Patents by Inventor Joo-Won Park

Joo-Won Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12004353
    Abstract: Semiconductor devices are provided. A semiconductor device includes a substrate and a stacked structure in which a plurality of insulating layers and a plurality of electrode layers are alternately stacked on the substrate. The semiconductor device includes a plurality of dummy channel structures that pass through the stacked structure. Moreover, the semiconductor device includes a contact structure in contact with at least one of the plurality of dummy channel structures adjacent thereto, and in contact with one of the plurality of electrode layers.
    Type: Grant
    Filed: April 12, 2023
    Date of Patent: June 4, 2024
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Joo Won Park, Kyeong Jin Park, Kwang Soo Kim
  • Publication number: 20240174855
    Abstract: Provided is a biodegradable polyester polymer comprising a polymerization reaction product of an aliphatic dicarboxylic acid, an C6-30 aromatic dicarboxylic acid, an aliphatic diol, and a branching agent, and wherein the biodegradable polyester polymer has a ratio of z-average molecular weight (Mz) to weight average molecular weight (Mw) (“Mz/Mw”) greater than 2 and an easy-tear film including the same. The biodegradable film has excellent mechanical properties to effectively protect a product inside the packaging but also be easily opened in a controlled manner without excessive force and at the same time, provide an environmentally-friendly alternative to non-degradable plastics.
    Type: Application
    Filed: June 8, 2023
    Publication date: May 30, 2024
    Inventors: Jeong Sun KIM, Su Jin IM, Sung Won LEE, Ki Yup KIM, Do Young KIM, Joo Hyun NAM, Ji Hae PARK
  • Publication number: 20240174795
    Abstract: Provided are a biodegradable aliphatic-aromatic polyester copolymer having excellent hydrolysis resistance and high viscosity which has a carboxyl end group (CEG) content of 15 mg KOH/g or less, a ratio (Mz/Mn) of a z-average molecular weight (Mz) to a number average molecular weight (Mn) of 3 to 15, and a melt index (MI) of 5 g/10 min or less as measured under conditions of a temperature of 190° C. and a load of 2.16 kg in accordance with ASTM D 1238. A method of preparing a biodegradable aliphatic-aromatic polyester copolymer is provided, including adding a chain extender and an anti-hydrolysis agent to an aliphatic-aromatic polyester pre-copolymer over time, whereby a significant viscosity rise and improvement of hydrolysis resistance may be implemented simultaneously.
    Type: Application
    Filed: August 11, 2023
    Publication date: May 30, 2024
    Inventors: Do Young Kim, Hyun Sik Yang, Yu Hyun Kim, Ki Yup Kim, Joo Hyun Nam, Chul Soon Moon, Ji Hae Park, Sung Won Lee, Jun Haeng Lee, Ho Seung Lee
  • Patent number: 11987667
    Abstract: Provided are a biodegradable aliphatic-aromatic polyester copolymer having excellent hydrolysis resistance and high viscosity which has a carboxyl end group (CEG) content of 15 mg KOH/g or less, a ratio (Mz/Mn) of a z-average molecular weight (Mz) to a number average molecular weight (Mn) of 3 to 15, and a melt index (MI) of 5 g/10 min or less as measured under conditions of a temperature of 190° C. and a load of 2.16 kg in accordance with ASTM D 1238. A method of preparing a biodegradable aliphatic-aromatic polyester copolymer is provided, including adding a chain extender and an anti-hydrolysis agent to an aliphatic-aromatic polyester pre-copolymer over time, whereby a significant viscosity rise and improvement of hydrolysis resistance may be implemented simultaneously.
    Type: Grant
    Filed: August 11, 2023
    Date of Patent: May 21, 2024
    Assignees: SK Innovation Co., Ltd., SK Geo Centric Co., Ltd.
