Abstract: Provided is an apparatus for treating a substrate, the apparatus including: an equipment front end module including a load port and a transfer frame; a process chamber for performing a process treatment on a substrate; and a load lock chamber disposed in a transfer path of the substrate transferred between the transfer frame and the process chamber, in which the load lock chamber includes: a housing having an interior space; a compartmentalizing plate for compartmentalizing the interior space into a first space, and a second space independent of the first space; and an aligning unit for aligning a notch of the substrate provided in any one of the first space and the second space.

Abstract: A method for manufacturing a LiDAR device is proposed. The method may include providing a LiDAR module including a laser emitting module and a laser detecting module to a target region. The method may also include adjusting, on the basis of first detecting data obtained from the laser detecting module, a relative position of a detecting optic module with respect to the laser detecting module. The method may further include adjusting, on the basis of image data obtained from at least one image sensor, a relative position of an emitting optic module with respect to the laser emitting module.

Abstract: The present disclosure provides a polishing pad, which may maintain polishing performances required for a polishing process, such as a removal rate and a polishing profile, minimize defects that may occur on a wafer during the polishing process, and polish layers of different materials so as to have the same level of flatness even when the layers are polished at the same time, and a method for producing the polishing pad. In addition, according to the present disclosure, it is possible to determine a polishing pad, which shows an optimal removal rate selectivity along with excellent performance in a CMP process, through the physical property values of the polishing pad without a direct polishing test.

Abstract: The present invention relates to an electrolyte solution and a secondary battery including the same. According to the present invention, the present invention has an effect of providing a secondary battery having improved charging efficiency and output due to low discharge resistance and having a long lifespan and excellent high-temperature capacity retention by suppressing gas generation and increase in thickness.

Abstract: The present invention relates to an electrolyte solution and a secondary battery including the same. According to the present invention, the present invention has an effect of providing a secondary battery having improved charging efficiency and output due to low discharge resistance and having a long lifespan and excellent high-temperature capacity retention by suppressing gas generation and increase in thickness.

Abstract: The present invention relates to an electrolyte solution and a secondary battery including the same. According to the present invention, the present invention has an effect of providing a secondary battery having improved charging efficiency and output due to low discharge resistance and having a long lifespan and excellent high-temperature capacity retention by suppressing gas generation and increase in thickness.

Abstract: A battery pack is advantageous for effective control and maintenance of thermal events. A battery pack according to one aspect of the present disclosure may include a battery module having one or more battery cells; a fire extinguishing tank holding a fire extinguishing liquid, disposed on top of the battery module and having a through hole formed therein; and a cover member installed in the through hole of the fire extinguishing tank and configured to open or close the through hole according to a change in internal pressure of the fire extinguishing tank.

Abstract: The present invention relates to an electrolyte solution and a secondary battery including the same. According to the present invention, the present invention has an effect of providing a secondary battery having improved charging efficiency and output due to low discharge resistance and having a long lifespan and excellent high-temperature capacity retention by suppressing gas generation and increase in thickness.

Abstract: A substrate processing apparatus includes: a substrate holding unit configured to hold and rotate a substrate; an etching unit configured to etch a surface of a substrate by discharging a processing liquid to the substrate rotated by the substrate holding unit; and a control unit configured to control an etching amount by the etching unit. In the substrate processing apparatus, the control unit controls an etching amount at each position on the surface of the substrate based on information upon a characteristic of a surface processing to be performed on the substrate by a post-processing apparatus which is configured to perform a post-processing after a substrate processing by the substrate processing apparatus.

Abstract: A lens includes a lens unit, an uneven layer formed on at least a portion of a surface of the lens unit, a buffer layer covering the uneven layer and having a shape conforming to an uneven surface of the uneven layer, and a water-repellent layer covering the buffer layer.

Abstract: A substrate processing apparatus 10 includes processing units 16 each configured to process a wafer W; tanks 102 and 202 each configured to store a processing liquid; processing liquid supply units 103 and 203 each configured to supply the processing liquid into the processing unit 16; drain units 110 and 210 each configured to drain the processing liquid; supplement units 112 and 212 each configured to supplement the tanks 102 and 202 with the processing liquids; and a control unit 18. The control unit 18 is configured to perform a process job by controlling the processing liquid supply units 103 and 203 and the processing unit 16 and perform, when predetermined liquid exchange conditions are met during the performing of the process job, a liquid exchange processing in parallel with the process job by controlling the drain units 110 and 210 and the supplement units 112 and 212.

Abstract: A pellicle for extreme ultraviolet lithography includes a pellicle part configured to include a center layer and a reinforcing layer. The center layer essentially contains silicon (Si), and additionally contains at least one material of zirconium (Zr), zinc (Zn), ruthenium (Ru), and molybdenum (Mo). The reinforcing layer is made of a material containing at least one of silicon (Si), boron (B), zirconium (Zr), nitrogen (N), carbon (C), and oxygen (O). A thickness of the pellicle is minimized, and as a result, the pellicle has excellent mechanical, thermal, and chemical properties while maintaining high transmittance to EUV exposure light.

