Abstract: A thermoelectric module includes a first electrode, a first oxidation preventing layer, a plurality of first bonding layers containing silver (Ag), a second oxidation preventing layer, a first plating layer, a thermoelectric element, a second plating layer, a third oxidation preventing layer, a second bonding layer containing silver (Ag), a fourth oxidation preventing layer, and a second electrode.

Abstract: The present invention relates to a novel multipurpose polymer and a composition containing the same. The polymer and the composition of the present invention are very useful for preparing a semiconductor device having very good mechanical and optical properties.

Abstract: The present invention relates to a novel multipurpose polymer and a composition containing the same. The polymer and the composition of the present invention are very useful for preparing a semiconductor device having very good mechanical and optical properties.

Abstract: Disclosed are a photosensitive compound and a method of manufacturing the same. The photosensitive is composed of a naphthoquinonediazide sulfonic ester compound having at least one naphthoquinonediazide sulfoxy group, and having either at least one carboxy group with 1 to 8 carbon atoms or at least one alkoxy group with 1 to 8 carbon atoms, in one molecule.

Abstract: A compound represented by the following formula (1) is provided: wherein R1 represents a hydrogen atom, a trifluoromethyl group, an alkyl group, or an alkoxy group; and A represents a group represented by the following formula (2) or formula (3): wherein R2, R3, R4, R5 and R6 each independently represent a substituted or unsubstituted alkyl group, a substituted or unsubstituted allyl group, a substituted or unsubstituted perfluoroalkyl group, a substituted or unsubstituted benzyl group, or a substituted or unsubstituted aryl group; and two or more of R2, R3 and R4 may be linked to each other to form a saturated or unsaturated carbon ring or a saturated or unsaturated heterocyclic ring. The chemically amplified resist composition comprising a polymer compound which is produced from the compound of formula 1 according to the present invention provides a chemically amplified resist sensitive to far-ultraviolet radiation, which is represented by KrF excimer laser or ArF excimer laser.

Abstract: The present invention provides an organic anti-reflection coating composition comprising a copolymer represented by the following Formula 1, a light absorbent, a thermal acid generating agent, and a curing agent: wherein R1, R2 and R3 are each independent to each; R1 represents hydrogen or an alkyl group having 1 to 10 carbon atoms; R2 represents hydrogen, an alkyl group having 1 to 10 carbon atoms or an arylalkyl group having 1 to 20 carbon atoms; R3 is hydrogen or a methyl group; m and n are repeating units in the main chain, while m+n=1, and they have values of 0.05<m/(m+n)<0.95 and 0.05<n/(m+n)<0.95. The anti-reflection coating using the polymer of the invention has excellent adhesiveness and storage stability, and a very high dry etching rate, and exhibits excellent resolution in both C/H patterns and L/S patterns.

Abstract: The present invention provides compositions for forming an oligomer array and methods for using the same. Such a composition may include an acid stable polymer, a photoacid generator and an organic solvent and may allow for the selective attachment of oligormers at one or more desired positions on a substrate using long wavelength light.

Abstract: Disclosed are polysilazane, a method of synthesizing the polysilazane, a composition for manufacturing a semiconductor device, and a method of manufacturing a semiconductor device using the composition. The polysilazane is synthesized through a reaction, under a catalyst, between dichlorosilane, trichlorosilane, and ammonia added in a reaction solvent as a reactant. In this instance, a polystyrene conversion weight average molecular weight of the polysilazane is about 2,000 to 30,000.

Abstract: The present invention relates to a light absorbent for organic anti-reflection coating formation, and an organic anti-reflection film composition containing the same. The light absorbent for organic anti-reflection film formation according to the present invention is a compound of the following formula (1a), a compound of the following formula (1b), a mixture of compounds of the formulas (1a) and (1b): wherein X is selected from the group consisting of a substituted or unsubstituted cyclic group having 1 to 20 carbon atoms, aryl, diaryl ether, diaryl sulfide, diaryl sulfoxide and diaryl ketone; and R1 is a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, or an aryl group having 1 to 14 carbon atoms.

Abstract: Disclosed is a positive typed photosensitive composition including a polyamide derivative represented by the following Chemical Formula, and a heat-acid generator. where R1, R2, R4, and R5 independently represent a bivalent to hexavalent aryl group with at least two carbon atoms, R3 represents either a hydrogen atom or an alkyl group with 1 to 10 carbon atoms, k represents an integer of 10 to 1,000, 1 represents an integer of 1 to 1,000, n and m independently represent an integer of 0 to 2 (n+m>0), and X represents either a hydrogen atom or an aryl group with 2 to 30 carbon atoms.

Abstract: Disclosed are a photosensitive compound and a method of manufacturing the same. The photosensitive is composed of a naphthoquinonediazide sulfonic ester compound having at least one naphthoquinonediazide sulfoxy group, and having either at least one carboxy group with 1 to 8 carbon atoms or at least one alkoxy group with 1 to 8 carbon atoms, in one molecule.

