Abstract: A display device: a substrate including a first display area and a second display area; a signal line which overlaps the first display area and the second display area; and a common electrode which overlaps the first display area and the second display area, where the first display area includes a first pixel area, the second display area includes a second pixel area and a transmitting area, the transmitting area includes a first transmitting area and a second transmitting area, which have different transmittances from each other, the common electrode overlaps the first pixel area, the second pixel area and the second transmitting area, and in the second transmitting area, at least a part of the signal line and the common electrode overlap each other.

Abstract: A thin film transistor array panel device comprises: a base substrate; a barrier layer disposed over the base substrate and comprising a plurality of transparent material layers; and an array of thin film transistors disposed over the barrier layer. A difference between a refractive index of the barrier layer and a refractive index of the base substrate may be within about 6%. The transparent material layers may be arranged such that the transparent material layers having compressive residual stress and the transparent material layers having tensile residual stress are alternately stacked. Each of the transparent material layers may comprise silicon oxynitride (SiON).

Abstract: An organic light emitting diode (OLED) display includes a first electrode, a pixel defining layer that at least partially exposes the first electrode, an organic light emitting layer on the first electrode, a thin-film encapsulation layer on the organic light emitting layer, and a light shielding member on the thin-film encapsulation the light shielding member overlapping the pixel defining layer. The organic light emitting layer includes a main area not overlapping the pixel defining layer and a sub area overlapping the pixel defining layer. The main area includes an open portion not overlapping the light shielding member and a shadow portion around the open portion overlapping the light shielding member.

Abstract: A transparent organic light emitting display device may include a transparent base substrate, a semiconductor device disposed on the transparent base substrate, a display structure electrically connected to the semiconductor device, and a protection layer including a blue dye disposed on the display structure. The protection layer may improve the transparency of the transparent base substrate by calibrating discoloration of the transparent base substrate. Thus, the transparent display device including the protection layer may ensure an enhanced transparency. Further, the transparent display device may have an enhanced mechanical strength and an increased heat resistance because of the transparent base substrate.

Abstract: A display device and a method for fabricating the same. The display device includes a substrate including a circuit layer and a first pad unit; an auxiliary substrate disposed below the substrate and comprising a driving circuit and a second pad unit; a light-emitting unit disposed on the circuit layer; and a connection electrode in contact with a side surface of the substrate and electrically connecting the first pad unit with the second pad unit. The method includes forming a circuit layer and a first pad unit on a first surface of a substrate; forming a driving circuit and a second pad unit on a fourth surface of an auxiliary substrate; and attaching a second surface of the substrate opposite the first surface to a third surface of the auxiliary substrate opposite the fourth surface.

Abstract: A display device may include a light emitting element, a buffer layer, a gate insulation layer, and a switching element. A refractive index of the gate insulation layer may be equal to a refractive index of the buffer layer. The switching element may be electrically connected to the light emitting element and may include an active layer and a gate electrode. The active layer may be positioned between the buffer layer and the gate insulation layer and may directly contact at least one of the buffer layer and the gate insulation layer. The gate insulation layer may be positioned between the active layer and the gate electrode and may directly contact at least one of the active layer and the gate electrode.

Abstract: A transparent organic light emitting display device may include a transparent base substrate, a semiconductor device disposed on the transparent base substrate, a display structure electrically connected to the semiconductor device, and a protection layer including a blue dye disposed on the display structure. The protection layer may improve the transparency of the transparent base substrate by calibrating discoloration of the transparent base substrate. Thus, the transparent display device including the protection layer may ensure an enhanced transparency. Further, the transparent display device may have an enhanced mechanical strength and an increased heat resistance because of the transparent base substrate.

Abstract: A thin film transistor array panel device comprises: a base substrate; a barrier layer disposed over the base substrate and comprising a plurality of transparent material layers; and an array of thin film transistors disposed over the barrier layer. A difference between a refractive index of the barrier layer and a refractive index of the base substrate may be within about 6%. The transparent material layers may be arranged such that the transparent material layers having compressive residual stress and the transparent material layers having tensile residual stress are alternately stacked. Each of the transparent material layers may comprise silicon oxynitride (SiON).

Abstract: A thin film transistor array panel includes a substrate, a first gate electrode on the substrate, a semiconductor layer on the first gate electrode, the semiconductor layer including a drain region, a source region, a lightly doped drain (LDD) region, and a channel region, a second gate electrode on the semiconductor layer, the first gate electrode and the second gate electrode each overlapping the channel region, a control gate electrode that overlaps the LDD region, and a source electrode and a drain electrode respectively connected with the source region and the drain region of the semiconductor layer.

