Patents by Inventor Joo-Seok Park

Joo-Seok Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Aluminum deficient ?-SiAlON phosphors, method of preparing the same, and LED chip package using the same
    Patent number: 9127197
    Abstract: The present disclosure provides ?-SiAlON phosphors, a method of preparing the same, and an LED chip package using the same. The method includes weighing and mixing raw materials of Ca0.8-xRexAlaySi12-yO1.2N14.8 (Re is a rare-earth element, 0?x?0.2, 2.6?y?3.0, and 0.6?a?0.95), and sintering the mixed raw materials via normal pressure sintering to prepare phosphors having a composition of Ca0.8-xRexAlaySi12-yO1.2N14.8.
    Type: Grant
    Filed: October 14, 2011
    Date of Patent: September 8, 2015
    Assignee: KOREA INSTITUTE OF ENERGY RESEARCH
    Inventors: Bo-Yun Jang, Sung-Soon Park, Joo-Seok Park
  • Apparatus for producing silicon nanocrystals using inductively coupled plasma
    Patent number: 8377205
    Abstract: The present disclosure relates to an apparatus for producing silicon nanocrystals, which can minimize plasma diffusion by finely adjusting a plasma region created by an ICP coil. The apparatus includes a reactor having an ICP coil wound around an outer wall thereof and a tube inserted into the reactor, wherein a primary gas for forming silicon nanocrystals and a secondary gas for surface reaction of the silicon nanocrystals are separately supplied to the reactor through an inner side and an outer side of the tube, respectively.
    Type: Grant
    Filed: October 26, 2009
    Date of Patent: February 19, 2013
    Assignee: Korea Institute of Energy Research
    Inventors: Bo-Yun Jang, Chang-Hyun Ko, Jeong-Chul Lee, Joon-Soo Kim, Joo-Seok Park
  • ALUMINUM DEFICIENT alpha-SiAION PHOSPHORS, METHOD OF PREPARING THE SAME, AND LED CHIP PACKAGE USING THE SAME
    Publication number: 20120261694
    Abstract: The present disclosure provides ?-SiAlON phosphors, a method of preparing the same, and an LED chip package using the same. The method includes weighing and mixing raw materials of Ca0.8-xRexAlaySi12-yO1.2N14.8 (Re is a rare-earth element, 0?x?0.2, 2.6?y?3.0, and 0.6?a?0.95), and sintering the mixed raw materials via normal pressure sintering to prepare phosphors having a composition of Ca0.8-xRexAlaySi12-yO1.2N14.8.
    Type: Application
    Filed: October 14, 2011
    Publication date: October 18, 2012
    Applicant: KOREA INSTITUTE OF ENERGY RESEARCH
    Inventors: Bo-Yun JANG, Sung-Soon PARK, Joo-Seok PARK
  • Nitride red phosphors and white light emitting diode using rare-earth-co-doped nitride red phosphors
    Patent number: 8007686
    Abstract: Disclosed are nitride red phosphors and white light emitting diodes using the same. More particularly, the present invention provides a nitride red phosphor with easily controlled composition of phosphor fraction and improved uniformity and color gamut thereof, a method for preparation thereof, a white light emitting diode with excellent color rendition and high light emitting efficiency, and a white light emitting diode package using the same.
    Type: Grant
    Filed: December 29, 2008
    Date of Patent: August 30, 2011
    Assignee: Korea Institute of Energy Research
    Inventors: Joo-Seok Park, Bo-Yoon Jang, Soon-Jae Yu, Joon-Soo Kim
  • APPARATUS FOR PRODUCING SILICON NANOCRYSTALS USING INDUCTIVELY COUPLED PLASMA
    Publication number: 20100203334
    Abstract: The present disclosure relates to an apparatus for producing silicon nanocrystals, which can minimize plasma diffusion by finely adjusting a plasma region created by an ICP coil. The apparatus includes a reactor having an ICP coil wound around an outer wall thereof and a tube inserted into the reactor, wherein a primary gas for forming silicon nanocrystals and a secondary gas for surface reaction of the silicon nanocrystals are separately supplied to the reactor through an inner side and an outer side of the tube, respectively.
    Type: Application
    Filed: October 26, 2009
    Publication date: August 12, 2010
    Inventors: Bo-Yun JANG, Chang-Hyun Ko, Jeong-Chul Lee, Joon-Soo Kim, Joo-Seok Park
  • Nitride Red Phosphors and White Light Emitting Diode Using Rare-Earth-Co-Doped Nitride Red Phosphors
    Publication number: 20100163896
    Abstract: Disclosed are nitride red phosphors and white light emitting diodes using the same. More particularly, the present invention provides a nitride red phosphor with easily controlled composition of phosphor fraction and improved uniformity and color gamut thereof, a method for preparation thereof, a white light emitting diode with excellent color rendition and high light emitting efficiency, and a white light emitting diode package using the same.
    Type: Application
    Filed: December 29, 2008
    Publication date: July 1, 2010
    Applicant: Korea Institute of Energy Research
    Inventors: Joo-Seok Park, Bo-Yoon Jang, Soon-Jae Yu, Joon-Soo Kim