Abstract: An anti-reflection film includes a substrate; a first layer, comprising a metal oxide film, disposed on the substrate; and a second layer, comprising a fluorinated organic thin film having pores, disposed on the first layer.

Abstract: A substrate processing apparatus includes: a substrate holding unit configured to hold and rotate a substrate; an etching unit configured to etch a surface of a substrate by discharging a processing liquid to the substrate rotated by the substrate holding unit; and a control unit configured to control an etching amount by the etching unit. In the substrate processing apparatus, the control unit controls an etching amount at each position on the surface of the substrate based on information upon a characteristic of a surface processing to be performed on the substrate by a post-processing apparatus which is configured to perform a post-processing after a substrate processing by the substrate processing apparatus.

Abstract: A lens includes a lens unit, an uneven layer formed on at least a portion of a surface of the lens unit, a buffer layer covering the uneven layer and having a shape conforming to an uneven surface of the uneven layer, and a water-repellent layer covering the buffer layer.

Abstract: A substrate processing apparatus 10 includes processing units 16 each configured to process a wafer W; tanks 102 and 202 each configured to store a processing liquid; processing liquid supply units 103 and 203 each configured to supply the processing liquid into the processing unit 16; drain units 110 and 210 each configured to drain the processing liquid; supplement units 112 and 212 each configured to supplement the tanks 102 and 202 with the processing liquids; and a control unit 18. The control unit 18 is configured to perform a process job by controlling the processing liquid supply units 103 and 203 and the processing unit 16 and perform, when predetermined liquid exchange conditions are met during the performing of the process job, a liquid exchange processing in parallel with the process job by controlling the drain units 110 and 210 and the supplement units 112 and 212.

Abstract: A pellicle for extreme ultraviolet lithography includes a pellicle part configured to include a center layer and a reinforcing layer. The center layer essentially contains silicon (Si), and additionally contains at least one material of zirconium (Zr), zinc (Zn), ruthenium (Ru), and molybdenum (Mo). The reinforcing layer is made of a material containing at least one of silicon (Si), boron (B), zirconium (Zr), nitrogen (N), carbon (C), and oxygen (O). A thickness of the pellicle is minimized, and as a result, the pellicle has excellent mechanical, thermal, and chemical properties while maintaining high transmittance to EUV exposure light.

Abstract: Disclosed is a pellicle for extreme ultraviolet (EUV) lithography, with a core layer formed on a pellicle frame, the core layer comprising: a first layer; and a second layer. The first layer includes silicon. The second layer includes one among a metal silicide that has silicon with metal, a silicon compound that has silicon with a light element, and a metal silicide compound that has silicon with metal and a light element. With this, the pellicle is improved in mechanical, thermal and chemical stability with minimum loss of optical characteristics.

Abstract: A substrate processing apparatus includes: a substrate holding unit configured to hold and rotate a substrate; an etching unit configured to etch a surface of a substrate by discharging a processing liquid to the substrate rotated by the substrate holding unit; and a control unit configured to control an etching amount by the etching unit. In the substrate processing apparatus, the control unit controls an etching amount at each position on the surface of the substrate based on information upon a characteristic of a surface processing to be performed on the substrate by a post-processing apparatus which is configured to perform a post-processing after a substrate processing by the substrate processing apparatus.

Abstract: A substrate processing apparatus 10 includes processing units 16 each configured to process a wafer W; tanks 102 and 202 each configured to store a processing liquid; processing liquid supply units 103 and 203 each configured to supply the processing liquid into the processing unit 16; drain units 110 and 210 each configured to drain the processing liquid; supplement units 112 and 212 each configured to supplement the tanks 102 and 202 with the processing liquids; and a control unit 18. The control unit 18 is configured to perform a process job by controlling the processing liquid supply units 103 and 203 and the processing unit 16 and perform, when predetermined liquid exchange conditions are met during the performing of the process job, a liquid exchange processing in parallel with the process job by controlling the drain units 110 and 210 and the supplement units 112 and 212.

Abstract: The apparatus comprises a first coupler configured to receive two output signals, having 180° phase difference, outputted from a first differential generator as two input signals, and output a first voltage signal generated by adding the two input signals and a second voltage signal corresponding to subtraction of the two input signals, a second coupler configured to receive two output signals, having 180° phase difference, outputted from a second differential generator as two input signals, and output a third voltage signal generated by adding the two input signals and a fourth voltage signal corresponding to subtraction of the two input signals, a coupling network connected to the first differential generator and the second differential generator and a third coupler configured to output a signal generated by adding the voltage signal outputted from the first coupler and corresponding voltage signal outputted from the second coupler.

Abstract: The apparatus comprises a first coupler configured to receive two output signals, having 180° phase difference, outputted from a first differential generator as two input signals, and output a first voltage signal generated by adding the two input signals and a second voltage signal corresponding to subtraction of the two input signals, a second coupler configured to receive two output signals, having 180° phase difference, outputted from a second differential generator as two input signals, and output a third voltage signal generated by adding the two input signals and a fourth voltage signal corresponding to subtraction of the two input signals, a coupling network connected to the first differential generator and the second differential generator and a third coupler configured to output a signal generated by adding the voltage signal outputted from the first coupler and corresponding voltage signal outputted from the second coupler.

Abstract: An oscillator for high-frequency signal generation is disclosed. Provided according to the present invention is an oscillator for high-frequency signal generation comprising: a first transistor comprising a first collector for receiving a power supply voltage from a load, a first base connected to a ground, and a first emitter connected to the first base; and a second transistor comprising a second collector for receiving a power supply voltage from the load, a second base connected to a ground, and a second emitter connected to the second base, the oscillator having a common-base cross-coupled structure in which the first collector and the second emitter are cross-coupled and the second collector and the first emitter are cross-coupled.

Abstract: An oscillator for high-frequency signal generation is disclosed. Provided according to the present invention is an oscillator for high-frequency signal generation comprising: a first transistor comprising a first collector for receiving a power supply voltage from a load, a first base connected to a ground, and a first emitter connected to the first base; and a second transistor comprising a second collector for receiving a power supply voltage from the load, a second base connected to a ground, and a second emitter connected to the second base, the oscillator having a common-base cross-coupled structure in which the first collector and the second emitter are cross-coupled and the second collector and the first emitter are cross-coupled.

Abstract: A substrate processing apparatus comprises: a substrate holding unit configured to hold and rotate a substrate; an etching unit configured to etch a surface of a substrate by discharging a processing liquid to the substrate rotated by the substrate holding unit; and a control unit configured to control an etching amount by the etching unit. In the substrate processing apparatus, the control unit controls an etching amount at each position on the surface of the substrate based on information upon a characteristic of a surface processing to be performed on the substrate by a post-processing apparatus which is configured to perform a post-processing after a substrate processing by the substrate processing apparatus.