Abstract: The present invention relates to a long-acting exendin-4 in which an albumin binding domain (ABD) and an anti-FcRn affibody are fused to exendin-4, and a use thereof. A long-acting exendin-4 according to the present invention has an in vivo half-life that is significantly increased over that of exendin-4, which is conventionally used as an agent for treating diabetes, and resultantly acts as a diabetes therapeutic agent, which is a conventional use of exendin-4, and also exhibits both an effect of treating other metabolic diseases and diabetes complications, such as obesity and fatty liver, and an effect of alleviating cognitive impairment caused by metabolic diseases.

Abstract: A method for diagnosing mild cognitive impairment according to an embodiment of the present disclosure includes obtaining a sample from a subject to be diagnosed, and measuring a level of tonicity-responsible enhancer binding protein (TonEBP) in the sample by using TonEBP antibody to determine if the measured level of the TonEBP is above a predetermined level. The measuring may further includes measuring a level of lipocalin-2 (LCN2) in the sample by using LCN2 antibody to determine if the measured level of the LCN2 is above a predetermined level.

Abstract: At least one example embodiment provides a method for transferring a request in a storage device. The method includes generating an asynchronous command completion that corresponds to an asynchronous event request command and has a wall clock time request, receiving a set features command having a timestamp, the set features command corresponding to the asynchronous command completion, and updating the wall clock time using the timestamp.

Abstract: A semiconductor device includes a memory cell array including a first memory region and a second memory region; a plurality of register sets for storing a plurality of parameter sets; and a control logic circuit configured to, activate a first register set among the plurality of register sets in response to a selection signal, and perform an access operation on the first memory region using a parameter set stored in an activated register set from among the plurality of register sets.

Abstract: Fast reuse memory block detection methods and memory block management methods using the same are provided. A fast reuse memory block detection method may include selecting a memory block from memory blocks included in a nonvolatile memory device as a reference block at an initially set period, managing one of an erase time and a program time of the reference block, and determining whether other memory blocks are fast reuse memory blocks, based on a use period that is determined according to the managed one of the erase time and the program time of the reference block.

Abstract: Fast reuse memory block detection methods and memory block management methods using the same are provided. A fast reuse memory block detection method may include selecting a memory block from memory blocks included in a nonvolatile memory device as a reference block at an initially set period, managing one of an erase time and a program time of the reference block, and determining whether other memory blocks are fast reuse memory blocks, based on a use period that is determined according to the managed one of the erase time and the program time of the reference block.

Abstract: At least one example embodiment provides a method for transferring a request in a storage device. The method includes generating an asynchronous command completion that corresponds to an asynchronous event request command and has a wall clock time request, receiving a set features command having a timestamp, the set features command corresponding to the asynchronous command completion, and updating the wall clock time using the timestamp.

Abstract: A semiconductor device includes a memory cell array including a first memory region and a second memory region; a plurality of register sets for storing a plurality of parameter sets; and a control logic circuit configured to, activate a first register set among the plurality of register sets in response to a selection signal, and perform an access operation on the first memory region using a parameter set stored in an activated register set from among the plurality of register sets.

Abstract: A method of executing a write operation in a nonvolatile memory system includes receiving a write command indicating the write operation and write data associated with the write operation, and determining a selected merge size for use by a merge operation responsive to the write command by determining a number of free blocks and then determining a selected free block level (FBL) from among a plurality of FBLs in accordance with the number of free blocks.

Abstract: A coupling apparatus presses conical members having curved surfaces in a direction perpendicular to reinforcing bars by using hydraulic pressure, thereby considerably reducing working time for coupling reinforcing bars, completely securing the reinforcing bars and increasing compressive and bending strength. It is possible to stably carry force from the conical members through external force dispersion medium members to reinforcing bar securing members. Accordingly, there is a structural advantage of effectively preventing the displacement and the loosening of the coupled reinforcing bars.

Abstract: A method for operating the 3D NAND device includes providing first and second dies and initial read levels for the first and second dies, changing the initial read level for the first die to a first read level based on a first offset that is calculated in consideration of elapsed time from a time point when a program for the first die is completed, changing the initial read level for the second die to a second read level based on a second offset that is calculated in consideration of elapsed time from a time point when a program for the second die is completed, and reading data stored in the first die using the first read level or reading data stored in the second die using the second read level.

Abstract: Disclosed is a coupling apparatus that presses conical members having curved surfaces in a direction perpendicular to reinforcing bars by using hydraulic pressure, thereby considerably reducing working time for coupling reinforcing bars, completely securing the reinforcing bars and increasing compressive and bending strength. It is possible to stably carry force from the conical members through external force dispersion medium members to reinforcing bar securing members. Accordingly, there is a structural advantage of effectively preventing the displacement and the loosening of the coupled reinforcing bars.

Abstract: A method of executing a write operation in a nonvolatile memory system includes receiving a write command indicating the write operation and write data associated with the write operation, and determining a selected merge size for use by a merge operation responsive to the write command by determining a number of free blocks and then determining a selected free block level (FBL) from among a plurality of FBLs in accordance with the number of free blocks.

Abstract: A reading method of a flash memory, the reading method including: sensing hard data of a first target page by using a first hard read voltage; and generating soft data of the first target page by using at least one pair of, that is, two, first soft read voltages whose voltage levels are different from a voltage level of the first hard read voltage, while the flash memory performs a first operation on the hard data.

Abstract: Disclosed is a method of executing a write operation in a nonvolatile memory system. The method includes receiving a write command indicating the write operation and write data associated with the write operation, and determining a selected merge size for use by a merge operation responsive to the write command by determining a number of free blocks and then determining a selected free block level (FBL) from among a plurality of FBLs in accordance with the number of free blocks.

Abstract: A reading method of a flash memory, the reading method including: sensing hard data of a first target page by using a first hard read voltage; and generating soft data of the first target page by using at least one pair of, that is, two, first soft read voltages whose voltage levels are different from a voltage level of the first hard read voltage, while the flash memory performs a first operation on the hard data.

Abstract: Disclosed is a method of executing a write operation in a nonvolatile memory system. The method includes receiving a write command indicating the write operation and write data associated with the write operation, and determining a selected merge size for use by a merge operation responsive to the write command by determining a number of free blocks and then determining a selected free block level (FBL) from among a plurality of FBLs in accordance with the number of free blocks.

Abstract: Provided is a power control method in which a remaining battery time of a portable device can be ensured, and a portable device using the method. The power control method includes receiving externally a requested time-of-use and a type of one or more application programs to be executed; computing an estimated amount of power consumption when the application programs are executed for the requested time-of-use; measuring a remaining amount of power within the portable device; determining operation modes of elements of the portable device by using the estimated amount of power consumption and the remaining amount of power; and controlling operations of the elements according to the determined operation modes, in which the portable device allows a user to execute the application programs for the time-of-use requested by the user.

Abstract: The present invention relates to a diversity receiver and, more particularly, to a differential amplitude detection diversity receiver employing MRC and a method of receiving signals using the same, calculating the distances between the amplitude ratios of signals received at each antenna and each amplitude candidate value and multiplying the distances by the amplitudes of signals currently received at each antenna.