Abstract: A semiconductor memory device may include a substrate having a plurality of active regions wherein each active region has a length in a direction of a first axis and a width in a direction of a second axis. The length may be greater than the width, and the plurality of active regions may be provided in a plurality of columns of active regions in the direction of the second axis. A plurality of wordline pairs may be provided on the substrate, with each wordline pair crossing active regions of a respective column of active regions defining a drain portion of each active region between wordlines of the respective wordline pair. A plurality of bitlines on the substrate may cross the plurality of wordline pairs, with each bitline being electrically coupled to a respective drain portion of an active region of each column, and with each bitline being arranged between the respective drain portion and another drain portion of an adjacent active region of the same column.

Abstract: A semiconductor memory device may include a semiconductor substrate having an active region thereof, and the active region may have a length and a width, with the length being greater than the width. A field isolation layer may be on the semiconductor substrate surrounding the active region. First and second wordlines may be on the substrate crossing the active region, with the first and second wordlines defining a drain portion of the active region between the first and second wordlines and first and second source portions of the active region at opposite ends of the active region. First and second memory storage elements may be respectively coupled to the first and second source portions of the active region, with the first and second wordlines being between portions of the respective first and second memory storage elements and the active region in a direction perpendicular to a surface of the substrate.

Abstract: A semiconductor memory device may include a substrate having a plurality of active regions wherein each active region has a length in a direction of a first axis and a width in a direction of a second axis. The length may be greater than the width, and the plurality of active regions may be provided in a plurality of columns of active regions in the direction of the second axis. A plurality of wordline pairs may be provided on the substrate, with each wordline pair crossing active regions of a respective column of active regions defining a drain portion of each active region between wordlines of the respective wordline pair. A plurality of bitlines on the substrate may cross the plurality of wordline pairs, with each bitline being electrically coupled to a respective drain portion of an active region of each column, and with each bitline being arranged between the respective drain portion and another drain portion of an adjacent active region of the same column.

Abstract: A semiconductor memory device may include a substrate having a plurality of active regions and a field isolation layer on the substrate surrounding the active regions of the substrate. Each of the plurality of active regions may have a length in a direction of a first axis and a width in a direction of a second axis, and the length may be greater than the width. The plurality of active regions may be provided in a plurality of columns of active regions in the direction of the second axis, and active regions of adjacent columns may be offset in the direction of the second axis.

Abstract: A semiconductor memory device may include a substrate having a plurality of active regions and a field isolation layer on the substrate surrounding the active regions of the substrate. Each of the plurality of active regions may have a length in a direction of a first axis and a width in a direction of a second axis, and the length may be greater than the width. The plurality of active regions may be provided in a plurality of columns of active regions in the direction of the second axis, and active regions of adjacent columns may be offset in the direction of the second axis.

Abstract: A photosensitive copolymer has a weight-average molecular weight of 3,000 to 100,000 and is represented by the following formula: wherein R1 is a hydrogen atom or methyl, R2 is an acid-labile tertiary alkyl group, and m/(m+n) is 0.5 to 0.8.

Abstract: A method for forming a fine pattern in a semiconductor substrate, by coating a target layer to be etched on a semiconductor substrate with a resist composition including at least one compound capable of forming a photoresist pattern by a photolithography process, and a free radical initiator. The free radical initiator is capable of being decomposed by a thermal process at a temperature equal to or higher than the glass transition temperature of the at least one compound. A lithography process is performed on the resist compound layer to form a photoresist pattern. The resist compound layer having the photoresist pattern formed therein is heated to a temperature equal to or higher than the glass transition temperature of the at least one compound, and wherein a partial cross-linking reaction in the resist composition occurs.

Abstract: A photosensitive polymer comprises a fluorinated ethylene glycol group and a chemically amplified resist composition including the photosensitive polymer. The photosensitive polymer has a weight average molecular weight of about 3,000-50,000 having a repeating unit as follows: wherein R1 is a hydrogen atom or methyl group, and R2 is a fluorinated ethylene glycol group having 3 to 10 carbon atoms.

