Abstract: A light emitting device include a first lead frame including a first bonding region and a second lead frame including a second bonding region. A gap is provided between the first and second lead frames. A first body is coupled to the first and second lead frames and includes an open region exposing the first and second bonding regions. A second body is coupled onto the first body and includes a first opening on the open region of the first body. A light emitting chip is provided on the second bonding region of the second lead frame, and a transmissive resin layer surrounds the light emitting chip in the open region of the first body and the first opening of the second body.

Abstract: Provided is a flexible multilayer thin film capacitor using a flexible metal substrate, including: a metal substrate; a metal oxide layer formed on the whole surface of the metal substrate; a plurality of first internal electrode layers selectively applied on a first surface of the metal substrate using a metal material; a plurality of dielectric layers formed to be sequentially multi-layered on the whole surface of the first internal electrode layers using a dielectric material; a plurality of second internal electrode layers selectively applied on the dielectric layers using a metal material; a protecting layer applied on a surface of one of the plurality of second internal electrode layers; and a single pair of external electrodes connected to contact with the plurality of first internal electrode layers and the plurality of second internal electrode layers, respectively, and soldered on conductive inter-layer pads of a printed circuit board.

Abstract: Provided is a package type multilayer thin film capacitor for a high capacitance, including: a capacitance block 110; a pair of clamp members 120 and 130 being installed on one side and another side of the capacitance block 110, respectively; a pair of lead members 140 and 150 being installed on the clam members 120 and 130, respectively; and a molding member 160 filling in the capacitance block 110 to partially expose each of the pair of lead members 140 and 150. The capacitance block may be configured by adhering at least two of a ceramic sintered member 111, a metal capacitance member 112, and a thin film capacitance member 113 using an insulating adhesive member and thereby disposing the at least two members in a multilayered form. Accordingly, capacitance may increase and mechanical strength may be enhanced.

Abstract: A titanium oxide composite, a titanium oxide composite manufacturing method, and a super capacitor using the same are provided. The titanium oxide composite is prepared to surround graphene on a surface of granule type titanium oxide. One of a granule type LixTiyOz and a granule type HxTiyOz is selected and thereby used for the granule type titanium oxide, the granule type LixTiyOz satisfies 1?x?4, 1?y?5, and 1?z?12, and the granule type HxTiyOz satisfies 1?x?2, 1?y?12, and 1?z?25.

Abstract: Provided is a package type multi-layer thin film capacitor for large capacitance, including: a ceramic sintered body formed with slots on one side and another side thereof, respectively; a plurality of first internal electrode layers formed within the ceramic sintered body; a plurality of second internal electrode layers formed within the ceramic sintered body to be positioned between the plurality of first internal electrode layers; a pair of first main connection electrode members inserted into the slots to be connected to the first internal electrode layers or the second internal electrode layers, respectively; a pair of first main lead members inserted into the slots and to be connected to the first main connection electrode members, respectively; and a sealing member sealing the ceramic sintered body to partially expose each of the pair of first main lead members.

Abstract: A direct current (DC) link capacitor module includes a printed circuit board (PCB) formed by sequentially disposing a first electrode substrate, an insulation substrate, a second electrode substrate, a third electrode substrate; a plurality of DC link capacitors connected in parallel to each of the first electrode substrate and the second electrode substrate; a plurality of first Y-capacitors connected in series to each of the first electrode substrate and the third electrode substrate, and connected in parallel to the DC link capacitors; and a plurality of second Y-capacitors connected in series to each of the first electrode substrate and the third electrode substrate, and connected in parallel to the first Y-capacitors, thereby achieving a miniaturization and facilitating a fabrication by connecting the plurality of DC link capacitors using the PCB.

