Abstract: A method of forming a plasma-resistant coating layer with low brightness includes: (a) performing a heat treatment process on a primary rare-earth metal compound powder having a grain size in a range of 20 nm to 60 nm to prepare a secondary rare-earth metal compound powder, (b) transferring the secondary rare-earth metal compound powder, and (c) spraying the transferred secondary rare-earth metal compound powder onto a substrate to form a rare-earth metal compound coating layer on the substrate. In the transferring, a carrier gas is used to transfer the secondary rare-earth metal compound powder. The secondary rare-earth metal compound powder obtained through the heat treatment process has a grain size in a range of 70 nm to 150 nm, and the rare-earth metal compound coating layer has a brightness value of 50 or less.

Abstract: A method of forming a plasma-resistant coating layer with low brightness includes: (a) performing a heat treatment process on a primary rare-earth metal compound powder having a grain size in a range of 20 nm to 60 nm to prepare a secondary rare-earth metal compound powder, (b) transferring the secondary rare-earth metal compound powder, and (c) spraying the transferred secondary rare-earth metal compound powder onto a substrate to form a rare-earth metal compound coating layer on the substrate. In the transferring transfer, a carrier gas is used to transfer the secondary rare-earth metal compound powder. The secondary rare-earth metal compound powder obtained through the heat treatment process has a grain size in a range of 70 nm to 150 nm, and the rare-earth metal compound coating layer has a brightness value of 50 or less.

Abstract: Proposed is a method of forming a plasma-resistant coating film. The method includes (a) forming a lower coating layer on a target object by depositing a first rare-earth metal compound powder through a physical vapor deposition (PVD) process, (b) transferring a second rare-earth metal compound powder, and (c) forming an upper coating layer by spraying the transferred second rare-earth metal compound powder onto the lower coating layer, thereby obtaining a plasma-resistant coating film with fewer structural defects and enhanced physical properties.

Abstract: The proposed is a method of forming a plasma-resistant coating layer with low brightness. The method includes (a) performing a heat treatment process on a primary rare-earth metal compound powder having a grain size in a range of 20 nm to 60 nm to prepare a secondary rare-earth metal compound powder, (b) transferring the secondary rare-earth metal compound powder, and (c) spraying the transferred secondary rare-earth metal compound powder onto a substrate to form a rare-earth metal compound coating layer on the substrate. In the transfer, a carrier gas is used to transfer the secondary rare-earth metal compound powder. The secondary rare-earth metal compound powder obtained through the heat treatment process has a grain size in a range of 70 nm to 150 nm, and the rare-earth metal compound coating layer has a brightness value of 50 or less.

Abstract: A metal organic chemical vapor deposition apparatus includes reaction chambers in which nitride layers is deposited on a substrate using a group III-V material, a buffer chamber connected to the reaction chambers and in which a transfer robot is disposed to transfer the substrate into the reaction chambers, a gas supply device configured to selectively supply one or more of hydrogen, nitrogen, and ammonia gases into the buffer chamber so that when the buffer chamber communicates with one of the reaction chambers, the buffer chamber has the same atmosphere as an atmosphere of the reaction chamber, and a heater disposed in the buffer chamber. Nitride layers are deposited on a substrate in the reaction chambers, and the temperature and gas atmosphere of the buffer chamber are adjusted such that when the substrate is transferred, epitaxial layers formed on the substrate can be stably maintained.

Abstract: Provided is a method in which a difference between a surface temperature of a susceptor and a surface temperature of a substrate is accurately grasped without using a complicated high-priced equipment. A temperature control method for a chemical vapor deposition apparatus includes detecting a rotation state of a susceptor on which a substrate is accumulated on a top surface thereof, measuring a temperature of the top surface of the susceptor, calculating a temperature distribution of the top surface of the susceptor, based on the detected rotation state and the measured temperature, and controlling the temperature of the top surface of the susceptor, based on the calculated temperature distribution.

Abstract: Disclosed is a nitride-based light emitting device using a silicon substrate. The nitride-based light emitting device includes a silicon (Si) substrate, a seed layer for nitride growth formed on the silicon substrate, and a light emitting structure formed on the seed layer and having a plurality of nitride layers stacked therein. The seed layer for nitride growth is comprised of GaN powders, thereby minimizing occurrence of dislocations caused by a difference in lattice constant between a nitride layer and the silicon substrate. A method of manufacturing the same is also disclosed.

