Patents by Inventor Joo Hyeong YOON

Joo Hyeong YOON has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Storage device, storage system, and method of operating the storage system
    Patent number: 11836117
    Abstract: A storage system includes a storage device having a nonvolatile memory with a first and a second physical address and a host configured to insert a first journal logical address and a first target logical address into a journal mapping table. The storage device includes a flash mapping table storing the first journal logical address mapped to the first physical address, and the first target logical address mapped to the second physical address; a circuit configured to write the first journal data to an area of the nonvolatile memory to the first physical address corresponding to the first journal logical address according to the first mapping state, based on the journaling command; and to change the first mapping state of the flash mapping table to a second mapping state in which the first target logical address is remapped to the first physical address, based on the checkpointing command.
    Type: Grant
    Filed: June 8, 2021
    Date of Patent: December 5, 2023
    Assignees: Samsung Electronics Co., Ltd., INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY
    Inventors: Joo Hyeong Yoon, Won Woo Ro, Won Seb Jeong
  • STORAGE DEVICE, STORAGE SYSTEM, AND METHOD OF OPERATING THE STORAGE SYSTEM
    Publication number: 20220083515
    Abstract: A storage system includes a storage device having a nonvolatile memory with a first and a second physical address and a host configured to insert a first journal logical address and a first target logical address into a journal mapping table. The storage device includes a flash mapping table storing the first journal logical address mapped to the first physical address, and the first target logical address mapped to the second physical address; a circuit configured to write the first journal data to an area of the nonvolatile memory to the first physical address corresponding to the first journal logical address according to the first mapping state, based on the journaling command; and to change the first mapping state of the flash mapping table to a second mapping state in which the first target logical address is remapped to the first physical address, based on the checkpointing command.
    Type: Application
    Filed: June 8, 2021
    Publication date: March 17, 2022
    Applicants: Samsung Electronics Co., Ltd., INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY
    Inventors: Joo Hyeong YOON, Won Woo RO, Won Seb JEONG