Abstract: A semiconductor memory device including a substrate, a first element isolation film pattern, and a second element isolation film pattern. The substrate includes a first region and a second region. The first element isolation film pattern is in the first region and corresponds to a first active region. The second element isolation film pattern is in the second region and corresponds to a second active region. The first element isolation film pattern includes a first material and the second element isolation film pattern includes a second material different from the first material.

Abstract: Provided is a semiconductor device, including a substrate including a device isolation layer and an active region isolated by the device isolation layer; a trench in the active region; a gate electrode filling at least a portion of the trench; a recess in the substrate at one side of the gate electrode, the recess overlapping a portion of the device isolation layer and the active region; and a lower contact plug filling the recess.

Abstract: Methods of fabricating semiconductor devices are provided including providing a substrate having a first region and a second region, the substrate defining trenches in the first and second regions; forming active fins on the first and second regions, the active fins protruding from the trenches in the first and second regions; forming spacers on sidewalls of the active fins in the first and second regions; recessing floors of the trenches under the spacers to provide extensions of the active fins; implanting impurities of a first type in the extensions of the active fins in the first region; and implanting impurities of a second, type, different from the first type, in the extensions of the active fins in the second region.

Abstract: A semiconductor memory device includes a substrate including cell block, a balancing block, and a sense block. A plurality of cell bit lines are formed in the cell block of. A plurality of cell plugs are formed adjacent to side surfaces of the bit lines. Cell inner spacers, air spacers, and cell outer spacers are formed between the cell bit lines and the cell plugs. A plurality of balancing bit lines are formed in the balancing block. A plurality of balancing plugs are formed adjacent to side surfaces of the balancing bit lines. Balancing inner spacers and balancing outer spacers are formed between the balancing bit lines and the balancing plugs. The balancing bit lines and at least some of the cell bit lines are connected to the sense block.

Abstract: A semiconductor memory device including a substrate, a first element isolation film pattern, and a second element isolation film pattern. The substrate includes a first region and a second region. The first element isolation film pattern is in the first region and corresponds to a first active region. The second element isolation film pattern is in the second region and corresponds to a second active region. The first element isolation film pattern includes a first material and the second element isolation film pattern includes a second material different from the first material.

Abstract: Provided is a semiconductor device, including a substrate including a device isolation layer and an active region isolated by the device isolation layer; a trench in the active region; a gate electrode filling at least a portion of the trench; a recess in the substrate at one side of the gate electrode, the recess overlapping a portion of the device isolation layer and the active region; and a lower contact plug filling the recess.

Abstract: Methods of fabricating semiconductor devices are provided including providing a substrate having a first region and a second region, the substrate defining trenches in the first and second regions; forming active fins on the first and second regions, the active fins protruding from the trenches in the first and second regions; forming spacers on sidewalls of the active fins in the first and second regions; recessing floors of the trenches under the spacers to provide extensions of the active fins; implanting impurities of a first type in the extensions of the active fins in the first region; and implanting impurities of a second, type, different from the first type, in the extensions of the active fins in the second region.

Abstract: A semiconductor memory device includes a substrate including cell block, a balancing block, and a sense block. A plurality of cell bit lines are formed in the cell block of. A plurality of cell plugs are formed adjacent to side surfaces of the bit lines. Cell inner spacers, air spacers, and cell outer spacers are formed between the cell bit lines and the cell plugs. A plurality of balancing bit lines are formed in the balancing block. A plurality of balancing plugs are formed adjacent to side surfaces of the balancing bit lines. Balancing inner spacers and balancing outer spacers are formed between the balancing bit lines and the balancing plugs. The balancing bit lines and at least some of the cell bit lines are connected to the sense block.

Abstract: In a method of manufacturing a semiconductor device, a trench is formed by removing an upper portion of a substrate. A gate insulation layer pattern is formed on an inner wall of the trench. A gate electrode is formed on the gate insulation layer pattern. The gate electrode fills a lower portion of the trench. A capping layer is formed on the gate electrode and the gate insulation layer pattern. The capping layer is partially oxidized to form a first capping layer pattern and a second capping layer pattern. The first capping layer pattern is not oxidized, and the second capping layer pattern is oxidized. A third capping layer pattern is formed on the second capping layer pattern, the third capping layer pattern filling an upper portion of the trench.

Abstract: In a method of manufacturing a semiconductor device, a mask is formed on a substrate. The substrate is divided into a first region and a second region. An upper portion of the substrate in the first region is partially removed using the mask as an etching mask to form a recess. A first gate structure is formed in the recess. A portion of the mask in the first region is removed. A blocking layer pattern is formed on the substrate in the first region over the first gate structure.

