Abstract: An internal voltage generation circuit includes a plurality of active driving units configured to supply a plurality of active power supply voltages to a plurality of voltage terminals, respectively, in an active mode, and a common standby driving unit configured to commonly supply a standby power supply voltage to the plurality of voltage terminals in a standby mode.

Abstract: An internal voltage generation circuit includes a plurality of active driving units configured to supply a plurality of active power supply voltages to a plurality of voltage terminals, respectively, in an active mode, and a common standby driving unit configured to commonly supply a standby power supply voltage to the plurality of voltage terminals in a standby mode.

Abstract: A semiconductor memory device includes cells strings including memory cells and coupled between a common source line and bit lines, respectively, a peripheral circuit configured to store data in the memory cells or read data stored in the memory cells, a main voltage supply unit configured to generate operating voltages to be supplied to the peripheral circuit, a precharge voltage supply unit configured to generate a precharge voltage for precharging the bit lines, and a switching circuit configured to transfer the precharge voltage to the common source line and one of the bit lines when a bit line precharge operation is performed.