    Inventors: Do Young Kim, Hyun Sik Yang, Yu Hyun Kim, Ki Yup Kim, Joo Hyun Nam, Chul Soon Moon, Ji Hae Park, Sung Won Lee, Jun Haeng Lee, Ho Seung Lee
  • Publication number: 20240128915
    Abstract: Disclosed is a motor driving apparatus including: a motor; an inverter including a switching element for driving the motor; a controller for controlling the switching element; a resolver including an excitation winding and a detection winding; and a resolver chip applying an excitation signal to the excitation winding by inputting a periodic signal from the controller, and receiving a feedback signal from the detection winding, wherein the resolver chip determines the number of rotations of the motor based on a change in a pulse width of a detection signal resulting from a comparison between a voltage of the feedback signal and a preset voltage, and output a signal to the inverter for setting an inertial driving control mode according to the number of rotations of the motor in a failure state of the controller.
    Type: Application
    Filed: October 17, 2023
    Publication date: April 18, 2024
    Applicant: HYUNDAI MOBIS CO., LTD.
    Inventors: Tae Hwan KANG, Hyung Min PARK, Joo Won PARK, Beom Cheol CHO, Yun Ho CHOI, Yeon Ho KIM, Won Hee JO
  • Publication number: 20240072294
    Abstract: A cylindrical secondary battery and a manufacturing method of a secondary battery are provided. A manufacturing method of a cylindrical secondary battery includes: winding an electrode assembly to expose a first electrode uncoated portion and a second electrode uncoated portion to opposite ends in a longitudinal direction; bending at least some portions of the first electrode uncoated portion and the second electrode uncoated portion of the electrode assembly in a direction by pressing the first electrode uncoated portion and the second electrode uncoated portion; welding electrode collector plates to ends of the bent first and second electrode uncoated portions; and inserting and sealing the electrode assembly into a cylindrical case.
    Type: Application
    Filed: August 16, 2023
    Publication date: February 29, 2024
    Inventors: Jung Hyun KIM, Joung Ku KIM, Byung Kyu PARK, Jung Hyun PARK, Joo Youn SHIN, Gye Won LEE, Dong Sub LEE, Hyun Ki JUNG
  • Publication number: 20240069524
    Abstract: Disclosed is an apparatus for excitation signal generation for a resolver. The apparatus includes a sine wave generator that generates a sine wave based on a square wave, an amplifier that amplifies the sine wave, a differential signal generator that converts, into a differential signal, the amplified sine wave, a driver that inputs the differential signal to a coil, and a processor that generates an excitation signal by increasing a voltage of the sine wave from a start voltage to a target voltage through at least one of the sine wave generator and the amplifier based on a transient current that flows into the coil in a transient response interval.
    Type: Application
    Filed: December 27, 2022
    Publication date: February 29, 2024
    Applicant: HYUNDAI MOBIS CO., LTD.
    Inventors: Yun Ho CHOI, Hyung Min PARK, Joo Won PARK, Yeon Ho KIM, Won Hee JO, Tae Hwan KANG, Beom Cheol CHO
  • Publication number: 20230323221
    Abstract: The present disclosure provides a method of treating waste plastic pyrolysis oil. The method includes a first step of washing waste plastic pyrolysis oil with water and then removing moisture; a second step of mixing the waste plastic pyrolysis oil from which the moisture is removed and a sulfur source to prepare a mixed oil; a third step of hydrotreating the mixed oil with hydrogen gas in the presence of a hydrotreating catalyst; a fourth step of separating the hydrotreated mixed oil into a liquid stream and a gas stream to obtain liquid pyrolysis oil; and a fifth step of recovering hydrogen gas from the separated gas stream and recycling the recovered hydrogen gas to the third step.
    Type: Application
    Filed: March 31, 2023
    Publication date: October 12, 2023
    Inventors: Yong Woon Kim, Byoung Kyu Kwak, Ja Cheol Koo, Dong Keun Kim, Young Seo Park, Joo Won Park, Byung Kook Ahn, Yun Hee Lee, Jae Heum Jung
  • Publication number: 20230323222
    Abstract: The present disclosure provides a method of treating waste plastic pyrolysis oil. The method includes a first step of washing waste plastic pyrolysis oil with water and then removing moisture; a second step of mixing the waste plastic pyrolysis oil from which the moisture is removed and a sulfur source to prepare a mixed oil; a third step of hydrotreating the mixed oil with hydrogen gas in the presence of a hydrotreating catalyst; a fourth step of separating the hydrotreated mixed oil into a liquid stream and a gas stream to obtain liquid pyrolysis oil; and a fifth step of recovering hydrogen gas from the separated gas stream and recycling the recovered hydrogen gas to the third step.
