Abstract: Embodiments of the disclosure generally relate to methods of removing etch by-products from the plasma processing chamber using carbon monoxide or carbon dioxide. In one embodiment, a method for dry cleaning a processing chamber includes exposing a chamber component disposed within the processing chamber in absence of a substrate disposed therein to a first cleaning gas mixture comprising carbon monoxide or carbon dioxide, wherein a portion of the chamber component has a film layer or residues deposited thereon, and the film layer or residues comprises a refractory metal and/or a metal silicide.

Abstract: In some embodiments, a method of forming a three dimensional NAND structure atop a substrate may include providing to a process chamber a substrate having alternating nitride layers and oxide layers or alternating polycrystalline silicon layers and oxide layers formed atop the substrate and a photoresist layer formed atop the alternating layers; etching the photoresist layer to expose at least a portion of the alternating nitride layers and oxide layers or alternating polycrystalline silicon layers and oxide layers; providing a process gas comprising sulfur hexafluoride (SF6), carbon tetrafluoride (CF4), and oxygen (O2) to the process chamber; providing an RF power of about 4 kW to about 6 kW to an RF coil to ignite the process gas to form a plasma; and etching through a desired number of the alternating layers to form a feature of a NAND structure.

Abstract: Embodiments of the disclosure generally relate to methods of removing etch by-products from the plasma processing chamber using carbon monoxide or carbon dioxide. In one embodiment, a method for dry cleaning a processing chamber includes exposing a chamber component disposed within the processing chamber in absence of a substrate disposed therein to a first cleaning gas mixture comprising carbon monoxide or carbon dioxide, wherein a portion of the chamber component has a film layer or residues deposited thereon, and the film layer or residues comprises a refractory metal and/or a metal silicide.

Abstract: Embodiments of the present invention provide methods to etching a recess channel in a semiconductor substrate, for example, a silicon containing material. In one embodiment, a method of forming a recess structure in a semiconductor substrate includes transferring a silicon substrate into a processing chamber having a patterned photoresist layer disposed thereon exposing a portion of the substrate, providing an etching gas mixture including a halogen containing gas and a Cl2 gas into the processing chamber, supplying a RF source power to form a plasma from the etching gas mixture, supplying a pulsed RF bias power in the etching gas mixture, and etching the portion of the silicon substrate exposed through the patterned photoresist layer in the presence of the plasma.

Abstract: In some embodiments, methods for forming a three dimensional NAND structure include providing to a process chamber a substrate having alternating nitride layers and oxide layers or alternating polycrystalline silicon consisting layers and oxide layers formed atop the substrate and a photoresist layer formed atop the alternating layers; etching the photoresist layer to expose at least a portion of the alternating layers; providing a process gas comprising sulfur hexafluoride and oxygen to the process chamber; providing RF power of about 4 kW to about 6 kW to a first inductive RF coil and a second inductive RF coil disposed proximate the process chamber to ignite the process gas to form a plasma, wherein a current flowing through the first inductive RF coil is out of phase with RF current flowing through the second inductive RF coil; and etching through a desired number of the alternating layers to form a feature.

Abstract: Embodiments of the present invention provide methods to etching a recess channel in a semiconductor substrate, for example, a silicon containing material. In one embodiment, a method of forming a recess structure in a semiconductor substrate includes transferring a silicon substrate into a processing chamber having a patterned photoresist layer disposed thereon exposing a portion of the substrate, providing an etching gas mixture including a halogen containing gas and a Cl2 gas into the processing chamber, supplying a RF source power to form a plasma from the etching gas mixture, supplying a pulsed RF bias power in the etching gas mixture, and etching the portion of the silicon substrate exposed through the patterned photoresist layer in the presence of the plasma.

Abstract: In some embodiments, a method of forming a three dimensional NAND structure atop a substrate may include providing to a process chamber a substrate having alternating nitride layers and oxide layers or alternating polycrystalline silicon layers and oxide layers formed atop the substrate and a photoresist layer formed atop the alternating layers; etching the photoresist layer to expose at least a portion of the alternating nitride layers and oxide layers or alternating polycrystalline silicon layers and oxide layers; providing a process gas comprising sulfur hexafluoride (SF6), carbon tetrafluoride (CF4), and oxygen (O2) to the process chamber; providing an RF power of about 4 kW to about 6 kW to an RF coil to ignite the process gas to form a plasma; and etching through a desired number of the alternating layers to form a feature of a NAND structure.

Abstract: In some embodiments, methods for forming a three dimensional NAND structure include providing to a process chamber a substrate having alternating nitride layers and oxide layers or alternating polycrystalline silicon consisting layers and oxide layers formed atop the substrate and a photoresist layer formed atop the alternating layers; etching the photoresist layer to expose at least a portion of the alternating layers; providing a process gas comprising sulfur hexafluoride and oxygen to the process chamber; providing RF power of about 4 kW to about 6 kW to a first inductive RF coil and a second inductive RF coil disposed proximate the process chamber to ignite the process gas to form a plasma, wherein a current flowing through the first inductive RF coil is out of phase with RF current flowing through the second inductive RF coil; and etching through a desired number of the alternating layers to form a feature.