Abstract: The present invention relates to a pharmaceutical composition for preventing or treating COVID-19 diseases, comprising an organic solvent extract of Justicia procumbens as an effective ingredient, a pharmaceutical composition for preventing or treating COVID-19 diseases, comprising justicidin-A as an effective ingredient, a pharmaceutical composition for preventing or treating COVID-19 diseases, comprising justicidin-B as an effective ingredient, or a pharmaceutical composition for preventing or treating COVID-19 diseases, comprising 6? hydroxyl justicidin-B as an effective ingredient, and a food composition thereof for preventing or ameliorating COVID-19 diseases. According to the present invention, an anhydrous ethanol extract of Justicia procumbens, justicidin-A, justicidin-B, and 6? hydroxyl justicidin-B effectively inhibit SARS-CoV-2 virus, and thus may effectively prevent, treat, or ameliorate diseases caused by SARS-CoV-2 virus.

Abstract: The present invention relates to a pharmaceutical composition for preventing or treating respiratory disease, which comprises an alcohol or organic solvent extract of Justicia procumbens L. as an active ingredient, and to a pharmaceutical composition for preventing or treating respiratory disease, which comprises an alcohol or organic solvent extract of Justicia procumbens L., the extract comprising any one or more of justicidin A, justicidin B, justicidin C and phyllamyricin C, and also to a food composition for preventing or treating respiratory disease, which comprises the alcohol or organic solvent extract. The composition comprising the Justicia procumbens L. extract according to the present invention may inhibit abnormal overproliferation of splenocytes, may inhibit the secretion of allergic inflammatory cytokines, and exhibits an expectorant effect and an airway constriction inhibitory effect. Thus, it may effectively prevent, treat or improve respiratory disease.

Abstract: The present invention relates to a pharmaceutical composition, food composition and cosmetic composition for preventing, treating, or improving allergic diseases comprising extract or fraction of a plant of the Justicia genus as an active ingredient. The extract or a fraction of a plant of the Justicia genus according to the present invention can inhibit IgE antibody secretion and the degranulation of mast cells and basophils, and exhibits an excellent anti-allergic effect, and thus can effectively prevent, treat, or improve allergic diseases.

Abstract: The present invention relates to a pharmaceutical composition for preventing or treating respiratory disease, which comprises an alcohol or organic solvent extract of Justicia procumbens L. as an active ingredient, and to a pharmaceutical composition for preventing or treating respiratory disease, which comprises an alcohol or organic solvent extract of Justicia procumbens L., the extract comprising any one or more of justicidin A, justicidin B, justicidin C and phyllamyricin C, and also to a food composition for preventing or treating respiratory disease, which comprises the alcohol or organic solvent extract. The composition comprising the Justicia procumbens L. extract according to the present invention may inhibit abnormal overproliferation of splenocytes, may inhibit the secretion of allergic inflammatory cytokines, and exhibits an expectorant effect and an airway constriction inhibitory effect. Thus, it may effectively prevent, treat or improve respiratory disease.

Abstract: The present invention relates to a pharmaceutical composition, food composition and cosmetic composition for preventing, treating, or improving allergic diseases comprising extract or fraction of a plant of the Justicia genus as an active ingredient. The extract or a fraction of a plant of the Justicia genus according to the present invention can inhibit IgE antibody secretion and the degranulation of mast cells and basophils, and exhibits an excellent anti-allergic effect, and thus can effectively prevent, treat, or improve allergic diseases.

Abstract: A method of fabricating a semiconductor device may include: forming a field region defining an active region in a substrate; forming a gate trench in which the active and field regions are partially exposed; forming a gate insulating layer on a surface of the active region; conformally forming a gate barrier layer including metal on the gate insulating layer and partially exposed field region; forming a gate electrode layer including metal on the gate barrier layer; and/or forming a gate capping layer. Forming the gate insulating layer may include forming a first gate oxide layer by primarily oxidizing the active region's surface, and forming a second gate oxide layer between the active region's surface and the first gate oxide layer by secondarily oxidizing the active region's surface. The gate capping layer may be in contact with the gate insulating layer, gate barrier layer, and/or gate electrode layer.

Abstract: A semiconductor fabrication apparatus and a method of fabricating a semiconductor device using the same performs semiconductor etching and deposition processes at an edge of a semiconductor substrate after disposing the semiconductor substrate at a predetermined place in the semiconductor fabrication apparatus. The semiconductor fabrication apparatus has lower, middle and upper electrodes sequentially stacked. The semiconductor substrate is disposed on the middle electrode. Semiconductor etching and deposition processes are performed on the semiconductor substrate in the semiconductor fabrication apparatus. The semiconductor fabrication apparatus forms electrical fields along an edge of the middle electrode during performance of the semiconductor etching and deposition processes.

Abstract: Disclosed is a pharmaceutical composition and health food comprising herb extracts of one or more herbs selected from the group consisting of Puerariae Radix, Bombycis corpus and Araliae Continentalis Radix. The herb medicine of this invention comprising a single or mixed composition may be useful for the prevention and treatment of renal diseases as well as improvement of renal functions.

Abstract: A method of fabricating a semiconductor device may include forming active and field regions in a substrate; forming a gate trench in which the active and field regions are exposed; forming a gate insulating layer on a surface of the exposed active region, wherein forming the gate insulating layer includes forming a first gate oxide layer by primarily oxidizing the surface of the active region, and forming a second gate oxide layer between the surface of the active region and the first gate oxide layer by secondarily oxidizing the surface of the active region; conformally forming a gate barrier layer on the gate insulating layer and the exposed field region; forming a gate electrode layer on the gate barrier layer; and forming a gate capping layer in contact with the gate insulating layer, the gate barrier layer, and the gate electrode layer in the gate trench.

