Patents by Inventor Jong Wan Jung
Jong Wan Jung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11956998Abstract: A display device includes: a first substrate including a pixel area and a transmissive area; a thin-film transistor on the first substrate; a planarization layer on the thin-film transistor; a first light emitting electrode on the planarization layer; a bank covering a part of the first light emitting electrode; a light emitting layer on the first light emitting electrode; and a second light emitting electrode on the light emitting layer and the bank. The transmissive area includes a transmissive hole penetrating the bank and the planarization layer.Type: GrantFiled: January 4, 2023Date of Patent: April 9, 2024Assignee: Samsung Display Co., Ltd.Inventors: Se Wan Son, Moo Soon Ko, Rae Young Gwak, Jin Seock Ma, Min Jeong Park, Ki Bok Yoo, So La Lee, Jin Goo Jung, Jong Won Chae, Ye Ji Han
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Patent number: 8174057Abstract: According to a CMOS image device and a method of manufacturing same, dark current is decreased by a local impurity region. The image device includes a semiconductor substrate, and a transfer gate formed on a predetermined portion of the semiconductor substrate and electrically insulated from the semiconductor substrate. A photodiode is formed in the semiconductor substrate on one side of the transfer gate, and a floating diffusion region is formed on the semiconductor substrate in the other side of the transfer gate. A local impurity region of a first conductivity type is formed to be partially overlapped the transfer gate between the photodiode and the floating diffusion region.Type: GrantFiled: March 2, 2009Date of Patent: May 8, 2012Assignee: Samsung Electronics Co., Ltd.Inventors: Seok-ha Lee, Jae-seob Roh, Jong-Wan Jung
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Patent number: 7825438Abstract: A CMOS image sensor cell includes a semiconductor active region of first conductivity type having a surface thereon and a P-N junction photodiode in the active region. A drive transistor is also provided in the semiconductor active region. The drive transistor has a gate electrode that is configured to receive charge generated in the P-N junction photodiode during an image capture operation (i.e., during capture of photons received from an image). This drive transistor has a gate electrode and a contoured channel region extending underneath the gate electrode. The contoured channel region has an effective channel length greater than a length of the gate electrode.Type: GrantFiled: August 9, 2006Date of Patent: November 2, 2010Assignee: Samsung Electronics Co., Ltd.Inventors: Jong-wan Jung, Duck-hyung Lee
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Patent number: 7601580Abstract: An image sensor may include a semiconductor substrate having a pixel array region and a logic region. A first gate electrode may be formed on the pixel array region of the semiconductor substrate. A lower electrode may be formed on a portion of the logic region of the semiconductor substrate. A first capping layer may be formed on at least a portion of the lower electrode. A dielectric layer may be formed on the first capping layer. An upper electrode may be formed on the dielectric layer. The first gate electrode and the lower electrode may include a polysilicon layer, and the first capping layer may include at least one of a metal layer and a metal silicide layer.Type: GrantFiled: February 15, 2007Date of Patent: October 13, 2009Assignee: Samsung Electronics Co., Ltd.Inventor: Jong-Wan Jung
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Patent number: 7579637Abstract: An image sensor and a method of fabricating the image sensor are provided. The image sensor includes a semiconductor substrate having a first conductivity type, a deep well having a second conductivity type. The deep well is formed at a predetermined depth in the semiconductor substrate to divide the semiconductor substrate into a first conductivity type upper substrate area and a lower substrate area. The image sensor further includes a plurality of unit pixels integrating charges corresponding to incident light and comprising first conductivity type ion-implantation areas. The first conductivity type ion-implantation areas are separated from one another. Moreover, at least one unit pixel among the plurality of unit pixels further comprises the first conductivity type upper substrate area that is positioned under a first conductivity type ion-implantation area included in the unit pixel.Type: GrantFiled: March 27, 2006Date of Patent: August 25, 2009Assignee: Samsung Electronics Co., Ltd.Inventors: Jung-Hyun Nam, Jong-Wan Jung