Abstract: Provided is an automotive lamp, and more particularly, an automotive lamp which can secure a forward long-range field of view without requiring an additional light source. The automotive lamp having a plurality of light distribution patterns of Class-W, Class-V, Class-C, Class-E, and High and includes: a plurality of lamp units in which light-emitting diodes (LEDs) turned on or off according to each of the light distribution patterns or having different illumination patterns are installed; an actuator driving the lamp units; and a controller enabling a switch from any one of the light distribution patterns to another one of the light distribution patterns by controlling at least one of the actuator and a value of current supplied to each of the lamp units.

Abstract: In a method of manufacturing a semiconductor device, a mask is formed on a substrate. The substrate is divided into a first region and a second region. An upper portion of the substrate in the first region is partially removed using the mask as an etching mask to form a recess. A first gate structure is formed in the recess. A portion of the mask in the first region is removed. A blocking layer pattern is formed on the substrate in the first region over the first gate structure.

Abstract: Provided is an automotive lamp, and more particularly, an automotive lamp which can secure a forward long-range field of view without requiring an additional light source. The automotive lamp having a plurality of light distribution patterns of Class-W, Class-V, Class-C, Class-E, and High and includes: a plurality of lamp units in which light-emitting diodes (LEDs) turned on or off according to each of the light distribution patterns or having different illumination patterns are installed; an actuator driving the lamp units; and a controller enabling a switch from any one of the light distribution patterns to another one of the light distribution patterns by controlling at least one of the actuator and a value of current supplied to each of the lamp units.

Abstract: A headlamp assembly for providing various beam patterns for a vehicle is provided, which includes a lamp shield driving device. The device comprises a first shield including at least one shield projection formed on a circumference thereof, a second shield to shield at least a part of beam irradiation in a close range, and a shield driving unit to drive the first shield and the second shield in a sequential order to thereby generate a certain beam pattern.

Abstract: A headlamp capable of preventing dazzling of an opposite driver is provided. The headlamp includes a projection lens, a reflector, a light source disposed at a first focal point of the reflector, and a light shade part positioned around a second focal point of the reflector. The light shade part includes a first shade comprising a plurality of shading plates for forming a desired light distribution pattern and a second shade formed as a continuous surface or discrete surfaces connected to the uppermost surfaces of the shading plates of the first shade.

Abstract: Provided is an adaptive front light system (AFLS) for a vehicle. The AFLS comprising one or more light-emitting diode (LED) lamp units and a housing which accommodates the LED lamp units, wherein each of the LED lamp units comprises one or more LEDs as its light source and a reflector which reflects light emitted by the light source so that the reflected light can be directed forward, and said adaptive front light system is operable to form different beam patterns by selectively turning on or off the lamp units, and wherein one or more reflectors of the lamp units comprise a multi-face reflector including a plurality of cells having different curvature radiuses or focal points.

Abstract: Provided is a lamp unit using light-emitting-diode (LED) light sources, more particularly, a lamp unit using LED light sources which can generate a low beam and a high beam using LED light sources. The lamp unit includes a first LED light source unit which includes a first row of LED light sources; a second LED light source unit which includes a second row of LED light sources that is disposed below the first row of LED light sources; and a reflection plate which comprises a reflection surface that projects a low beam or a high beam upon turning on or off the first or second LED light source unit.

Abstract: A headlamp capable of preventing dazzling of an opposite driver is provided. The headlamp includes a projection lens, a reflector, a light source disposed at a first focal point of the reflector, and a light shade part positioned around a second focal point of the reflector. The light shade part includes a first shade comprising a plurality of shading plates for forming a desired light distribution pattern and a second shade formed as a continuous surface or discrete surfaces connected to the uppermost surfaces of the shading plates of the first shade.

Abstract: Provided is an adaptive front light system (AFLS) for a vehicle. The AFLS comprising one or more light-emitting diode (LED) lamp units and a housing which accommodates the LED lamp units, wherein each of the LED lamp units comprises one or more LEDs as its light source and a reflector which reflects light emitted by the light source so that the reflected light can be directed forward, and said adaptive front light system is operable to form different beam patterns by selectively turning on or off the lamp units, and wherein one or more reflectors of the lamp units comprise a multi-face reflector including a plurality of cells having different curvature radiuses or focal points.

Abstract: A headlamp assembly for providing various beam patterns for a vehicle is provided, which includes a lamp shield driving device. The device comprises a first shield including at least one shield projection formed on a circumference thereof, a second shield to shield at least a part of beam irradiation in a close range, and a shield driving unit to drive the first shield and the second shield in a sequential order to thereby generate a certain beam pattern.