Abstract: A display device includes a substrate, a circuit layer, and an element layer. The circuit layer includes: light emitting pixel drivers; data lines; demux circuits outputting the data signal of the data lines based on a data mux signal supplied from a display driving circuit; and data transmission lines electrically connected between the display driving circuit and the demux circuits, and transmitting data mux signals of the demux circuits, respectively. The data transmission lines include: a first data transmission line electrically connected to a first demux circuit adjacent to an edge of the substrate in a first direction; and a second data transmission line electrically connected to a second demux circuit spaced further apart from the edge of the substrate than the first demux circuit in the first direction. The second data transmission line is electrically connected to a path compensation capacitor in the sub-region.

Abstract: A method for manufacturing a semiconductor package, for example a package-on-package type semiconductor device package. As non-limiting examples, various aspects of this disclosure provide high-yield methods for manufacturing a package-on-package type semiconductor package, or a portion thereof.

Abstract: In one example, an electronic device includes a substrate, an electronic component disposed over the substrate, and an encapsulant disposed over the substrate and the electronic component. A molded heat spreader can be disposed over the encapsulant and can comprise a heat spreader and a mold compound disposed around a lateral side of the heat spreader. A lateral side of the mold compound is coplanar with a lateral side of the encapsulant. Other examples and related methods are also disclosed herein.

Abstract: A method for manufacturing a semiconductor package, for example a package-on-package type semiconductor device package. As non-limiting examples, various aspects of this disclosure provide high-yield methods for manufacturing a package-on-package type semiconductor package, or a portion thereof.

Abstract: A method for manufacturing a semiconductor package, for example a package-on-package type semiconductor device package. As non-limiting examples, various aspects of this disclosure provide high-yield methods for manufacturing a package-on-package type semiconductor package, or a portion thereof.

Abstract: Provided are a method of transferring a tin sulfide film and a photoelectric device using the tin sulfide film. The method includes: forming a first tin sulfide film on a first substrate; placing a second substrate on the first tin sulfide film; and forming a second tin sulfide film bonded to a surface of the second substrate by transferring a portion of the first tin sulfide film to the second substrate through a rapid thermal process (RTP).

Abstract: An exemplary semiconductor device can comprise a die, a redistribution structure (RDS), an interconnect, a conductive strap, an encapsulant, and an EMI shield. The redistribution structure can comprise an RDS top surface coupled to the die bottom side. The interconnect can be coupled to the RDS bottom surface. The conductive strap can be coupled to the RDS, and can comprise a strap inner end coupled to the RDS bottom surface, and a strap outer end located lower than the RDS bottom surface. The encapsulant can encapsulate the conductive strap and the RDS bottom surface. The EMI shield can cover and contact the encapsulant sidewall and the strap outer end. Other examples and related methods are also disclosed herein.

Abstract: A method for manufacturing a semiconductor package, for example a package-on-package type semiconductor device package. As non-limiting examples, various aspects of this disclosure provide high-yield methods for manufacturing a package-on-package type semiconductor package, or a portion thereof.

Abstract: A method for manufacturing a semiconductor package, for example a package-on-package type semiconductor device package. As non-limiting examples, various aspects of this disclosure provide high-yield methods for manufacturing a package-on-package type semiconductor package, or a portion thereof.

Abstract: An exemplary semiconductor device can comprise a die, a redistribution structure (RDS), an interconnect, a conductive strap, an encapsulant, and an EMI shield. The redistribution structure can comprise an RDS top surface coupled to the die bottom side. The interconnect can be coupled to the RDS bottom surface. The conductive strap can be coupled to the RDS, and can comprise a strap inner end coupled to the RDS bottom surface, and a strap outer end located lower than the RDS bottom surface. The encapsulant can encapsulate the conductive strap and the RDS bottom surface. The EMI shield can cover and contact the encapsulant sidewall and the strap outer end. Other examples and related methods are also disclosed herein.

