Abstract: An electronic device is provided, the electronic device including a communication circuit, a battery, and a processor, and the processor is configured to: obtain a strength of a communication signal received by the communication circuit; determine a magnitude of power for charging the battery based on the strength of the communication signal; and charge the battery with power of the determined magnitude.

Abstract: An electronic device is provided, the electronic device including a communication circuit, a battery, and a processor, and the processor is configured to: obtain a strength of a communication signal received by the communication circuit; determine a magnitude of power for charging the battery based on the strength of the communication signal; and charge the battery with power of the determined magnitude.

Abstract: A process chamber used in the manufacture of a semiconductor device for etching a material layer on a semiconductor wafer includes an electrostatic chuck for holding the semiconductor wafer, and an annular edge ring which surrounds the side of the semiconductor wafer on the electrostatic chuck to prevent the semiconductor wafer from departing from its original position. The annular edge ring has a first side which faces the side of the semiconductor wafer and contacts firmly with the side of the semiconductor wafer.

Abstract: A process chamber used in the manufacture of a semiconductor device for etching a material layer on a semiconductor wafer includes an electrostatic chuck for holding the semiconductor wafer, and an annular edge ring which surrounds the side of the semiconductor wafer on the electrostatic chuck to prevent the semiconductor wafer from departing from its original position. The annular edge ring has a first side which faces the side of the semiconductor wafer and contacts firmly with the side of the semiconductor wafer.

Abstract: A process chamber used in the manufacture of a semiconductor device for etching a material layer on a semiconductor wafer includes an electrostatic chuck for holding the semiconductor wafer, and an annular edge ring which surrounds the side of the semiconductor wafer on the electrostatic chuck to prevent the semiconductor wafer from departing from its original position. The annular edge ring has a first side which faces the side of the semiconductor wafer and contacts firmly with the side of the semiconductor wafer.

Abstract: A process chamber used in the manufacture of a semiconductor device for etching a material layer on a semiconductor wafer includes an electrostatic chuck for holding the semiconductor wafer, and an annular edge ring which surrounds the side of the semiconductor wafer on the electrostatic chuck to prevent the semiconductor wafer from departing from its original position. The annular edge ring has a first side which faces the side of the semiconductor wafer and contacts firmly with the side of the semiconductor wafer.

Abstract: A process chamber used in the manufacture of a semiconductor device for etching a material layer on a semiconductor wafer includes an electrostatic chuck for holding the semiconductor wafer, and an annular edge ring which surrounds the side of the semiconductor wafer on the electrostatic chuck to prevent the semiconductor wafer from departing from its original position. The annular edge ring has a first side which faces the side of the semiconductor wafer and contacts firmly with the side of the semiconductor wafer.

Abstract: A process chamber used in the manufacture of a semiconductor device for etching a material layer on a semiconductor wafer includes an electrostatic chuck for holding the semiconductor wafer, and an annular edge ring which surrounds the side of the semiconductor wafer on the electrostatic chuck to prevent the semiconductor wafer from departing from its original position. The annular edge ring has a first side which faces the side of the semiconductor wafer and contacts firmly with the side of the semiconductor wafer.

Abstract: An annular ring shaped baffle plate disposed between a process chamber and a vacuum chamber of a dry etching apparatus. A plurality of slits are formed radially along the annular ring and extend from a top surface of the annular ring to a bottom surface of the annular ring. The slits are circumferentially spaced from each other, and each of the slits has an upper section that is tapered and a lower section that has a constant width. Alternatively, the slits may be replaced by a plurality of discharging regions formed in the annular ring, with the discharging regions having a circumferential width that is greater than a radial length.