Abstract: Disclosed is a pellicle for extreme ultraviolet (EUV) lithography, with a core layer formed on a pellicle frame, the core layer comprising: a first layer; and a second layer. The first layer includes silicon. The second layer includes one among a metal silicide that has silicon with metal, a silicon compound that has silicon with a light element, and a metal silicide compound that has silicon with metal and a light element. With this, the pellicle is improved in mechanical, thermal and chemical stability with minimum loss of optical characteristics.

Abstract: A substrate processing apparatus includes: a substrate holding unit configured to hold and rotate a substrate; an etching unit configured to etch a surface of a substrate by discharging a processing liquid to the substrate rotated by the substrate holding unit; and a control unit configured to control an etching amount by the etching unit. In the substrate processing apparatus, the control unit controls an etching amount at each position on the surface of the substrate based on information upon a characteristic of a surface processing to be performed on the substrate by a post-processing apparatus which is configured to perform a post-processing after a substrate processing by the substrate processing apparatus.

Abstract: A substrate processing apparatus 10 includes processing units 16 each configured to process a wafer W; tanks 102 and 202 each configured to store a processing liquid; processing liquid supply units 103 and 203 each configured to supply the processing liquid into the processing unit 16; drain units 110 and 210 each configured to drain the processing liquid; supplement units 112 and 212 each configured to supplement the tanks 102 and 202 with the processing liquids; and a control unit 18. The control unit 18 is configured to perform a process job by controlling the processing liquid supply units 103 and 203 and the processing unit 16 and perform, when predetermined liquid exchange conditions are met during the performing of the process job, a liquid exchange processing in parallel with the process job by controlling the drain units 110 and 210 and the supplement units 112 and 212.

Abstract: The apparatus comprises a first coupler configured to receive two output signals, having 180° phase difference, outputted from a first differential generator as two input signals, and output a first voltage signal generated by adding the two input signals and a second voltage signal corresponding to subtraction of the two input signals, a second coupler configured to receive two output signals, having 180° phase difference, outputted from a second differential generator as two input signals, and output a third voltage signal generated by adding the two input signals and a fourth voltage signal corresponding to subtraction of the two input signals, a coupling network connected to the first differential generator and the second differential generator and a third coupler configured to output a signal generated by adding the voltage signal outputted from the first coupler and corresponding voltage signal outputted from the second coupler.

Abstract: The apparatus comprises a first coupler configured to receive two output signals, having 180° phase difference, outputted from a first differential generator as two input signals, and output a first voltage signal generated by adding the two input signals and a second voltage signal corresponding to subtraction of the two input signals, a second coupler configured to receive two output signals, having 180° phase difference, outputted from a second differential generator as two input signals, and output a third voltage signal generated by adding the two input signals and a fourth voltage signal corresponding to subtraction of the two input signals, a coupling network connected to the first differential generator and the second differential generator and a third coupler configured to output a signal generated by adding the voltage signal outputted from the first coupler and corresponding voltage signal outputted from the second coupler.

Abstract: An oscillator for high-frequency signal generation is disclosed. Provided according to the present invention is an oscillator for high-frequency signal generation comprising: a first transistor comprising a first collector for receiving a power supply voltage from a load, a first base connected to a ground, and a first emitter connected to the first base; and a second transistor comprising a second collector for receiving a power supply voltage from the load, a second base connected to a ground, and a second emitter connected to the second base, the oscillator having a common-base cross-coupled structure in which the first collector and the second emitter are cross-coupled and the second collector and the first emitter are cross-coupled.

Abstract: An oscillator for high-frequency signal generation is disclosed. Provided according to the present invention is an oscillator for high-frequency signal generation comprising: a first transistor comprising a first collector for receiving a power supply voltage from a load, a first base connected to a ground, and a first emitter connected to the first base; and a second transistor comprising a second collector for receiving a power supply voltage from the load, a second base connected to a ground, and a second emitter connected to the second base, the oscillator having a common-base cross-coupled structure in which the first collector and the second emitter are cross-coupled and the second collector and the first emitter are cross-coupled.

Abstract: A substrate processing apparatus comprises: a substrate holding unit configured to hold and rotate a substrate; an etching unit configured to etch a surface of a substrate by discharging a processing liquid to the substrate rotated by the substrate holding unit; and a control unit configured to control an etching amount by the etching unit. In the substrate processing apparatus, the control unit controls an etching amount at each position on the surface of the substrate based on information upon a characteristic of a surface processing to be performed on the substrate by a post-processing apparatus which is configured to perform a post-processing after a substrate processing by the substrate processing apparatus.