Abstract: A serial flash memory is provided with multiple configurable pins, at least one of which is selectively configurable for use in either single-bit serial data transfers or multiple-bit serial data transfers. In single-bit serial mode, data transfer is bit-by-bit through a pin. In multiple-bit serial mode, a number of sequential bits are transferred at a time through respective pins. The serial flash memory may have 16 or fewer pins, and even 8 or fewer pins, so that low pin count packaging such as the 8-pin or 16-pin SOIC package and the 8-contact MLP/QFN/SON package may be used. The availability of the single-bit serial type protocol enables compatibility with a number of existing systems, while the availability of the multiple-bit serial type protocol enables the serial flash memory to provide data transfer rates, in systems that can support them, that are significantly faster than available with standard serial flash memories.

Abstract: A serial flash memory is provided with multiple configurable pins, at least one of which is selectively configurable for use in either single-bit serial data transfers or multiple-bit serial data transfers. In single-bit serial mode, data transfer is bit-by-bit through a pin. In multiple-bit serial mode, a number of sequential bits are transferred at a time through respective pins. The serial flash memory may have 16 or fewer pins, and even 8 or fewer pins, so that low pin count packaging such as the 8-pin or 16-pin SOIC package and the 8-contact MLP/QFN/SON package may be used. The availability of the single-bit serial type protocol enables compatibility with a number of existing systems, while the availability of the multiple-bit serial type protocol enables the serial flash memory to provide data transfer rates, in systems that can support them, that are significantly faster than available with standard serial flash memories.

Abstract: The problem of bit disturb is reduced by discharging the floating bit lines of a nonvolatile memory array during programming. An illustrative virtual ground memory array uses single transistor floating gate type memory cells that are programmed using Fowler-Nordheim (“FN”) tunneling, highly conductive and lengthy bit lines, buried and relatively short sub-bit lines and a programming discharge circuit for controlling spurious voltages on the bit lines that can arise when some of the bit lines are left floating during programming. Discharge control transistor respectively coupled to the bit lines direct current into a discharge section. A discharge section may be provided for each bit line, or shared by all bit lines. The discharge section may be a fixed circuit section for use through the programming process or may be selected from multiple discharge options.

Abstract: An asymmetrical virtual ground single transistor floating gate memory cell has a floating gate that overlies a channel region in a p-well, the channel region lying between a heavily doped n+ drain region and a lightly doped n? source region. A heavily doped p+ region known as a “halo” is disposed in the channel adjacent the heavily doped n+ drain. The floating gate is spaced away from the channel region by a generally thin tunnel oxide. A lightly doped source with a graded source/channel junction reduces source side CHE generation. In one variation, a thicker oxide between the source and the floating gate reduces CHE injection from the source side. A heavily doped drain with a halo implant in the channel adjacent the drain enhances drain side CHE generation.

Abstract: In nonvolatile memory cell array, the memory cells of each sector are organized into groups of successive cells, the groups preferably being of the same size and preferably isolated from one another in both the row and column directions by a suitable isolation structure such as field dielectric or trench dielectric. Because of cell group isolation, each group of column lines may be decoded by its own relatively small program column select, which preferably is replicated in essentially identical form for all groups of column lines. While each program column select preferably is used to decode one group of column lines, larger program column selects may be used if desired to decode two or more groups of column lines. Read column selects may decode one or more groups of column lines as desired. The number of column lines decoded may the same as or different than the number of column lines decoded.

Abstract: An asymmetrical virtual ground single transistor floating gate memory cell has a floating gate that overlies a channel region in a p-well, the channel region lying between a heavily doped n+ drain region and a lightly doped n− source region. A heavily doped p+ region known as a “halo” is disposed in the channel adjacent the heavily doped n+ drain. The floating gate is spaced away from the channel region by a generally thin tunnel oxide. A lightly doped source with a graded source/channel junction reduces source side CHE generation. In one variation, a thicker oxide between the source and the floating gate reduces CHE injection from the source side. A heavily doped drain with a halo implant in the channel adjacent the drain enhances drain side CHE generation.

Abstract: A memory integrated circuit includes a nonvolatile memory array that is programmed in page mode. A volatile utility memory is connected to the memory array, and is at least a page in size so that an entire page of data that is either being programmed into or read from the memory array may be stored in the utility memory, thereby providing a single readily accessible and fully functional volatile memory that supports a variety of data operations such as nonvolatile memory programming, program-verify when supplemented with a program verify detector, data compare when supplemented with a comparator, and other operations including, in particular, operations that can benefit from the availability of a fast volatile memory to store an entire page of program data or read data.

