Abstract: The proposed technology relates to an oxygen sensor for a vehicle, the oxygen sensor including a housing, a sleeve coupled to the housing, a sensor element configured to determine an oxygen concentration and provided within an inner space defined by the housing and the sleeve, a contact terminal connected to the sensor element, a contact bush including an upper bush and a lower bush, and a positioning unit coupled with the contact bush and maintaining a gap between a circumference of the contact bush and an inner side surface of the sleeve. In particular, the contact bush is coupled with the sensor element and the terminal at the center of the sleeve, and movement due to external impact is prevented.

Abstract: A semiconductor device and a method of manufacturing the same are disclosed. The semiconductor device includes a first body region disposed in a substrate and having a first conductivity type, a second body region disposed on the first body region and having the first conductivity type and a portion protruding in a channel length direction, a source region disposed in the second body region and having a second conductivity type, a drain region spaced apart from the protruding portion of the second body region in the channel length direction and having the second conductivity type, a well region configured to electrically connect the protruding portion of the second body region and the drain region and having the second conductivity type, and a gate structure disposed on the protruding portion of the second body region.

Abstract: A super junction semiconductor device includes a substrate of a first conductive type, the substrate having an active region, a peripheral region and a transition region, an epitaxial layer formed on the substrate, the epitaxial layer having the first conductive type, a plurality of pillars extending from the substrate through the epitaxial layer in a vertical direction, a gate electrode structure formed in the active region and on the epitaxial layer, a gate pad structure formed in the transition region and over the epitaxial layer, and a reverse recovery layer interposed between the gate pad structure and the epitaxial layer, the reverse recovery layer being configured to disperse a reverse recovery current at the gate pad structure.

Abstract: The proposed technology relates to an oxygen sensor for a vehicle, the oxygen sensor including a housing, a sleeve coupled to the housing, a sensor element configured to determine an oxygen concentration and provided within an inner space defined by the housing and the sleeve, a contact terminal connected to the sensor element, a contact bush including an upper bush and a lower bush, and a positioning unit coupled with the contact bush and maintaining a gap between a circumference of the contact bush and an inner side surface of the sleeve. In particular, the contact bush is coupled with the sensor element and the terminal at the center of the sleeve, and movement due to external impact is prevented.

Abstract: The present invention relates to a method for preparing polylactic acid. According to the method for preparing polylactic acid, high quality polylactic acid can be provided by effectively removing residual monomers while minimizing property changes of the polylactic acid.

Abstract: A particulate matter sensor and an exhaust gas purification system using the same are provided. A particular matter sensor according to some embodiments of the present invention includes a first insulation layer including a first electrode unit exposed on a first side thereof, which includes a plurality of first electrodes not electrically connected to each other, a second insulation layer arranged in parallel to the first insulation layer with a space therebetween, including a second electrode unit on a first side thereof, which includes a plurality of second electrodes electrically connected to each other, a temperature sensing unit formed on a first side of a third insulation layer located on a second side of the second insulation layer, and a heater unit formed on a first side of a fourth insulation layer located on a second side of the third insulation layer, the heater unit configured to heat the first and second electrode units.

Abstract: A semiconductor device and a method of manufacturing the same are disclosed. The semiconductor device includes a first body region disposed in a substrate and having a first conductivity type, a second body region disposed on the first body region and having the first conductivity type and a portion protruding in a channel length direction, a source region disposed in the second body region and having a second conductivity type, a drain region spaced apart from the protruding portion of the second body region in the channel length direction and having the second conductivity type, a well region configured to electrically connect the protruding portion of the second body region and the drain region and having the second conductivity type, and a gate structure disposed on the protruding portion of the second body region.

Abstract: A step of forming bump pads on the surface of the substrate corresponding to the cavity region, and covering the whole surface with a second insulating layer, forming a copper barrier on the surface of a second insulating layer corresponding to the cavity region for protection of the second insulating layer, forming a third insulating layer, and forming a copper layer for electrical circuit. A mask is formed on the copper later of the external circuit so that only the cavity region is exposed. The cavity is formed by laser-drilling only the surface-exposed area of the third insulating layer. The bottom copper layer protects the second insulating layer and bump pads underneath from laser damages. The copper barrier is removed by chemical etch after the laser drill. The second insulating layer with the bottom surface exposed will be removed via sand blast process, exposing the bump pads fabricated.

