Abstract: Disclosed is a substrate drying apparatus of substrate processing apparatus including a chamber that provides a space for processing a substrate, and a fluid supply unit that supplies a process fluid to the chamber, wherein the liquid supply unit includes a supply tank in which the fluid is stored, a supply line that connects the supply tank and the chamber, a branch line branched from a first point of the supply line and connected to a second point of the supply line, and a temperature control unit that adjusts the temperature of the fluid such that the temperatures of the fluids flowing through the supply line and the branch line between the first point and the second point are different.

Abstract: Provided are an apparatus and method for treating a substrate. More particularly, an apparatus and method for treating a substrate through a supercritical process are provided. The apparatus includes: a housing having an entrance in a predetermined surface thereof and providing a space for performing a high pressure process; a support member disposed in the housing to support a substrate; a door for opening and closing the entrance; and a pressing member configured to apply a force to the door so as to close the housing during the high pressure process.

Abstract: Provided are an apparatus and method for treating a substrate. More particularly, an apparatus and method for treating a substrate through a supercritical process are provided. The apparatus includes: a housing having an entrance in a predetermined surface thereof and providing a space for performing a high pressure process; a support member disposed in the housing to support a substrate; a door for opening and closing the entrance; and a pressing member configured to apply a force to the door so as to close the housing during the high pressure process.

Abstract: Provided are an apparatus and method for treating a substrate. Specifically, provided are an apparatus and method for treating a substrate through a supercritical process. The apparatus includes: a housing providing a space for performing a process; a support member disposed in the housing to support a substrate; a supply port configured to supply a process fluid to the housing; a shield member disposed between the supply port and the support member to prevent the process fluid from being directly injected to the substrate; and an exhaust port configured to discharge the process fluid from the housing.

Abstract: Provided are an apparatus and method for treating a substrate. More particularly, an apparatus and method for treating a substrate through a supercritical process are provided. The apparatus includes a housing having an entrance in a side thereof and providing a space for performing a process, a door for opening and closing the entrance, and a support member disposed on the door to receive a substrate thereon.

Abstract: A wafer spin chuck and an etcher using the same are provided. According to an aspect of the present invention, there is provide a wafer spin chuck device comprising: a spin body which spins a wafer; and a stationary body which holds the spin body and is under the spin body with a space between the spin body and the stationary body, wherein the stationary body includes a blocking unit which blocks the space with a fluid.

Abstract: A wafer spin chuck and an etcher using the same are provided. According to an aspect of the present invention, there is provide a wafer spin chuck device comprising: a spin body which spins a wafer; and a stationary body which holds the spin body and is under the spin body with a space between the spin body and the stationary body, wherein the stationary body includes a blocking unit which blocks the space with a fluid.

Abstract: A wafer spin chuck and an etcher using the same are provided. According to an aspect of the present invention, there is provide a wafer spin chuck device comprising: a spin body which spins a wafer; and a stationary body which holds the spin body and is under the spin body with a space between the spin body and the stationary body, wherein the stationary body includes a blocking unit which blocks the space with a fluid.

Abstract: A wafer spin chuck and an etcher using the same are provided. According to an aspect of the present invention, there is provide a wafer spin chuck device comprising: a spin body which spins a wafer; and a stationary body which holds the spin body and is under the spin body with a space between the spin body and the stationary body, wherein the stationary body includes a blocking unit which blocks the space with a fluid.

Abstract: A substrate transport apparatus is provided for stably transporting a substrate and sensing a receiving state of the substrate. The substrate transport apparatus includes a grip member for gripping a substrate placed on the pocket part of the hand when a hand returns to a groove position from a pickup position. The grip member may include a pusher and an elastic member. The pusher has a curved section contacting the edge of a substrate and is mounted on the base to move in the same direction as the at least one hand, and the elastic member supplies an elastic force for enabling the pusher to laterally press the edge of the substrate.

Abstract: A substrate transport apparatus is provided for stably transporting a substrate and sensing a receiving state of the substrate. The substrate transport apparatus includes a grip member for gripping a substrate placed on the pocket part of the hand when a hand returns to a groove position from a pickup position. The grip member may include a pusher and an elastic member. The pusher has a curved section contacting the edge of a substrate and is mounted on the base to move in the same direction as the at least one hand, and the elastic member supplies an elastic force for enabling the pusher to laterally press the edge of the substrate.