and drain electrodes.Type: ApplicationFiled: May 3, 2012Publication date: October 18, 2012Inventors: Hyun-Sik Seo, Jong-Uk Bae, Dae-Hwan Kim
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Patent number: 8187919Abstract: An oxide thin film transistor (TFT) and its fabrication method are disclosed. In a TFT of a bottom gate structure using amorphous zinc oxide (ZnO)-based semiconductor as an active layer, source and drain electrodes are formed, on which the active layer made of oxide semiconductor is formed to thus prevent degeneration of the oxide semiconductor in etching the source and drain electrodes.Type: GrantFiled: August 27, 2009Date of Patent: May 29, 2012Assignee: LG Display Co. Ltd.Inventors: Hyun-Sik Seo, Jong-Uk Bae, Dae-Hwan Kim
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Publication number: 20120012839Abstract: A method for fabricating a liquid crystal display (LCD) device include: forming a gate electrode on a substrate; forming a gate insulating layer on the substrate; forming a primary active layer having a tapered portion to a side of a channel region of the primary active layer on the gate insulating layer, and forming source and drain electrodes on the primary active layer; and forming a secondary active layer made of amorphous zinc oxide-based semiconductor on the source and drain electrodes and being in contact with the tapered portion of the primary active layer, wherein the primary active layer is etched at a low selectivity during a wet etching of the source and drain electrodes, to have the tapered portion.Type: ApplicationFiled: September 23, 2011Publication date: January 19, 2012Inventors: Jong-Uk BAE, Hyun-Sik Seo, Yong-Yub Kim
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Publication number: 20110291096Abstract: A method of fabricating an array substrate and a display device including the array substrate are discussed. According to an embodiment, the method includes forming a gate electrode on a substrate, forming a gate insulating layer on the gate electrode, forming an oxide semiconductor layer and an etch prevention layer on the gate insulating layer using a single mask, forming source and drain electrodes on the etch prevention layer, and forming a passivation layer including a contact hole on the source and drain electrodes and on the gate insulating layer, and forming a pixel electrode on the passivation layer and through the contact hole.Type: ApplicationFiled: May 25, 2011Publication date: December 1, 2011Inventors: Chang-Il RYOO, Hyun-Sik Seo, Jong-Uk Bae
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Patent number: 8062936Abstract: A method of fabricating an array substrate for a display device includes steps of forming a gate line and a gate electrode on a substrate, forming a gate insulating layer and an intrinsic amorphous silicon layer, forming an oxide semiconductor layer, increasing a conductive property of the oxide semiconductor layer, forming a metal layer, forming a first photoresist pattern and a second photoresist pattern having a thinner thickness than the first photoresist pattern, forming a data line, a source drain pattern, an oxide semiconductor pattern and an active layer, removing the second photoresist pattern and exposing the source drain pattern, wet-etching the source drain pattern using a first etchant, thereby forming source and drain electrodes, wet-etching the oxide semiconductor pattern using a second etchant, thereby forming ohmic contact layers, removing the first photoresist pattern, forming a passivation layer having a drain contact hole exposing the drain electrode on the source and drain electrodes, andType: GrantFiled: December 23, 2009Date of Patent: November 22, 2011Assignee: LG Display Co., Ltd.Inventors: Hyun-Sik Seo, Jong-Uk Bae, Dae-Hwan Kim
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Patent number: 8058116Abstract: A method for fabricating a liquid crystal display (LCD) device include: forming a gate electrode on a substrate; forming a gate insulating layer on the substrate; forming a primary active layer having a tapered portion to a side of a channel region of the primary active layer on the gate insulating layer, and forming source and drain electrodes on the primary active layer; and forming a secondary active layer made of amorphous zinc oxide-based semiconductor on the source and drain electrodes and being in contact with the tapered portion of the primary active layer, wherein the primary active layer is etched at a low selectivity during a wet etching of the source and drain electrodes, to have the tapered portion.Type: GrantFiled: November 13, 2009Date of Patent: November 15, 2011Assignee: LG Display Co., Ltd.Inventors: Jong-Uk Bae, Hyun-Sik Seo, Yong-Yub Kim
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Patent number: 7981720Abstract: According to a method of fabricating an oxide thin-film transistor, when a thin-film transistor is fabricated by using an amorphous zinc oxide (ZnO)-based semiconductor as an active layer, it may be possible to reduce a tact time as well as attain an enhanced element characteristic by depositing an insulation layer having an oxide characteristic in-situ through controlling oxygen (O2) flow subsequent to depositing an oxide semiconductor using a sputter, and the method may include the steps of forming a gate electrode on a substrate; forming a gate insulation layer on the substrate; depositing an amorphous zinc oxide-based semiconductor layer made of an amorphous zinc oxide-based semiconductor and an amorphous zinc oxide-based insulation layer having an oxide characteristic in-situ on the gate insulation layer; forming an active layer made of the amorphous zinc oxide-based semiconductor over the gate electrode while at the same time forming a channel protection layer made of the amorphous zinc oxide-based insuType: GrantFiled: December 29, 2009Date of Patent: July 19, 2011Assignee: LG Display Co., Ltd.Inventors: Dae-Won Kim, Jong-Uk Bae
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Publication number: 20110108832Abstract: Disclosed are a liquid crystal display device employing an amorphous zinc oxide-based semiconductor as an active layer, and a method for fabricating the same, whereby device stability can be secured by employing an etch stopper structure and device characteristics can be enhanced by minimizing exposure and deterioration of the active layer excluding content regions by virtue of the design of the etching stopper in a shape like “H”. Also, the liquid crystal display device and the fabrication method thereof can further form a semiconductor pattern and an insulating layer pattern on the intersection between the gate line and the data line, so as to compensate a stepped portion, thereby preventing an occurrence of short-circuit.Type: ApplicationFiled: August 3, 2010Publication date: May 12, 2011Inventors: Jong-Uk Bae, Hyun-Sik Seo, Im-Kuk Kang