Abstract: A phase-change recording film with stable crystallization rate and a composite target for producing the film are composed of 10 to 50 atomic percent of phase-change material containing Te or Sb and 50 to 90 atomic percent of dielectric material. Another target for producing the film is composed of dielectric material and a phase-change material containing Te or Sb attached to the dielectric material. A co-sputtering process for producing the film uses a target made of dielectric material and a target made of phase-change material containing Te or Sb to co-sputter. Because the crystallization rate of the phase-change recording film does not change as the thickness of phase-change recording film varies, manufacturing the phase-change recording film does not require to be precisely controlled unduly.