Abstract: Provided are a glass transportation apparatus and a system including the glass transportation apparatus for manufacturing a multi-pane glass unit. The glass transportation apparatus includes a plate including a main surface facing a main surface of a glass pane, a gas blowing device configured to blow a gas towards the main surface of the glass pane such that the main surface of the glass pane is spaced apart from the main surface of the plate, and a conveyer including a belt having an upper surface and a plurality of pulleys configured to circulate the belt.

Abstract: A multi-pane glass unit includes a first outer glass pane and a second outer glass pane facing each other, a first inner glass pane between the first outer glass pane and the second outer glass pane, a first spacer located between the first outer glass pane and the first inner glass pane, and a second spacer located between the second outer glass pane and the first inner glass pane.

Abstract: Provided is an apparatus for manufacturing a multi-pane glass unit. The apparatus includes: a first plate configured to hold a first glass pane; a second plate configured to hold a second glass pane such that the second glass pane faces the first glass pane; and a conveyer including a first portion configured to convey the first glass pane onto the first plate and a second portion configured to convey the second glass onto the second plate.

Abstract: An insulating glazing unit is provided, including: a first glass pane and a second glass pane; an intermediate glass pane; a first spacer and a second spacer; and a holder holding together the first glass pane, the second glass pane, the intermediate glass pane, the first spacer, and the second spacer. In the insulating glazing unit, a thickness of the intermediate glass pane is less than the first glass pane and the second glass pane, too and a composition of the intermediate glass pane is different from the first glass pane the second glass pane.

Abstract: An apparatus for easily measuring the quality of gallium nitride (GaN) in normal conditions such as an atmospheric pressure and room temperature. The apparatus includes a light source disposed above a GaN substrate and a measuring unit disposed above the GaN substrate. The light source emits light to a surface of the GaN substrate. The measuring unit measures the quality of the GaN substrate based on the spectrum of light radiated from the GaN substrate.

Abstract: A method of manufacturing a gallium nitride (GaN) substrate and a GaN substrate manufactured by the same. The method includes the steps of growing a GaN film on a base substrate and separating the base substrate from the GaN film. The step of growing the GaN film includes forming pits in the GaN film, the pits inducing an inversion domain boundary to be formed inside the GaN film. The GaN substrate can have a predetermined thickness with which it can be handled during layer transfer (LT) processing, and the warping of the GaN substrate can be minimized, thereby preventing cracks due to warping.

Abstract: A method of manufacturing a gallium nitride (GaN) substrate and a GaN substrate manufactured thereby. The method includes the steps of growing an aluminum nitride nucleation layer on a base substrate, growing a first gallium nitride film on the base substrate on which the aluminum nitride nucleation layer has been grown, the first gallium nitride film having a first content ratio of nitrogen to gallium, and growing a second gallium nitride film on the first gallium nitride film, the second gallium nitride film having a second content ratio of nitrogen to gallium which is lower than the first content ratio. Self-separation between the base substrate and the GaN substrate is possible during the growth process, thereby precluding mechanical separation, increasing a self-separation area, and minimizing the occurrence of warping.

Abstract: A method of manufacturing a free-standing gallium nitride (GaN) substrate, by which a free-standing GaN substrate can be manufactured without warping or cracks. The method includes the steps of collecting polycrystalline GaN powder that is deposited in a reactor or on a susceptor in a process of growing single crystalline GaN, loading the collected polycrystalline GaN powder into a forming mold, preparing a polycrystalline GaN substrate by sintering the loaded polycrystalline GaN powder, and forming a single crystalline GaN layer by growing single crystalline GaN over the polycrystalline GaN substrate. It is possible to reduce warping and cracks that are caused, due to the difference in the coefficient of thermal expansion, during the growth or cooling of single crystalline GaN in the process of manufacturing the free-standing GaN substrate.