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Publication number: 20090166696Abstract: According to a CMOS image device and a method of manufacturing same, dark current is decreased by a local impurity region. The image device includes a semiconductor substrate, and a transfer gate formed on a predetermined portion of the semiconductor substrate and electrically insulated from the semiconductor substrate. A photodiode is formed in the semiconductor substrate on one side of the transfer gate, and a floating diffusion region is formed on the semiconductor substrate in the other side of the transfer gate. A local impurity region of a first conductivity type is formed to be partially overlapped the transfer gate between the photodiode and the floating diffusion region.Type: ApplicationFiled: March 2, 2009Publication date: July 2, 2009Inventors: Seok-ha Lee, Jae-seob Roh, Jong-Wan Jung
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Patent number: 7518172Abstract: An image sensor is provided. The image sensor includes a substrate; a first isolation region, a second isolation region, a plurality of photoelectric transducer devices, a read element and a floating diffusion region. The second isolation region has a depth that is less than that of the first isolation region. The plurality of photoelectric transducer devices is isolated from one another by the first isolation region. The read element and the floating diffusion region are isolated from the photoelectric transducer devices by the second isolation region.Type: GrantFiled: January 30, 2007Date of Patent: April 14, 2009Assignee: Samsung Electronics Co., Ltd.Inventors: Chang-rok Moon, Yun-hee Lee, Jong-wan Jung, Byung-jun Park
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Patent number: 7514733Abstract: According to a CMOS image device and a method of manufacturing same, dark current is decreased by a local impurity region. The image device includes a semiconductor substrate, and a transfer gate formed on a predetermined portion of the semiconductor substrate and electrically insulated from the semiconductor substrate. A photodiode is formed in the semiconductor substrate on one side of the transfer gate, and a floating diffusion region is formed on the semiconductor substrate in the other side of the transfer gate. A local impurity region of a first conductivity type is formed to be partially overlapped the transfer gate between the photodiode and the floating diffusion region.Type: GrantFiled: March 13, 2006Date of Patent: April 7, 2009Assignee: Samsung Electronics Co., Ltd.Inventors: Seok-ha Lee, Jae-seob Roh, Jong-Wan Jung
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Publication number: 20070194356Abstract: An image sensor is provided. The image sensor includes a substrate; a first isolation region, a second isolation region, a plurality of photoelectric transducer devices, a read element and a floating diffusion region. The second isolation region has a depth that is less than that of the first isolation region. The plurality of photoelectric transducer devices is isolated from one another by the first isolation region. The read element and the floating diffusion region are isolated from the photoelectric transducer devices by the second isolation region.Type: ApplicationFiled: January 30, 2007Publication date: August 23, 2007Inventors: Chang-rok Moon, Yun-hee Lee, Jong-wan Jung, Byung-jun Park
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Publication number: 20070190679Abstract: An image sensor may include a semiconductor substrate having a pixel array region and a logic region. A first gate electrode may be formed on the pixel array region of the semiconductor substrate. A lower electrode may be formed on a portion of the logic region of the semiconductor substrate. A first capping layer may be formed on at least a portion of the lower electrode. A dielectric layer may be formed on the first capping layer. An upper electrode may be formed on the dielectric layer. The first gate electrode and the lower electrode may include a polysilicon layer, and the first capping layer may include at least one of a metal layer and a metal silicide layer.Type: ApplicationFiled: February 15, 2007Publication date: August 16, 2007Inventor: Jong-Wan Jung
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Publication number: 20070034965Abstract: A CMOS image sensor cell includes a semiconductor active region of first conductivity type having a surface thereon and a P-N junction photodiode in the active region. A drive transistor is also provided in the semiconductor active region. The drive transistor has a gate electrode that is configured to receive charge generated in the P-N junction photodiode during an image capture operation (i.e., during capture of photons received from an image). This drive transistor has a gate electrode and a contoured channel region extending underneath the gate electrode. The contoured channel region has an effective channel length greater than a length of the gate electrode.Type: ApplicationFiled: August 9, 2006Publication date: February 15, 2007Inventors: Jong-wan Jung, Duck-hyung Lee