Abstract: A serial flash integrated circuit is provided with an integrated error correction coding (“ECC”) system that is used with an integrated volatile page memory for fast automatic data correction. The ECC code has the capability of correcting any one or two bit errors that might occur on a page of the flash memory array. One bit corrections are done automatically in hardware during reads or transfer to the page memory, while two-bit corrections are handled in external software, firmware or hardware. The ECC system uses a syndrome generator for generating both write and read syndromes, and an error trapper to identify the location of single bit errors using very little additional chip space. The flash memory array may be refreshed from the page memory to correct any detected errors. Data status is made available to the application prior to the data. The use of the ECC is optional.

Abstract: In an array of nonvolatile memory cells, as many memory cells as desired and indeed even the entire array of memory cells may be placed in a single region of the bulk, illustratively a p-well. Peripheral circuitry is used to in effect section the memory array into blocks and groups of blocks, and to establish suitable biasing and counter-biasing within those blocks and groups during page or block erase operations to limit erase disturb. Each group is provided with its own set of voltage switches, which furnishes the bias voltages for the various modes of operation, including erase. Each of the voltage switches furnish either a large positive voltage when its group is selected, or a large negative voltage when its group is unselected. The size of the group is established as a compromise between degree of erase disturb and substrate area required for the voltage switches.

Abstract: A memory integrated circuit includes a nonvolatile memory array that is programmed in page mode. A volatile utility memory is connected to the memory array, and is at least a page in size so that an entire page of data that is either being programmed into or read from the memory array may be stored in the utility memory, thereby providing a single readily accessible and fully functional volatile memory that supports a variety of data operations such as nonvolatile memory programming, program-verify when supplemented with a program verify detector, data compare when supplemented with a comparator, and other operations including, in particular, operations that can benefit from the availability of a fast volatile memory to store an entire page of program data or read data.

Abstract: A convergence signal includes a series of voltage pulses used to perform a convergence procedure in one or more flash EEPROM memory cells (transistors). In one instance subsequent voltage pulses in the convergence signal each have a higher voltage than the preceding pulse. In another instance, subsequent voltage pulses in the convergence signal each have a longer duration than the preceding pulse. An integrated circuit includes an array of memory cells and an erase control unit which controls the application of the convergence signal to one or more memory cells. The integrated circuit may be either serial or parallel flash EEPROM in which bulk, sector, or page mode erasing is used.

Abstract: In nonvolatile memory cell array, the memory cells of each sector are organized into groups of successive cells, the groups preferably being of the same size and preferably isolated from one another in both the row and column directions by a suitable isolation structure such as field dielectric or trench dielectric. Because of cell group isolation, each group of column lines may be decoded by its own relatively small program column select, which preferably is replicated in essentially identical form for all groups of column lines. While each program column select preferably is used to decode one group of column lines, larger program column selects may be used if desired to decode two or more groups of column lines. Read column selects may decode one or more groups of column lines as desired. The number of column lines decoded may the same as or different than the number of column lines decoded.

Abstract: A convergence signal includes a series of voltage pulses used to perform a convergence procedure in one or more flash EEPROM memory cells (transistors). In one instance subsequent voltage pulses in the convergence signal each have a higher voltage than the preceding pulse. In another instance, subsequent voltage pulses in the convergence signal each have a longer duration than the preceding pulse. An integrated circuit includes an array of memory cells and an erase control unit which controls the application of the convergence signal to one or more memory cells. The integrated circuit may be either serial or parallel flash EEPROM in which bulk, sector, or page mode erasing is used.

Abstract: The present invention disclosed a method of erasing a flash memory comprising the step of applying a drain bias voltage for erasing to any one of said sectors; applying a drain bias voltage for erasing to a next sector before said sector is completely erased, whereby the sectors are erased sequentially.

Abstract: The present invention disclosed a method of reading a flash memory cell and a read voltage generating circuit which can perform a stable read operation regardless of a power supply voltage by applying a voltage of 2V to the source, a voltage of 0V to the drain, a power supply voltage Vcc to the select gate, and a clamping voltage output from the read voltage generating circuit to the control gate upon a read operation of a split gate flash memory cell.

Abstract: The present invention discloses a negative voltage drive circuit which does not takes an influence from the load capacitor or the power supply voltage drive circuit according to the present invention comprises a cross pumping circuit, a pumping unit block and circuit for supplying VCC or VSS power supply voltages for the pumping unit block.

Abstract: The present invention provides a flash memory device wherein memory cells in each of the memory cell blocks are divided into a plurality of memory cell groups. In each memory cell group, local bit lines are laid out connected by segmentation transistors. When selecting a memory cell, only a local bit line connected to a memory cell selected by an operation of the segmentation transistor is coupled to a global bit line so that the load to be applied to the bit lines is minimized during the read out operation.

Abstract: The present invention relates to a flash memory cell device having a repair circuit for replacing a fail cell of main memory cell arrays with a spare cell. The flash memory device according to the present invention comprises a main memory cell array, a redundancy cell block, a redundancy row decoder, a row decoder, a column decoder, a flag bit cell block, a flag cell transfer gate, a main sense amplifier and a flag sense amplifier.