Abstract: One aspect of the present disclosure is a pharmaceutical composition which includes (R)—N-[1-(3,5-difluoro-4-methansulfonylamino-phenyl)-ethyl]-3-(2-propyl-6-trifluoromethyl-pyridin-3-yl)-acrylamide as a first component and a cellulosic polymer as a second component, wherein the composition of one aspect of the present disclosure has a formulation characteristic in which crystal formation is delayed for a long time.

Abstract: To program in a nonvolatile memory device including a cell region including first metal pads and a peripheral region including second metal pads and vertically connected to the cell region by the first metal pads and the second metal pads, a memory block is provided with a plurality of sub blocks disposed in a vertical direction where the memory block includes a plurality of cell strings each including a plurality of memory cells connected in series and disposed in the vertical direction. A plurality of intermediate switching transistors are disposed in a boundary portion between two adjacent sub blocks in the vertical direction. Each of the plurality of intermediate switching transistors is selectively activated based on a program address during a program operation. The selectively activating each of the plurality of intermediate switching transistors includes selectively turning on one or more intermediate switching transistors in a selected cell string based on the program address.

Abstract: An accumulator includes an accumulating adder configured to add input data and latch data to output accumulation data, a selector configured to receive external data and the accumulation data, and output one of the external data and the accumulation data as selection data, and a latch circuit configured to latch the selection data output from the selector to transmit latched selection data into the accumulating adder as the latch data.

Abstract: A semiconductor device includes a control circuit configured to generate a buffer enable signal that is enabled when patterns of a strobe signal and an inverted strobe signal are preset patterns after the start of a write operation and configured to generate an internal strobe signal by dividing frequencies of an input strobe signal and an inverted input strobe signal, and a buffer circuit configured to generate the input strobe signal and the inverted input strobe signal from the strobe signal and the inverted strobe signal that are received when the buffer enable signal is enabled and configured to generate transfer data by receiving data for performing the write operation when the buffer enable signal is enabled.

Abstract: Provided is a power supply apparatus for self-powered device including a power module configured to supply first driving power, a sensor module configured to be operated by the first driving power, and an energy harvesting module configured to select energy power with a higher signal intensity from among energy power from energy sources and harvest energy using the selected energy power as second driving power.

Abstract: A processing-in-memory (PIM) device includes a plurality of multiplication and accumulation (MAC) units, each of the MAC units including a memory bank and a MAC operator, and a control circuit configured to control the plurality of MAC units to perform an all MAC mode operation in which MAC operations are performed in all MAC units, among the plurality of MAC units, or a dispersion MAC mode operation in which the MAC operations are performed in some MAC units, among the plurality of MAC units.

Abstract: An accumulator includes an accumulating adder configured to add input data and latch data to output accumulation data, a selector configured to receive external data and the accumulation data, and output one of the external data and the accumulation data as selection data, and a latch circuit configured to latch the selection data output from the selector to transmit latched selection data into the accumulating adder as the latch data.

Abstract: A secondary battery includes an electrode assembly, a case having a receiving portion with bottom and side surfaces accommodating the electrode assembly, and a terrace at an edge of the receiving portion, a cover covering the case, and first and second electrode tabs drawn out from the electrode assembly, wherein a first boundary is defined where the bottom surface and a side surface meet to form a first curved surface, a second boundary is defined where two adjacent side surfaces meet to form a second curved surface, a third boundary is defined where a side surface and the terrace portion meet to form a third curved surface, and a clearance is defined as a distance between a point where a curved surface leading from the side surface to the bottom surface starts and a point where a curved surface leading from the side surface to the terrace portion ends.

Abstract: A secondary battery includes: an electrode assembly including a first electrode substrate tab and a second electrode substrate tab; a case accommodating the electrode assembly; strip terminals electrically connected to the first electrode substrate tab and the second electrode substrate tab, respectively, and extending to an outside of the case; and conductive adhesive members around connection portions between the first electrode substrate tab and a strip terminal of the strip terminals and the second electrode substrate tab and another strip terminal of the strip terminals, respectively.