Abstract: The present invention relates to a method for preparing polylactic acid. According to the method for preparing polylactic acid, high quality polylactic acid can be provided by effectively removing residual monomers while minimizing property changes of the polylactic acid.

Abstract: In a method of manufacturing a quantum dot, a core may be formed using (utilizing) at least one cation precursor and at least one anion precursor. The core may be reacted with a shell forming precursor and a ligand forming precursor for more than one hour to form a shell enclosing the core and a ligand. A nanoparticle including the core, the shell and the ligand may be washed.

Abstract: An organic light emitting element according to an example embodiment of the present disclosure includes: a first electrode and a second electrode facing each other; an emission layer between the first electrode and the second electrode; an electron transport layer between the emission layer and the second electrode; and a buffer layer between the emission layer and the electron transport layer, wherein the buffer layer includes a first material having a higher LUMO level than that of the electron transport layer.

Abstract: Provided is an organic light-emitting device including a first electrode, a second electrode disposed opposite to the first electrode, an emission layer disposed between the first electrode and the second electrode, and an electron-transporting layer disposed between the emission layer and the second electrode. The electron-transporting layer includes a first electron-transporting material and a second electron-transporting material. The lowest unoccupied molecular orbital (LUMO) energy level of the first electron-transporting material (EL1) and the lowest unoccupied molecular orbital (LUMO) energy level of the second electron-transporting material (EL2) satisfy the equation 0.1 eV?|EL1?EL2|?0.3 eV.

Abstract: The present invention comprises a step of forming bump pads on the surface of the substrate, covering the whole surface with a second insulating layer, forming a copper barrier on the surface of a second insulating layer, forming a third insulating layer, and forming a copper layer for an electrical circuit. A mask is formed on the copper layer of the external circuit in such a way that only the region for the cavity is exposed. The cavity is formed by laser-drilling only the surface-exposed area of the third insulating layer. The copper layer at the bottom protects the second insulating layer and bump pads underneath from laser damages. The copper barrier is removed by chemical etch once the laser drill is over. The second insulating layer will be removed via sand blast process, exposing the bump pads which were fabricated in the earlier steps.

Abstract: An organic light emitting diode (OLED) display includes a substrate, a thin film transistor disposed on the substrate, a first electrode disposed on the thin film transistor and electrically connected to the thin film transistor, a first auxiliary layer disposed on the first electrode, an emission layer disposed on the first auxiliary layer, an electron transport layer disposed on the emission layer, a first buffer layer disposed on the electron transport layer, and a second electrode disposed on the first buffer layer.

Abstract: In a method of manufacturing a quantum dot, a core may be formed using (utilizing) at least one cation precursor and at least one anion precursor. The core may be reacted with a shell forming precursor and a ligand forming precursor for more than one hour to form a shell enclosing the core and a ligand. A nanoparticle including the core, the shell and the ligand may be washed.

Abstract: An organic light emitting element according to an example embodiment of the present disclosure includes: a first electrode and a second electrode facing each other; an emission layer between the first electrode and the second electrode; an electron transport layer between the emission layer and the second electrode; and a buffer layer between the emission layer and the electron transport layer, wherein the buffer layer includes a first material having a higher LUMO level than that of the electron transport layer.

Abstract: In a method of manufacturing a quantum dot, a core may be formed using (utilizing) at least one cation precursor and at least one anion precursor. The core may be reacted with a shell forming precursor and a ligand forming precursor for more than one hour to form a shell enclosing the core and a ligand. A nanoparticle including the core, the shell and the ligand may be washed.

Abstract: A particulate matter sensor and an exhaust gas purification system using the same are provided. A particular matter sensor according to some embodiments of the present invention includes a first insulation layer including a first electrode unit exposed on a first side thereof, which includes a plurality of first electrodes not electrically connected to each other, a second insulation layer arranged in parallel to the first insulation layer with a space therebetween, including a second electrode unit on a first side thereof, which includes a plurality of second electrodes electrically connected to each other, a temperature sensing unit formed on a first side of a third insulation layer located on a second side of the second insulation layer, and a heater unit formed on a first side of a fourth insulation layer located on a second side of the third insulation layer, the heater unit configured to heat the first and second electrode units.

Abstract: An organic light emitting device, and a manufacturing method of the same, in which in a light emitting layer, an electron trap material is introduced so as to improve a light emitting property and an operating characteristic and to prolong a life span.