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Publication number: 20060284274Abstract: According to a CMOS image device and a method of manufacturing same, dark current is decreased by a local impurity region. The image device includes a semiconductor substrate, and a transfer gate formed on a predetermined portion of the semiconductor substrate and electrically insulated from the semiconductor substrate. A photodiode is formed in the semiconductor substrate on one side of the transfer gate, and a floating diffusion region is formed on the semiconductor substrate in the other side of the transfer gate. A local impurity region of a first conductivity type is formed to be partially overlapped the transfer gate between the photodiode and the floating diffusion region.Type: ApplicationFiled: March 13, 2006Publication date: December 21, 2006Inventors: Seok-ha Lee, Jae-seob Roh, Jong-Wan Jung
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Publication number: 20060214249Abstract: An image sensor and a method of fabricating the image sensor are provided. The image sensor includes a semiconductor substrate having a first conductivity type, a deep well having a second conductivity type. The deep well is formed at a predetermined depth in the semiconductor substrate to divide the semiconductor substrate into a first conductivity type upper substrate area and a lower substrate area. The image sensor further includes a plurality of unit pixels integrating charges corresponding to incident light and comprising first conductivity type ion-implantation areas. The first conductivity type ion-implantation areas are separated from one another. Moreover, at least one unit pixel among the plurality of unit pixels further comprises the first conductivity type upper substrate area that is positioned under a first conductivity type ion-implantation area included in the unit pixel.Type: ApplicationFiled: March 27, 2006Publication date: September 28, 2006Inventors: Jung-Hyun Nam, Jong-Wan Jung
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Patent number: 6914311Abstract: The claimed invention relates to a semiconductor device and a method of fabricating the semiconductor device. More particularly, the claimed invention relates to a method of fabricating the semiconductor device in which parts of a gate electrode at the ends of a channel are lightly doped compared to the center part of the gate electrode, thereby eliminating a hump on a subthreshold current slope. To achieve the objects of the claimed invention, there is provided a semiconductor device that includes a semiconductor substrate divided into an isolation region and an active region. A gate oxide film is formed on a first upper surface of the active region. A gate electrode is formed on a second upper surface of the gate oxide film, the gate electrode having a first part and a second part. The first part is more lightly doped with impurities than the second part. A channel is formed in an upper end of the active region proximate the gate electrode.Type: GrantFiled: November 13, 2002Date of Patent: July 5, 2005Assignee: Hynix Semiconductor Inc.Inventors: Jong-Wan Jung, Jeong Seok Nam
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Publication number: 20030068874Abstract: The claimed invention relates to a semiconductor device and a method of fabricating the semiconductor device. More particularly, the claimed invention relates to a method of fabricating the semiconductor device in which parts of a gate electrode at the ends of a channel are lightly doped compared to the center part of the gate electrode, thereby eliminating a hump on a subthreshold current slope. To achieve the objects of the claimed invention, there is provided a semiconductor device that includes a semiconductor substrate divided into an isolation region and an active region. A gate oxide film is formed on a first upper surface of the active region. A gate electrode is formed on a second upper surface of the gate oxide film, the gate electrode having a first part and a second part. The first part is more lightly doped with impurities than the second part. A channel is formed in an upper end of the active region proximate the gate electrode.Type: ApplicationFiled: November 13, 2002Publication date: April 10, 2003Applicant: Hyundai Electronics Industries Co., Ltd.Inventors: Jong-Wan Jung, Jeong Seok Nam