    Type: Application
    Filed: May 30, 2023
    Publication date: October 12, 2023
    Inventors: Yong Woon Kim, Byoung Kyu Kwak, Ja Cheol Koo, Dong Keun Kim, Young Seo Park, Joo Won Park, Byung Kook Ahn, Yun Hee Lee, Jae Heum Jung
  • Publication number: 20230309312
    Abstract: Semiconductor devices are provided. A semiconductor device includes a substrate and a stacked structure in which a plurality of insulating layers and a plurality of electrode layers are alternately stacked on the substrate. The semiconductor device includes a plurality of dummy channel structures that pass through the stacked structure. Moreover, the semiconductor device includes a contact structure in contact with at least one of the plurality of dummy channel structures adjacent thereto, and in contact with one of the plurality of electrode layers.
    Type: Application
    Filed: April 12, 2023
    Publication date: September 28, 2023
    Inventors: Joo Won Park, Kyeong Jin Park, Kwang Soo Kim
  • Patent number: 11765900
    Abstract: A vertical-type memory device includes a plurality of gate electrode layers spaced apart from one another and stacked on a substrate, and extending by different lengths in a first direction and forming a staircase structure, a first interlayer insulating layer covering the staircase structure of the plurality of gate electrode layers, and a plurality of gate contact plugs penetrating the interlayer insulating layer and respectively in contact with the gate electrode layers. The plurality of gate electrode layers include lower gate electrode layers disposed adjacently to the substrate, and upper gate electrode layers disposed on the lower gate electrode layers, so that the lower gate electrodes are between the substrate and the upper gate electrode layers. The plurality of gate contact plugs include lower gate contact plugs connected to the lower gate electrode layers, and upper gate contact plugs connected to the upper gate electrode layers.
    Type: Grant
    Filed: August 10, 2021
    Date of Patent: September 19, 2023
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Joo Won Park, Kyeong Jin Park
  • Publication number: 20230169950
    Abstract: A method of canceling road noise includes: receiving a first signal from an acceleration sensor disposed at a vehicle and a second signal from a microphone disposed at the vehicle; monitoring, based on the first and second signals, whether an abnormal event has occurred; determining, based on a result from monitoring whether the abnormal event has occurred, a plurality of parameter values for performing adaptive filtering; and performing, based on the determined parameter values, adaptive filtering to generating an output signal for noise canceling.
    Type: Application
    Filed: September 30, 2022
    Publication date: June 1, 2023
    Applicant: HYUNDAI MOBIS CO., LTD.
    Inventors: Se Yeong JANG, Joo Won PARK, Dong Hwan KIM
  • Patent number: 11659713
    Abstract: Semiconductor devices are provided. A semiconductor device includes a substrate and a stacked structure in which a plurality of insulating layers and a plurality of electrode layers are alternately stacked on the substrate. The semiconductor device includes a plurality of dummy channel structures that pass through the stacked structure. Moreover, the semiconductor device includes a contact structure in contact with at least one of the plurality of dummy channel structures adjacent thereto, and in contact with one of the plurality of electrode layers.
    Type: Grant
    Filed: October 6, 2021
    Date of Patent: May 23, 2023
    Inventors: Joo Won Park, Kyeong Jin Park, Kwang Soo Kim
  • Publication number: 20220028878
    Abstract: Semiconductor devices are provided. A semiconductor device includes a substrate and a stacked structure in which a plurality of insulating layers and a plurality of electrode layers are alternately stacked on the substrate. The semiconductor device includes a plurality of dummy channel structures that pass through the stacked structure. Moreover, the semiconductor device includes a contact structure in contact with at least one of the plurality of dummy channel structures adjacent thereto, and in contact with one of the plurality of electrode layers.
