Abstract: A method of preparing an inorganic binder for medical use according to an embodiment of the present disclosure includes preparing a starting material using a-TCP powder and phosphate powder each of which has a predetermined particle size, producing a paste having a predetermined viscosity that is suitable for formation of a molded article having a predetermined shape by homogeneously mixing the starting material, adding water or saline to the homogeneously mixed starting material, and kneading the resulting mixture, subjecting the molded article to hydration reaction, and washing and drying the molded article having undergone the hydration reaction to obtain an inorganic binder containing OCP and HA crystal phases.

Abstract: The present disclosure relates to a composition for antiobesity, which contains a Gynostemma pentaphyllum tea or a Gynostemma pentaphyllum tea extract as an active ingredient. The composition of the present disclosure, which contains a Gynostemma pentaphyllum tea or a Gynostemma pentaphyllum tea extract as an active ingredient, is effective for preventing, alleviating or treating diabetes, obesity, muscle loss, etc. since it exhibits the efficacy of increasing AMPK activity, promoting beta oxidation, promoting glucose uptake, etc. In addition, since the composition of the present disclosure is derived from a natural product, it can be safely used as a drug, food, etc. without side effects.

Abstract: A method for forming a metal wiring layer of a semiconductor device, where a first layer having a recess region is formed on a semiconductor substrate. A second layer is formed on inner walls of the recess region and on an upper portion of the first layer. A third layer is formed on the second layer so as to have a smaller third layer thickness on the inner walls of the recess region than on the upper portion of the first layer. A fourth layer is then formed on the-third layer, providing a metal wiring layer with improved step coverage.

Abstract: Disclosed is a dynamic random access memory device (DRAM) having an increased cell capacitance and simplified manufacturing method thereof. The storage electrode the capacitor of the DRAM is connected to a semiconductor substrate through an opening formed in an insulating layer, and has a structure having an outer peripheral wall portion with a laterally extending bottom on the insulating layer and an inner central pillar portion including a hole of a certain depth within the opening in the center of the outer peripheral wall portion. Thus, cell capacitance is greatly increased within a limited unit cell area, its reliability is enhanced, and the manufacturing process is distinctly simplified.

Abstract: A method for manufacturing a double-cylindrical storage electrode of a capacitor of a semiconductor memory device, utilizes an outer etching mask for forming an outer cylinder and an inner etching mask for forming an inner cylinder. After forming a conductive structure on a semiconductor substrate, an outer etching mask for forming an outer cylinder and an inner etching mask for forming an inner cylinder are formed on the conductive structure. Then, the conductive structure is anisotropically etched using the outer and inner etching masks, thereby forming a double-cylindrical first electrode. Since a double-cylindrical storage electrode can be obtained from a single conductive layer, the influence of native oxidation circumvented. In addition, the double-cylindrical storage electrode of the capacitor according to the present invention decreases the risk of structural fragmenting because the electrode is obtained from one material layer, instead of a combination of layers as is conventionally-known.

Abstract: Disclosed is a dynamic random access memory device (DRAM) having an increased cell capacitance and simplified manufacturing method thereof. The storage electrode the capacitor of the DRAM is connected to a semiconductor substrate through an opening formed in an insulating layer, and has a structure having an outer peripheral wall portion with a laterally extending bottom on the insulating layer and an inner central pillar portion including a hole of a certain depth within the opening in the center of the outer peripheral wall portion. Thus, cell capacitance is greatly increased within a limited unit cell area, its reliability is enhanced, and the manufacturing process is distinctly simplified.