Patents by Inventor Joo-Hoon Lee

Joo-Hoon Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of fabricating nickel etching mask
    Patent number: 6624080
    Abstract: There is provided a metal etching mask fabrication method. Chrome is first sputtered on a silica layer and a photoresist, which is thicker than the chrome layer, is deposited on the chrome layer. The photoresist layer is patterned, a first nickel is sputtered on the photoresist pattern layer and onto a first portion of the chrome layer exposed by the patterning. A second nickel layer is formed on the portions of the first nickel layer in contact with the first portion of the chrome layer by electroplating. The photoresist pattern has side walls having acute angles to prevent contact between the first nickel layer on the photoresist and the second nickel layer on the first portion of the chrome layer. The photoresist pattern layer and the first nickel layer formed on the photoresist pattern layer are removed using a solvent, and the chrome layer is removed by dry etching in plasma using a gas.
    Type: Grant
    Filed: July 17, 2001
    Date of Patent: September 23, 2003
    Assignee: Samsung Electronics Co., Ltd
    Inventors: Sun-Tae Jung, Duk-Yong Choi, Joo-Hoon Lee
  • Method of fabricating nickel etching mask
    Publication number: 20020009820
    Abstract: There is provided a metal etching mask fabrication method. Chrome is first sputtered on a silica layer and a photoresist, which is thicker than the chrome layer, is deposited on the chrome layer. The photoresist layer is patterned, a first nickel is sputtered on the photoresist pattern layer and onto a first portion of the chrome layer exposed by the patterning. A second nickel layer is formed on the portions of the first nickel layer in contact with the first portion of the chrome layer by electroplating. The photoresist pattern has side walls having acute angles to prevent contact between the first nickel layer on the photoresist and the second nickel layer on the first portion of the chrome layer. The photoresist pattern layer and the first nickel layer formed on the photoresist pattern layer are removed using a solvent, and the chrome layer is removed by dry etching in plasma using a gas.
    Type: Application
    Filed: July 17, 2001
    Publication date: January 24, 2002
    Inventors: Sun-Tae Jung, Duk-Yong Choi, Joo-Hoon Lee