Abstract: A display device may include a light emitting element, a buffer layer, a gate insulation layer, and a switching element. A refractive index of the gate insulation layer may be equal to a refractive index of the buffer layer. The switching element may be electrically connected to the light emitting element and may include an active layer and a gate electrode. The active layer may be positioned between the buffer layer and the gate insulation layer and may directly contact at least one of the buffer layer and the gate insulation layer. The gate insulation layer may be positioned between the active layer and the gate electrode and may directly contact at least one of the active layer and the gate electrode.

Abstract: A transparent display substrate, a transparent display device, and a method of manufacturing a transparent display device, the substrate including a base substrate including a pixel area and a transmission area; a pixel circuit on the pixel area of the base substrate; an insulation layer covering the pixel circuit on the base substrate; a pixel electrode selectively disposed on the pixel area of the base substrate, the pixel electrode being electrically connected to the pixel circuit at least partially through the insulation layer; and a transmitting layer structure selectively disposed on the transmission area of the base substrate, the transmitting layer structure including at least an inorganic material, the inorganic material consisting essentially of silicon oxynitride.

Abstract: A transparent display substrate, a transparent display device, and a method of manufacturing a transparent display device, the substrate including a base substrate including a pixel area and a transmission area; a pixel circuit on the pixel area of the base substrate; an insulation layer covering the pixel circuit on the base substrate; a pixel electrode selectively disposed on the pixel area of the base substrate, the pixel electrode being electrically connected to the pixel circuit at least partially through the insulation layer; and a transmitting layer structure selectively disposed on the transmission area of the base substrate, the transmitting layer structure including at least an inorganic material, the inorganic material consisting essentially of silicon oxynitride.

Abstract: A thin film transistor array panel device comprises: a base substrate; a barrier layer disposed over the base substrate and comprising a plurality of transparent material layers; and an array of thin film transistors disposed over the barrier layer. A difference between a refractive index of the barrier layer and a refractive index of the base substrate may be within about 6%. The transparent material layers may be arranged such that the transparent material layers having compressive residual stress and the transparent material layers having tensile residual stress are alternately stacked. Each of the transparent material layers may comprise silicon oxynitride (SiON).

Abstract: A transparent display substrate, a transparent display device, and a method of manufacturing a transparent display device, the substrate including a base substrate including a pixel area and a transmission area; a pixel circuit on the pixel area of the base substrate; an insulation layer covering the pixel circuit on the base substrate; a pixel electrode selectively disposed on the pixel area of the base substrate, the pixel electrode being electrically connected to the pixel circuit at least partially through the insulation layer; and a transmitting layer structure selectively disposed on the transmission area of the base substrate, the transmitting layer structure including at least an inorganic material, the inorganic material consisting essentially of silicon oxynitride.

Abstract: A display device includes a substrate including a first area displaying an image and a second area adjacent to the first area, the second area transmitting external light, a first electrode and a second electrode disposed in the first area and overlapping each other, an emission layer disposed between the first electrode and the second electrode in the first area, a first semiconductor layer disposed in the first area, and a second semiconductor layer disposed in the second area.

Abstract: A substrate of a transparent flexible display and an organic light-emitting diode display including the same are disclosed. In one aspect, the substrate includes a first polymer film having a predetermined color and a second polymer film having an inverse opal structure formed on a surface of the first polymer film.

Abstract: A transparent display device includes a base substrate having a pixel area and a transmission area, a barrier layer disposed on the base substrate, a pixel circuit disposed in the pixel area, a display structure disposed on the pixel circuit, a transmitting structure disposed in the transmission area, an adhesive layer disposed between the base substrate and the barrier layer, and between the base substrate and the transmitting structure, and a transmitting window defined in the transmission area where the transmitting structure may include a composition including silicon oxynitride, the adhesive layer may include aluminum oxide, and the transmitting window may expose a surface of the transmitting structure.

Abstract: A substrate structure may be used in a display device. The substrate structure may include a base substrate, a transistor, and a silicon oxynitride layer. The transistor may include a semiconductor member and a gate electrode and may overlap the base substrate. The silicon oxynitride layer may directly contact at least one of the base substrate, the semiconductor member, and the gate electrode and may include (and/or contain) a hydrogen atom set. A hydrogen concentration in the silicon oxynitride layer may be greater than or equal to 1.52 atomic percent.

Abstract: A display device may include a first substrate, a lower barrier layer disposed on a rear surface of the first substrate, an upper barrier layer disposed on a front surface of the first substrate, a display structure disposed on the upper barrier layer, and a second substrate disposed on the display structure.

Abstract: A display panel includes a flexible electrochromic substrate comprising a first flexible substrate layer, a second flexible substrate layer opposing to the first flexible substrate layer and an electrochromic part disposed between the first and second flexible substrate layers and configured to discolor in response to a driving signal, a transistor layer disposed on the flexible electrochromic substrate, the transistor layer comprising a plurality of transistors and an organic light emitting diode layer disposed on the flexible electrochromic substrate on which the transistor layer is disposed, the organic light emitting diode layer comprising a plurality of organic light emitting diodes connected to the plurality of transistors.