Abstract: A light emitting device according to the embodiment includes a body; a first lead electrode having a first bonding part and a second bonding part; a second lead electrode having a third bonding part and a fourth bonding part; a gap part between the first and second lead electrodes; a third lead electrode on a bottom surface of the body; a fourth lead electrode on the bottom surface of the body; a first connection electrode; a second connection electrode; a light emitting chip; and a first bonding member, wherein the gap part includes a first gap part disposed between the first and third bonding parts, and the first gap part includes first and second regions spaced apart from each other corresponding to a width of the third bonding part, and a third region connected to the first and second regions and disposed perpendicularly to the first and second regions.

Abstract: Disclosed are a light emitting device. The light emitting device includes a body having a cavity; a plurality of lead frames in the cavity; a light emitting chip; a first molding member having a first metal oxide material around the light emitting chip; and a second molding member having a second metal oxide material on the first molding member and the light emitting chip, wherein the light emitting chip includes a reflective electrode layer under a light emitting structure, wherein a top surface of the first molding member extends from a region between a top surface of the light emitting chip and a lateral side of the reflective electrode layer at a predetermined curvature, and wherein a bottom surface of the second molding member includes a curved surface which is convex toward the first molding member.

Abstract: According to example embodiments, a semiconductor device may include a high electron mobility transistor (HEMT) on a first region of a substrate, and a diode on a second region of the substrate. The HEMT may be electrically connected to the diode. The HEMT and the diode may be formed on an upper surface of the substrate such as to be spaced apart from each other in a horizontal direction. The HEMT may include a semiconductor layer. The diode may be formed on another portion of the substrate on which the semiconductor layer is not formed. The HEMT and the diode may be cascode-connected to each other.

Abstract: Disclosed are a glass composition and a dielectric composition enabling low temperature sintering, and a high capacitance multilayer ceramic capacitor using the same. In the glass composition used for sintering, the glass composition may be formed of a formula, aR2O-bCaO-cZnO-dBaO-eB2O3-fAl2O3-gSiO2, and the formula may satisfy a+b+c+d+e+f+g=100, 0?a?7, 1?b?3, 1?c?15, 10?d?20, 3?e?10, 0?f?3, and 55?g?72. Through this, when manufacturing the high capacity multilayer ceramic capacitor, the dielectric substance may enable the lower temperature sintering, thereby enhancing a capacitance and a reliability of the high capacitance multilayer ceramic capacitor.

Abstract: A method of manufacturing a metal paste for an internal electrode according to the present invention includes preparing each of a metal powder and an organic vehicle; preparing a ceramic inhibitor powder in which a nano glass added with a rare-earth element is mixed; manufacturing a primary mixture by mixing the metal powder of 70 to 95 wt % and the ceramic inhibitor powder of 5 to 30 wt % when each of the metal powder, the organic vehicle, and the ceramic inhibitor powder in which the nano glass added with the rare-earth element is mixed is prepared; manufacturing a secondary mixture by mixing the primary mixture of 50 to 70 wt % and the organic vehicle of 30 to 50 wt % when the primary mixture is manufactured; and manufacturing the metal paste for the internal electrode by filtering the secondary mixture when the secondary mixture is manufactured.

Abstract: The present invention relates to a dielectric ceramic composition for multilayer ceramic capacitor (MLCC), including a first component of 91 to 98 wt % and a second component of 2 to 9 wt %, wherein the first component includes a main component BaTiO3 of 94 to 98 wt %, a first subcomponent of 0.5 to 2 wt % including a glass powder having a mesh structure, and a second subcomponent of 1 to 4 wt % including at least one of MgO, Cr2O3 and Mn3O4, and the second component includes (Ba1-y-xCaySrx)(ZryTi1-y)O3, and x satisfies 0.2?x?0.8 and y satisfies 0.03?y?0.15.

Abstract: Disclosed are a glass composition and a dielectric composition enabling low temperature sintering, and a high capacitance multilayer ceramic capacitor using the same. In the glass composition used for sintering, the glass composition may be formed of a formula, aR2O-bCaO-cZnO-dBaO-eB2O3-fAl2O3-gSiO2, and the formula may satisfy a+b+c+d+e+f+g=100, 0?a?7, 1?b?3, 1?c?15, 10?d?20, 3?e?10, 0?f?3, and 55?g?72. Through this, when manufacturing the high capacity multilayer ceramic capacitor, the dielectric substance may enable the lower temperature sintering, thereby enhancing a capacitance and a reliability of the high capacitance multilayer ceramic capacitor.