Abstract: Provided are a method of transferring a tin sulfide film and a photoelectric device using the tin sulfide film. The method includes: forming a first tin sulfide film on a first substrate; placing a second substrate on the first tin sulfide film; and forming a second tin sulfide film bonded to a surface of the second substrate by transferring a portion of the first tin sulfide film to the second substrate through a rapid thermal process (RTP).

Abstract: A method for manufacturing a semiconductor package, for example a package-on-package type semiconductor device package. As non-limiting examples, various aspects of this disclosure provide high-yield methods for manufacturing a package-on-package type semiconductor package, or a portion thereof.

Abstract: An exemplary semiconductor device can comprise a die, a redistribution structure (RDS), an interconnect, a conductive strap, an encapsulant, and an EMI shield. The redistribution structure can comprise an RDS top surface coupled to the die bottom side. The interconnect can be coupled to the RDS bottom surface. The conductive strap can be coupled to the RDS, and can comprise a strap inner end coupled to the RDS bottom surface, and a strap outer end located lower than the RDS bottom surface. The encapsulant can encapsulate the conductive strap and the RDS bottom surface. The EMI shield can cover and contact the encapsulant sidewall and the strap outer end. Other examples and related methods are also disclosed herein.

Abstract: An exemplary semiconductor device can comprise a die, a redistribution structure (RDS), an interconnect, a conductive strap, an encapsulant, and an EMI shield. The redistribution structure can comprise an RDS top surface coupled to the die bottom side. The interconnect can be coupled to the RDS bottom surface. The conductive strap can be coupled to the RDS, and can comprise a strap inner end coupled to the RDS bottom surface, and a strap outer end located lower than the RDS bottom surface. The encapsulant can encapsulate the conductive strap and the RDS bottom surface. The EMI shield can cover and contact the encapsulant sidewall and the strap outer end. Other examples and related methods are also disclosed herein.

Abstract: A method for manufacturing a semiconductor package, for example a package-on-package type semiconductor device package. As non-limiting examples, various aspects of this disclosure provide high-yield methods for manufacturing a package-on-package type semiconductor package, or a portion thereof.

Abstract: An exemplary semiconductor device can comprise a die, a redistribution structure (RDS), an interconnect, a conductive strap, an encapsulant, and an EMI shield. The redistribution structure can comprise an RDS top surface coupled to the die bottom side. The interconnect can be coupled to the RDS bottom surface. The conductive strap can be coupled to the RDS, and can comprise a strap inner end coupled to the RDS bottom surface, and a strap outer end located lower than the RDS bottom surface. The encapsulant can encapsulate the conductive strap and the RDS bottom surface. The EMI shield can cover and contact the encapsulant sidewall and the strap outer end. Other examples and related methods are also disclosed herein.

Abstract: A semiconductor package that includes EMI shielding and a fabricating method thereof are disclosed. In one embodiment, the fabricating method of a semiconductor package includes forming a substrate, attaching semiconductor devices to a top portion of the substrate, encapsulating the semiconductor devices using an encapsulant, forming a trench in the encapsulant, and forming a shielding layer on a surface of the encapsulant.

Abstract: A transparent photoelectric element and a method for fabricating the same are provided. The method includes providing a transparent substrate, forming a transparent conductive film on the transparent substrate at room temperature, forming an n-type oxide semiconductor film on the transparent conductive film and forming a p-type nickel oxide film having a quantum dot structure on the n-type oxide semiconductor film through reactive sputtering at room temperature, the reactive sputtering including oxygen and argon, a ratio of oxygen being smaller than a ratio of argon.

Abstract: A method for manufacturing a semiconductor package, for example a package-on-package type semiconductor device package. As non-limiting examples, various aspects of this disclosure provide high-yield methods for manufacturing a package-on-package type semiconductor package, or a portion thereof.

Abstract: A method for manufacturing a semiconductor package, for example a package-on-package type semiconductor device package. As non-limiting examples, various aspects of this disclosure provide high-yield methods for manufacturing a package-on-package type semiconductor package, or a portion thereof.