Abstract: Disclosed is a nitride-based light emitting device using powders of a material having a Wurtzite lattice structure, such as ZnO powders. The nitride-based light emitting device includes a growth substrate, a lattice buffer layer formed on the growth substrate, and a light emitting structure formed on the lattice buffer layer and having a plurality of nitride layers stacked therein, wherein the lattice buffer layer is formed of powders of a material having a Wurtzite lattice structure. The lattice buffer layer is formed of ZnO powders, thereby minimizing occurrence of dislocations caused by a difference in lattice constant between a nitride layer and the growth substrate during growth of the nitride layer. A method of manufacturing the same is also disclosed.

Abstract: Disclosed is a nitride-based light emitting device having an inverse p-n structure in which a p-type nitride layer is first formed on a growth substrate. The light emitting device includes a growth substrate, a powder type seed layer for nitride growth formed on the growth substrate, a p-type nitride layer formed on the seed layer for nitride growth, a light emitting active layer formed on the p-type nitride layer, and an n-type ZnO layer formed on the light emitting active layer. The p-type nitride layer is first formed on the growth layer and the n-type ZnO layer having a relatively low growth temperature is then formed thereon instead of an n-type nitride layer, thereby providing excellent crystallinity and high brightness. A method of manufacturing the same is also disclosed.

Abstract: Disclosed herein is a method of manufacturing GaN powders using a GaN etching product produced during manufacture of a GaN-based light emitting device. The method includes collecting a GaN etching product produced during etching of the GaN-based light emitting device, cleaning the collected GaN etching product; heating the cleaned GaN etching product to remove indium (In) components from the GaN etching product, and pulverizing the GaN etching product having the indium components removed therefrom into powders. A nitride-based light emitting device using the GaN powders is also disclosed.

Abstract: Disclosed is a nitride-based light emitting device capable of improving crystallinity and brightness. The nitride-based light emitting device includes a growth substrate, a lattice buffer layer formed on the growth substrate, a p-type nitride layer formed on the lattice buffer layer, a light emitting active layer formed on the p-type nitride layer, and an n-type ZnO layer formed on the light emitting active layer. The lattice buffer layer is formed of powders of a material having a Wurtzite lattice structure. The lattice buffer layer is formed of ZnO powders, thereby minimizing generation of dislocations during nitride growth. A method of manufacturing the same is also disclosed.

Abstract: Disclosed is a method of manufacturing a nitride-based light emitting device, in which a patterned lattice buffer layer is formed to minimize dislocation density upon growth of a nitride layer and an air gap is formed to enhance brightness of the light emitting device. The method includes depositing a material having a Wurtzite lattice structure on a substrate to form a deposition layer, forming an etching pattern on a surface of the deposition layer to form a patterned lattice buffer layer, and growing a nitride layer on the patterned lattice buffer layer. During the growth of the nitride layer, the patterned lattice buffer layer is removed to form an air gap at a portion of the nitride layer from which the patterned lattice buffer layer is removed. A nitride-based light emitting device manufactured thereby is also disclosed.

Abstract: Disclosed are a chemical vapor deposition (CVD) apparatus and a control method thereof, the CVD apparatus including: a chamber; a susceptor which is provided inside the chamber and on which a substrate is placed; a process-gas supplying unit which is placed above the susceptor and supplies process gas; a sensing tube which is placed above the susceptor and opened toward the susceptor or the substrate; a temperature sensing member which is installed at a side of the sensing tube and senses temperature of the susceptor or substrate through the sensing tube; and a purge-gas supplying unit which injects purge gas into the sensing tube.

Abstract: Provided is a method in which a difference between a surface temperature of a susceptor and a surface temperature of a substrate is accurately grasped without using a complicated high-priced equipment. A temperature control method for a chemical vapor deposition apparatus includes detecting a rotation state of a susceptor on which a substrate is accumulated on a top surface thereof, measuring a temperature of the top surface of the susceptor, calculating a temperature distribution of the top surface of the susceptor, based on the detected rotation state and the measured temperature, and controlling the temperature of the top surface of the susceptor, based on the calculated temperature distribution.

Abstract: A metal organic chemical vapor deposition apparatus includes reaction chambers in which nitride layers is deposited on a substrate using a group III-V material, a buffer chamber connected to the reaction chambers and in which a transfer robot is disposed to transfer the substrate into the reaction chambers, a gas supply device configured to selectively supply one or more of hydrogen, nitrogen, and ammonia gases into the buffer chamber so that when the buffer chamber communicates with one of the reaction chambers, the buffer chamber has the same atmosphere as an atmosphere of the reaction chamber, and a heater disposed in the buffer chamber. Nitride layers are deposited on a substrate in the reaction chambers, and the temperature and gas atmosphere of the buffer chamber are adjusted such that when the substrate is transferred, epitaxial layers formed on the substrate can be stably maintained.