    Type: Application
    Filed: October 6, 2021
    Publication date: January 27, 2022
    Inventors: Joo Won Park, Kyeong Jin Park, Kwang Soo Kim
  • Patent number: 11225615
    Abstract: Provided is a method of desalting crude oil capable of effectively removing metal impurities in the crude oil and a rag layer which is formed in a crude oil desalting process.
    Type: Grant
    Filed: July 2, 2020
    Date of Patent: January 18, 2022
    Assignees: SK Innovation Co., Ltd., SK Energy Co., Ltd.
    Inventors: Yun Hee Lee, Joo Won Park
  • Publication number: 20210375922
    Abstract: A vertical-type memory device includes a plurality of gate electrode layers spaced apart from one another and stacked on a substrate, and extending by different lengths in a first direction and forming a staircase structure, a first interlayer insulating layer covering the staircase structure of the plurality of gate electrode layers, and a plurality of gate contact plugs penetrating the interlayer insulating layer and respectively in contact with the gate electrode layers. The plurality of gate electrode layers include lower gate electrode layers disposed adjacently to the substrate, and upper gate electrode layers disposed on the lower gate electrode layers, so that the lower gate electrodes are between the substrate and the upper gate electrode layers. The plurality of gate contact plugs include lower gate contact plugs connected to the lower gate electrode layers, and upper gate contact plugs connected to the upper gate electrode layers.
    Type: Application
    Filed: August 10, 2021
    Publication date: December 2, 2021
    Inventors: Joo Won PARK, Kyeong Jin PARK
  • Patent number: 11145669
    Abstract: Semiconductor devices are provided. A semiconductor device includes a substrate and a stacked structure in which a plurality of insulating layers and a plurality of electrode layers are alternately stacked on the substrate. The semiconductor device includes a plurality of dummy channel structures that pass through the stacked structure. Moreover, the semiconductor device includes a contact structure in contact with at least one of the plurality of dummy channel structures adjacent thereto, and in contact with one of the plurality of electrode layers.
    Type: Grant
    Filed: June 25, 2019
    Date of Patent: October 12, 2021
    Inventors: Joo Won Park, Kyeong Jin Park, Kwang Soo Kim
  • Patent number: 11094708
    Abstract: A vertical-type memory device includes a plurality of gate electrode layers spaced apart from one another and stacked on a substrate, and extending by different lengths in a first direction and forming a staircase structure, a first interlayer insulating layer covering the staircase structure of the plurality of gate electrode layers, and a plurality of gate contact plugs penetrating the interlayer insulating layer and respectively in contact with the gate electrode layers. The plurality of gate electrode layers include lower gate electrode layers disposed adjacently to the substrate, and upper gate electrode layers disposed on the lower gate electrode layers, so that the lower gate electrodes are between the substrate and the upper gate electrode layers. The plurality of gate contact plugs include lower gate contact plugs connected to the lower gate electrode layers, and upper gate contact plugs connected to the upper gate electrode layers.
    Type: Grant
    Filed: April 9, 2019
    Date of Patent: August 17, 2021
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Joo Won Park, Kyeong Jin Park
  • Publication number: 20210002561
    Abstract: Provided is a method of desalting crude oil capable of effectively removing metal impurities in the crude oil and a rag layer which is formed in a crude oil desalting process.
    Type: Application
    Filed: July 2, 2020
    Publication date: January 7, 2021
    Inventors: Yun Hee Lee, Joo Won Park
  • Publication number: 20200185400
    Abstract: Semiconductor devices are provided. A semiconductor device includes a substrate and a stacked structure in which a plurality of insulating layers and a plurality of electrode layers are alternately stacked on the substrate. The semiconductor device includes a plurality of dummy channel structures that pass through the stacked structure. Moreover, the semiconductor device includes a contact structure in contact with at least one of the plurality of dummy channel structures adjacent thereto, and in contact with one of the plurality of electrode layers.
    Type: Application
    Filed: June 25, 2019
    Publication date: June 11, 2020
    Inventors: Joo Won Park, Kyeong Jin Park, Kwang Soo Kim