Abstract: Provided is a preparation method of a metal oxide doped monolith carbon aerogel for a high capacitance capacitor, the including: preparing a monolith carbon aerogel by performing a thermal decomposition of a moist gel dried in condition of a atmospheric pressure and a room temperature in a nitrogen atmosphere; impregnating the monolith carbon aerogel into alcohol where a metal precursor is dissolved; and calcinating the monolith carbon aerogel where the metal precursor is impregnated in an atmospheric atmosphere. By impregnating the metal oxide into the monolith carbon aerogel, a limit of capacitance may be enhanced using a pseudo capacitance effect by an interfacial oxidation reduction reaction.

Abstract: Provided is a package type multilayer thin film capacitor for a high capacitance, including: a capacitance block 110; a pair of clamp members 120 and 130 being installed on one side and another side of the capacitance block 110, respectively; a pair of lead members 140 and 150 being installed on the clam members 120 and 130, respectively; and a molding member 160 filling in the capacitance block 110 to partially expose each of the pair of lead members 140 and 150. The capacitance block may be configured by adhering at least two of a ceramic sintered member 111, a metal capacitance member 112, and a thin film capacitance member 113 using an insulating adhesive member and thereby disposing the at least two members in a multilayered form. Accordingly, capacitance may increase and mechanical strength may be enhanced.

Abstract: Provided is a package type multi-layer thin film capacitor for large capacitance, including: a ceramic sintered body formed with slots on one side and another side thereof, respectively; a plurality of first internal electrode layers formed within the ceramic sintered body; a plurality of second internal electrode layers formed within the ceramic sintered body to be positioned between the plurality of first internal electrode layers; a pair of first main connection electrode members inserted into the slots to be connected to the first internal electrode layers or the second internal electrode layers, respectively; a pair of first main lead members inserted into the slots and to be connected to the first main connection electrode members, respectively; and a sealing member sealing the ceramic sintered body to partially expose each of the pair of first main lead members.

Abstract: Provided is a high power super capacitor including: a bobbin; an electrode assembly being wound into the bobbin to be in a jellyroll type; a conductive connection member being formed in each of one end and another end of the electrode assembly using electric energy; and a plug being inserted into each of one end and another end of the bobbin, and being bonded with the conductive connection member using electric energy to be electrically connected to the electrode assembly.

Abstract: Provided is a hybrid super capacitor using a composite electrode that may enhance equivalent series resistance (ESR) using a carbon nanotube chain. The hybrid super capacitor includes: an anode 11 including an anode oxide layer 11a and an activated carbon layer applied 11b on the anode oxide layer 11a; and a cathode 21 being disposed to face the anode 11. The cathode 21 may include a silicon oxide layer 21a, a lithium titanium oxide layer 21b disposed on the silicon oxide layer 21a, and a carbon nanotube chain CT formed to pass through the silicon oxide layer 21a and the lithium titanium oxide layer 21b to thereby be electrically connected to each other, thereby enhancing ESR and expanding an output density and a lifespan of the hybrid super capacitor.

Abstract: A method for play synchronization and a device using the same are provided. A first device stores time-based content play information. The first device plays content according to the time-based content play information. The first device transmits the time-based content play information to a second device so that the second device plays the content according to the time-based content play information. Accordingly, the content played by one device can be played by another device concurrently.

Abstract: Methods and apparatus for transmitting data are provided. A relationship, between a sender of a call signal and a receiver of a call signal, that exists in at least one network service server, is confirmed. Data associated with the sender is selected based on the relationship between the sender and the receiver. The data associated with the sender is transmitted to the receiver.