Abstract: Disclosed is a positive typed photosensitive composition including a polyamide derivative being represented by where R1 and R2 independently represent a bivalent to hexavalent aryl group with at least two carbon atoms, R3 represents either a hydrogen atom or an alkyl group with 1 to 20 carbon atoms, R4 represents either an alkyl group having a linear structure or an aryl group having a linear structure, R5 represents any one of a bivalent to hexavalent aryl group with at least two carbon atoms, an alkyl group having a linear structure, and an aryl group having a linear structure, k and l independently represent an integer of 10 to 1000, n and m independently represent an integer of 0 to 2 (n+m>0), and X represents either a hydrogen atom or an aryl group with 2 to 30 carbon atoms.

Abstract: Disclosed are polysilazane, a method of synthesizing the polysilazane, a composition for manufacturing a semiconductor device, and a method of manufacturing a semiconductor device using the composition. The polysilazane is synthesized through a reaction, under a catalyst, between dichlorosilane, trichlorosilane, and ammonia added in a reaction solvent as a reactant. In this instance, a polystyrene conversion weight average molecular weight of the polysilazane is about 2,000 to 30,000.

Abstract: A compound represented by the following formula (1) is provided: wherein R1 represents a hydrogen atom, a trifluoromethyl group, an alkyl group, or an alkoxy group; and A represents a group represented by the following formula (2) or formula (3): wherein R2, R3, R4, R5 and R6 each independently represent a substituted or unsubstituted alkyl group, a substituted or unsubstituted allyl group, a substituted or unsubstituted perfluoroalkyl group, a substituted or unsubstituted benzyl group, or a substituted or unsubstituted aryl group; and two or more of R2, R3 and R4 may be linked to each other to form a saturated or unsaturated carbon ring or a saturated or unsaturated heterocyclic ring. The chemically amplified resist composition comprising a polymer compound which is produced from the compound of formula 1 according to the present invention provides a chemically amplified resist sensitive to far-ultraviolet radiation, which is represented by KrF excimer laser or ArF excimer laser.

Abstract: The present invention relates to a light absorbent for organic anti-reflection coating formation, and an organic anti-reflection film composition containing the same.

Abstract: The present invention provides an organic anti-reflection coating composition comprising a copolymer represented by the following Formula 1, a light absorbent, a thermal acid generating agent, and a curing agent: wherein R1, R2 and R3 are each independent to each; R1 represents hydrogen or an alkyl group having 1 to 10 carbon atoms; R2 represents hydrogen, an alkyl group having 1 to 10 carbon atoms or an arylalkyl group having 1 to 20 carbon atoms; R3 is hydrogen or a methyl group; m and n are repeating units in the main chain, while m+n=1, and they have values of 0.05<m/(m+n)<0.95 and 0.05<n/(m+n)<0.95. The anti-reflection coating using the polymer of the invention has excellent adhesiveness and storage stability, and a very high dry etching rate, and exhibits excellent resolution in both C/H patterns and L/S patterns.

Abstract: The present invention provides a polymer represented by the following formula 1 and a chemically amplified resist composition including the polymer, which resist composition is excellent in adhesion, storage stability and dry etch resistance, with good resolution in both C/H and L/S patterns, and provides a good pattern profile irrespective of the type of the substrate due to its good process window:

Abstract: The present invention provides norbornene-based copolymers for which one monomer is at least selected from a group consisting of norbornene and dicyclopentadiene, and the other from norbornene-based comonomers of Formula 1 shown below: In Formula 1, R1, R2 and a are defined in this specification. The present invention provides insulating elements for multi-chip packages and antireflection films for the exposure process of semiconductor fabrication using said norbornene-based copolymers. Norbornene-based copolymers according to the present invention have low dielectric constant as well as high thermal stability and excellent solubility to various organic solvents.

Abstract: A chemically amplified resist composition includes a novel polymer, a photoacid generator, and a solvent. The chemically amplified resist can form a resist pattern that is excellent in adhesiveness with a low dependency to the substrate, transparency at the far ultraviolet wavelength range such as KrF Excimer laser or ArF Excimer laser, dry etch resistance, sensitivity, resolution, and developability. In addition, the polymer contains a maximum number of saturated aliphatic rings to enhance etching resistance, and additionally includes an alkoxyalkyl acrylate monomer introduced as a solution to the problem with the conventional polyacrylate resist in regard to edge roughness of the pattern, to form a uniform edge of the pattern because the alkylalcohol compound generated together with a formaldehyde and a carboxylate compound by a deprotection reaction of the alkoxyalkyl acrylate monomer with an acid acts as a solvent or an antifoaming agent in the pattern.

Abstract: An organic light emitting display device having high transmittance with respect to external light and a method of manufacturing the same. The organic light emitting display device includes a substrate; a plurality of pixels formed on the substrate, each of the pixels including a first region that emits light and a second region that transmits external light; a plurality of thin film transistors disposed in the first region of each pixel; a plurality of first electrodes disposed in the first region of each pixel and electrically connected to the thin film transistors, respectively; a second electrode formed opposite to the plurality of first electrodes and comprising a plurality of transmission windows corresponding to the second regions; and an organic layer formed between the first electrodes and the second electrode. The transmission windows can be formed in the second electrode, that is, a cathode.