Abstract: A system and method for testing standby current of a semiconductor package is provided. The method includes testing semiconductor chips formed on a wafer having a predetermined wafer run number, collecting measured values of standby current of the semiconductor chips, and storing the measured values of standby current in a database, by using a wafer tester; recognizing a wafer run number of each of semiconductor packages to be tested; downloading measured values of standby current of semiconductor chips corresponding to the recognized wafer run number from the database to a semiconductor package tester; extracting a boundary value defining predetermined upper values of the downloaded measured values of standby current, by using the semiconductor package tester; setting the boundary value as a standby current limit of a program for testing the semiconductor packages by use of the semiconductor package tester; and testing the semiconductor packages based on the standby current limit.

Abstract: A semiconductor memory device includes a switch circuit that inverts input data or output data when burn-in mode enable signals are activated or a control signal switch that inverts external control signals or internal control signals when burn-in mode enable signals are activated. A burn-in test method for the semiconductor memory device performs a pass/fail decision to determine whether the output data has passed or failed based on an inverted logical value of the input data.

Abstract: A system and method for testing standby current of a semiconductor package is provided. The method includes testing semiconductor chips formed on a wafer having a predetermined wafer run number, collecting measured values of standby current of the semiconductor chips, and storing the measured values of standby current in a database, by using a wafer tester; recognizing a wafer run number of each of semiconductor packages to be tested; downloading measured values of standby current of semiconductor chips corresponding to the recognized wafer run number from the database to a semiconductor package tester; extracting a boundary value defining predetermined upper values of the downloaded measured values of standby current, by using the semiconductor package tester; setting the boundary value as a standby current limit of a program for testing the semiconductor packages by use of the semiconductor package tester; and testing the semiconductor packages based on the standby current limit.

Abstract: A semiconductor memory device includes a switch circuit that inverts input data or output data when burn-in mode enable signals are activated or a control signal switch that inverts external control signals or internal control signals when burn-in mode enable signals are activated. A burn-in test method for the semiconductor memory device performs a pass/fail decision to determine whether the output data has passed or failed based on an inverted logical value of the input data.