Patents by Inventor Joo Yong Jung

Joo Yong Jung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8785963
    Abstract: Disclosed is a light emitting device. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer; an electrode layer on the light emitting structure; and a conductive support member on the electrode; wherein the conductive support member includes a center portion and a circumference portion surrounding the center portion, wherein a thickness of the circumference portion is lower than a thickness of the center portion, and wherein an area of a top surface of the electrode layer is larger than an area of a top surface of the second conductive semiconductor layer.
    Type: Grant
    Filed: July 11, 2012
    Date of Patent: July 22, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventor: Joo Yong Jung
  • Patent number: 8486732
    Abstract: Disclosed are a light emitting device, a method of manufacturing the same, a light emitting device package, and a lighting system. The light emitting device includes a conductive support member, a light emitting structure layer including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on the conductive support member, and an electrode on the light emitting structure layer. The conductive support member has a curved lateral surface recessed inward.
    Type: Grant
    Filed: April 27, 2011
    Date of Patent: July 16, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventors: Joo Yong Jung, Young Kyu Jeong
  • Patent number: 8421103
    Abstract: A semiconductor light emitting device is provided. The semiconductor light emitting device comprises a plurality of compound semiconductor layers, an electrode layer, a conductive support member and a first buffer member. The compound semiconductor layers comprise a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer. The electrode layer is disposed under the plurality of compound semiconductor layers. The conductive support member is disposed under the electrode layer. The first buffer member is embedded to be spaced apart, in the conductive support member.
    Type: Grant
    Filed: February 17, 2010
    Date of Patent: April 16, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventor: Joo Yong Jung
  • Publication number: 20120273825
    Abstract: Disclosed is a light emitting device. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer; an electrode layer on the light emitting structure; and a conductive support member on the electrode; wherein the conductive support member includes a center portion and a circumference portion surrounding the center portion, wherein a thickness of the circumference portion is lower than a thickness of the center portion, and wherein an area of a top surface of the electrode layer is larger than an area of a top surface of the second conductive semiconductor layer.
    Type: Application
    Filed: July 11, 2012
    Publication date: November 1, 2012
    Inventor: Joo Yong JUNG
  • Patent number: 8236581
    Abstract: Disclosed is a method of manufacturing a semiconductor light emitting device. The method includes forming a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on a substrate, forming an electrode layer on the light emitting structure, forming a conductive support member on the electrode layer, and planarizing a top surface of the conductive support member.
    Type: Grant
    Filed: February 16, 2010
    Date of Patent: August 7, 2012
    Assignee: LG Innotek Co., Ltd.
    Inventor: Joo Yong Jung
  • Publication number: 20100210058
    Abstract: Disclosed is a method of manufacturing a semiconductor light emitting device. The method includes forming a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on a substrate, forming an electrode layer on the light emitting structure, forming a conductive support member on the electrode layer, and planarizing a top surface of the conductive support member.
    Type: Application
    Filed: February 16, 2010
    Publication date: August 19, 2010
    Inventor: Joo Yong JUNG
  • Publication number: 20100207153
    Abstract: A semiconductor light emitting device is provided. The semiconductor light emitting device comprises a plurality of compound semiconductor layers, an electrode layer, a conductive support member and a first buffer member. The compound semiconductor layers comprise a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer. The electrode layer is disposed under the plurality of compound semiconductor layers. The conductive support member is disposed under the electrode layer. The first buffer member is embedded to be spaced apart, in the conductive support member.
    Type: Application
    Filed: February 17, 2010
    Publication date: August 19, 2010
    Inventor: Joo Yong JUNG