Abstract: A semiconductor fabrication apparatus and a method of fabricating a semiconductor device using the same performs semiconductor etching and deposition processes at an edge of a semiconductor substrate after disposing the semiconductor substrate at a predetermined place in the semiconductor fabrication apparatus. The semiconductor fabrication apparatus has lower, middle and upper electrodes sequentially stacked. The semiconductor substrate is disposed on the middle electrode. Semiconductor etching and deposition processes are performed on the semiconductor substrate in the semiconductor fabrication apparatus. The semiconductor fabrication apparatus forms electrical fields along an edge of the middle electrode during performance of the semiconductor etching and deposition processes.

Abstract: A semiconductor fabrication apparatus and a method of fabricating a semiconductor device using the same performs semiconductor etching and deposition processes at an edge of a semiconductor substrate after disposing the semiconductor substrate at a predetermined place in the semiconductor fabrication apparatus. The semiconductor fabrication apparatus has lower, middle and upper electrodes sequentially stacked. The semiconductor substrate is disposed on the middle electrode. Semiconductor etching and deposition processes are performed on the semiconductor substrate in the semiconductor fabrication apparatus. The semiconductor fabrication apparatus forms electrical fields along an edge of the middle electrode during performance of the semiconductor etching and deposition processes.

Abstract: Disclosed is a pharmaceutical composition and health food comprising herb extracts of one or more herbs selected from the group consisting of Puerariae Radix, Bombycis corpus and Araliae Continentalis Radix. The herb medicine of this invention comprising a single or mixed composition may be useful for the prevention and treatment of renal diseases as well as improvement of renal functions.

Abstract: A highly reliable semiconductor device and a method fabricating the same are provided, the semiconductor device having a low resistance electrode structure. The semiconductor device includes an interlayer insulation film formed on a semiconductor substrate. A storage node electrode is formed on the interlayer insulation film. A protection film is formed on the storage node electrode and includes a nitrided metal film. A dielectric film overlies the protection film. A plate electrode is formed on the dielectric film.

Abstract: This invention relates to a pharmaceutical composition and health food comprising herb extracts of one or more herbs selected from the group consisting of Puerariae Radix, Bombycis corpus and Araliae Continentalis Radix. The herb medicine of this invention comprising a single or mixed composition may be useful for the prevention and treatment of renal diseases as well as improvement of renal functions.

Abstract: A semiconductor fabrication apparatus and a method of fabricating a semiconductor device using the same performs semiconductor etching and deposition processes at an edge of a semiconductor substrate after disposing the semiconductor substrate at a predetermined place in the semiconductor fabrication apparatus. The semiconductor fabrication apparatus has lower, middle and upper electrodes sequentially stacked. The semiconductor substrate is disposed on the middle electrode. Semiconductor etching and deposition processes are performed on the semiconductor substrate in the semiconductor fabrication apparatus. The semiconductor fabrication apparatus forms electrical fields along an edge of the middle electrode during performance of the semiconductor etching and deposition processes.

Abstract: In a method of manufacturing a semiconductor device including a capacitor, a first mold layer is formed on a semiconductor substrate. The first mold layer is partially etched to form a first mold layer pattern including an opening for a capacitor. A first lower electrode layer is formed on the first mold layer pattern. A second lower electrode layer including a plurality of first pores is formed on the first lower electrode layer and in the opening. Upper portions of the first lower electrode layer and the second lower electrode layer are removed to form a first lower electrode and a second lower electrode in the opening. A dielectric layer and an upper electrode are successively formed on the first lower electrode and the second lower electrode. Therefore, a capacitor having an enhanced capacitance may be obtained.

Abstract: A highly reliable semiconductor device and a method fabricating the same are provided, the semiconductor device having a low resistance electrode structure. The semiconductor device includes an interlayer insulation film formed on a semiconductor substrate. A storage node electrode is formed on the interlayer insulation film. A protection film is formed on the storage node electrode and includes a nitrided metal film. A dielectric film overlies the protection film. A plate electrode is formed on the dielectric film.

Abstract: Example embodiments of the present invention relate to a semiconductor device and a method of fabricating the same. Other example embodiments of the present invention relate to a semiconductor device having a metal silicide layer of a substrate and a barrier metal layer constituting a line layer and a method of fabricating the same. The semiconductor device may include a bar-type contact structure (e.g., a contact surface with an active region is bar shaped) and a dot-type contact structure (e.g., the contact surface is dot shaped). The bar-type contact structure may have a larger contact area with the active region. The bar-type contact structure may retard or prevent an ohmic contact layer, which is formed by the chemical combination of a barrier metal layer and a substrate between which a semiconductor layer is interposed, from being extended outside source/drain regions or being electrically shorted to a gate electrode.

Abstract: In a method of manufacturing a semiconductor device including a capacitor, a first mold layer is formed on a semiconductor substrate. The first mold layer is partially etched to form a first mold layer pattern including an opening for a capacitor. A first lower electrode layer is formed on the first mold layer pattern. A second lower electrode layer including a plurality of first pores is formed on the first lower electrode layer and in the opening. Upper portions of the first lower electrode layer and the second lower electrode layer are removed to form a first lower electrode and a second lower electrode in the opening. A dielectric layer and an upper electrode are successively formed on the first lower electrode and the second lower electrode. Therefore, a capacitor having an enhanced capacitance may be obtained.