Abstract: A method for forming a fine pattern in a semiconductor substrate, by coating a target layer to be etched on a semiconductor substrate with a resist composition including at least one compound capable of forming a photoresist pattern by a photolithography process, and a free radical initiator. The free radical initiator is capable of being decomposed by a thermal process at a temperature equal to or higher than the glass transition temperature of the at least one compound. A lithography process is performed on the resist compound layer to form a photoresist pattern. The resist compound layer having the photoresist pattern formed therein is heated to a temperature equal to or higher than the glass transition temperature of the at least one compound, and wherein a partial cross-linking reaction in the resist composition occurs.

Abstract: A photosensitive polymer comprises a fluorinated ethylene glycol group and a chemically amplified resist composition including the photosensitive polymer.

Abstract: A method for forming a fine pattern in a semiconductor substrate, by coating a target layer to be etched on a semiconductor substrate with a resist composition including at least one compound capable of forming a photoresist pattern by a photolithography process, and a free radical initiator. The free radical initiator is capable of being decomposed by a thermal process at a temperature equal to or higher than the glass transition temperature of the at least one compound. A lithography process is performed on the resist compound layer to form a photoresist pattern. The resist compound layer having the photoresist pattern formed therein is heated to a temperature equal to or higher than the glass transition temperature of the at least one compound, and wherein a partial cross-linking reaction in the resist composition occurs.

Abstract: A method for forming a fine pattern in a semiconductor substrate, comprises the steps of (a) coating a target layer to be etched on a semiconductor substrate with a resist composition comprising at least one compound capable of forming a photoresist pattern by a photolithography process, and a free radical initiator, wherein the free radical initiator is one which is capable of being decomposed by a thermal process at a temperature equal to or higher than the glass transition temperature of the at least one compound, wherein said coating step results in forming a resist compound layer comprising the resist composition; (b) performing a lithography process on the resist compound layer to form a photoresist pattern of at least one opening having a first width, wherein the target layer is exposed through the first width; and (c) heating the resist compound layer having the photoresist pattern formed therein to a temperature equal to or higher than the glass transition temperature of the at least one compound, an

Abstract: A method for manufacturing a photoresist pattern that defines an opening having a small size, and a method for manufacturing a semiconductor device using the same are provided. A photoresist pattern defining the opening can be formed using a photoresist composition that includes either polymer mixture I containing a polymer A in which an acid-labile di-alkyl malonate group is pendant to the polymer backbone, and a polymer B in which a group that thermally decomposes at a temperature lower than the glass transition temperature of the polymer B itself is pendant to the polymer backbone, or polymer mixture II containing the polymer B and a polymer C including a (meth)acrylate as a monomer, as a main component. The size of the opening then can be reduced by thermal flowing the photoresist pattern.

Abstract: There is provided a polymer for use in a chemically amplified resist and represented by the following formula: where R′ is one selected from the group consisting of: in which R1 is one selected from the group consisting of —H and —CH3, and m and n are integers, and where R2 is one selected from the group consisting of —H and —CH3, R3 is one selected from the group consisting of —H and —CH3, R4 is one selected from the group consisting of —H, —CH3 and —CH2CH2OH, p, q and r are integers, p/(p+q+r) is 0.1˜0.7, q/(p+q+r) is 0.1˜0.7, and r/(p+q+r) is 0.1˜0.5.

Abstract: A method of etching a platinum group metal film uses a gas mixture containing argon (Ar), oxygen (O2) and halogen gases and a method of forming a lower electrode of a capacitor uses the etching method. The gas mixture contains O2, Ar, and a third component, preferably a halogen, e.g., chlorine (Cl2) or hydrogen bromide (HBr). In the method of forming a lower electrode, a conductive film containing a metal belonging to a platinum (Pt) group is formed on a semiconductor substrate, a hard mask partially exposing the conductive film is then formed on the conductive film. Then, the exposed conductive film is dry-etched using the hard mask as an etching mask and a three-component gas mixture containing argon (Ar) and oxygen (O2), to form a conductive film pattern beneath the hard mask, and the hard mask is then removed.

Abstract: A polymer for use in a chemically amplified photoresist and represented by the following formula: ##STR1## where R' is one selected from the group including: ##STR2## in which R.sub.1 is one selected from the group including --H and --CH.sub.3, m and n are integers, and m/(m+n)=0.1-0.