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Patent number: 6498085Abstract: The claimed invention relates to a semiconductor device and a method of fabricating the semiconductor device. More particularly, the claimed invention relates to a method of fabricating the semiconductor device in which parts of a gate electrode at the ends of a channel are lightly doped compared to the center part of the gate electrode, thereby eliminating a hump on a subthreshold current slope. To achieve the objects of the claimed invention, there is provided a semiconductor device that includes a semiconductor substrate divided into an isolation region and an active region. A gate oxide film is formed on a first upper surface of the active region. A gate electrode is formed on a second upper surface of the gate oxide film, the gate electrode having a first part and a second part. The first part is more lightly doped with impurities than the second part. A channel is formed in an upper end of the active region proximate the gate electrode.Type: GrantFiled: December 1, 2000Date of Patent: December 24, 2002Assignee: Hyundai Electronics Industries Co., Ltd.Inventors: Jong-Wan Jung, Jeong Seok Nam
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Patent number: 6479357Abstract: A method for fabricating a semiconductor device including the steps of: forming a gate insulation film on the upper surface of a semiconductor substrate; forming a dummy layer pattern on the upper surface of the gate insulation film; forming an insulating side wall spacer on both side walls of the dummy layer pattern; injecting an impurity ion into the semiconductor substrate of the both sides of the side wall spacer, to form a source and a drain; forming an insulation layer in a manner that the entire upper surface of the semiconductor substrate becomes higher than the dummy layer pattern; performing a chemical-mechanical polishing step, to expose the upper surface of the dummy layer pattern; etching the dummy layer pattern and forming a trench on the gate insulation film; forming a barrier film on the inner wall of the trench and on the upper surface of the insulation layer; and filling the trench with copper layer.Type: GrantFiled: July 17, 2000Date of Patent: November 12, 2002Assignee: Hyundai Electronics Industries Co., Ltd.Inventor: Jong-Wan Jung
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Publication number: 20010010381Abstract: The claimed invention relates to a semiconductor device and a method of fabricating the semiconductor device. More particularly, the claimed invention relates to a method of fabricating the semiconductor device in which parts of a gate electrode at the ends of a channel are lightly doped compared to the center part of the gate electrode, thereby eliminating a hump on a subthreshold current slope. To achieve the objects of the claimed invention, there is provided a semiconductor device that includes a semiconductor substrate divided into an isolation region and an active region. A gate oxide film is formed on a first upper surface of the active region. A gate electrode is formed on a second upper surface of the gate oxide film, the gate electrode having a first part and a second part. The first part is more lightly doped with impurities than the second part. A channel is formed in an upper end of the active region proximate the gate electrode.Type: ApplicationFiled: December 1, 2000Publication date: August 2, 2001Applicant: Hyundai Electronics Industries Co., Ltd.Inventors: Jong-Wan Jung, Jeong Seok Nam
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Patent number: 6204105Abstract: A method for fabricating a semiconductor device includes the steps of forming a field oxide layer on a field region of a semiconductor substrate where a field region and an active region are defined, forming a polycide layer on the entire surface of the semiconductor substrate including the field oxide layer and selectively removing the polycide layer to form a gate electrode and a lower electrode of a capacitor, successively forming a dielectric layer and a polysilicon layer on the entire surface including the lower electrode of the capacitor and patterning the dielectric layer and the lower electrode to form an upper electrode pattern and a resistor pattern, and forming an insulating layer to cover the resistor pattern and forming another polycide layer on the upper electrode of the capacitor.Type: GrantFiled: June 13, 1997Date of Patent: March 20, 2001Assignee: LG Semicon Co., Ltd.Inventor: Jong Wan Jung
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Patent number: 5985744Abstract: A method for fabricating a semiconductor device includes forming a plurality of field oxide layers on a semiconductor substrate to define an active region; forming a plurality of gate electrodes each having sidewall spacers on the active region of the semiconductor substrate, depositing a metal layer on the semiconductor substrate including the plurality of gate electrodes, defining a first region and a second region, removing the metal layer over the second region, and forming a silicide layer on the gate electrode and on the semiconductor substrate over the first region with a first annealing process.Type: GrantFiled: November 5, 1997Date of Patent: November 16, 1999Assignee: LG Semicon Co., Ltd.Inventor: Jong Wan Jung