Abstract: Disclosed herein are a metallic laminate, including (i) a metal layer and (ii) a polyimide resin layer having a coefficient of thermal expansion of 19 ppm/° C. or less and a glass transition temperature of 350° C. or more, laminated on the metal layer, and a method of manufacturing the same. According to this invention, the metallic laminate has a good external appearance, having no foam on the polyimide resin layer.

Abstract: An image pixel of a CMOS image sensor in which a dark diode serving as a dark current source is directly connected to a photo diode so that a dark current generated in an image pixel can be minimized. Further, since noise which can be generated by the dark current can be reduced, a high S/N ratio is obtained, and dynamic range and low illumination characteristics are enhanced. In addition, operational characteristics at high temperature can be improved.

Abstract: The invention relates to an image sensor and an image processing apparatus using the same having a color filter array with open window cells alternating with single color filter cells. The image sensor includes a lens array containing a plurality of microlenses, a color filter array having a plurality of open window cells and color filter cells, each corresponding to each microlens. The image sensor also includes a protection layer, and a pixel sensor array having a first photosensor sensing a first light passed through each color filter cell, a second photosensor formed under the first photosensor, sensing a second light passed through each color filter cell, a third photosensor sensing a third light passed through each open window cell, and a fourth photosensor formed under the third photosensor, sensing a fourth light passed through each open window cell.

Abstract: Disclosed herein is a photodetector suitable for use in an optical pickup reproducing apparatus, which is capable of detecting short-wavelength light (e.g., light of about 405 nm) from storage media having large capacity, such as BD, with a high efficiency at a high speed, and a method of manufacturing the same.

Abstract: Disclosed is a multi-wavelength light receiving element. The multi-wavelength light receiving element includes a first type substrate. A first intrinsic layer is positioned on the first type substrate. A heavily-doped second-type buried layer is positioned on the first intrinsic layer. A second intrinsic layer is positioned on the heavily-doped second-type buried layer. A plurality of heavily-doped first-type fingers are shallowly embedded in the second intrinsic layer. A first type has a doped state that is opposite to a second type.