Abstract: A substrate processing system for selectively etching a layer on a substrate includes an upper chamber region, an inductive coil arranged around the upper chamber region and a lower chamber region including a substrate support to support a substrate. A gas distribution device is arranged between the upper chamber region and the lower chamber region and includes a plate with a plurality of holes. A cooling plenum cools the gas distribution device and a purge gas plenum directs purge gas into the lower chamber. A surface to volume ratio of the holes is greater than or equal to 4. A controller selectively supplies an etch gas mixture to the upper chamber and a purge gas to the purge gas plenum and strikes plasma in the upper chamber to selectively etch a layer of the substrate relative to at least one other exposed layer of the substrate.

Abstract: A memory device includes a first comparison circuit suitable for comparing read data read from a plurality of memory cells with write data written in the memory cells and outputting a comparison result, a path selection circuit suitable for transferring selected data selected among the read data and test data as read path data based on the comparison result of the first comparison circuit, and an output data alignment circuit suitable for converting the read path data into serial data to output the serial data as output data.

Abstract: A secondary battery including an electrode assembly including a first electrode plate having a first electrode substrate tab thereon, a second electrode plate having a second electrode substrate tab thereon, and a separator between the first electrode plate and the second electrode plate; a pouch accommodating the electrode assembly; and strip terminals respectively welded to the first electrode substrate tab and the second electrode substrate tab, wherein the first electrode substrate tab and one of the strip terminals are welded to one another in a state in which the first electrode substrate tab and the one strip terminal are bent at least once, and the second electrode substrate tab and another of the strip terminals are welded to one another in a state in which the second electrode substrate tab and the other strip terminal are bent at least once.

Abstract: A substrate processing system for selectively etching a layer on a substrate includes an upper chamber region, an inductive coil arranged around the upper chamber region and a lower chamber region including a substrate support to support a substrate. A gas distribution device is arranged between the upper chamber region and the lower chamber region and includes a plate with a plurality of holes. A cooling plenum cools the gas distribution device and a purge gas plenum directs purge gas into the lower chamber. A surface to volume ratio of the holes is greater than or equal to 4. A controller selectively supplies an etch gas mixture to the upper chamber and a purge gas to the purge gas plenum and strikes plasma in the upper chamber to selectively etch a layer of the substrate relative to at least one other exposed layer of the substrate.

Abstract: A technology related to an electronic circuit, specifically, a phase locked loop or a frequency synthesizing apparatus, is disclosed. The frequency synthesizing apparatus includes an injection locked frequency divider and a replica frequency divider having the same circuit configuration as the injection locked frequency divider. A control value required for self-oscillating at a target frequency using the replica frequency divider is determined. When the injection locked frequency divider fails injection locking on a first attempt, the injection locking may be attempted using the determined control value. On the first attempt, the control value of the injection locked frequency divider may be determined and stored in advance according to a temperature and a supply voltage.

Abstract: A technology related to an electronic circuit, specifically, a phase locked loop or a frequency synthesizing apparatus, is disclosed. The frequency synthesizing apparatus includes an injection locked frequency divider and a replica frequency divider having the same circuit configuration as the injection locked frequency divider. A control value required for self-oscillating at a target frequency using the replica frequency divider is determined. When the injection locked frequency divider fails injection locking on a first attempt, the injection locking may be attempted using the determined control value. On the first attempt, the control value of the injection locked frequency divider may be determined and stored in advance according to a temperature and a supply voltage.

Abstract: A power management apparatus, includes an artificial intelligence (Al) controller configured to monitor a user pattern, based on frequency band selection information of all users using a base station, to predict the user pattern, and a DC-DC converter configured to output a supply voltage based on the predicted user pattern.

Abstract: The present invention relates to an integrated circuit for processing biosignals, a biosignal processing apparatus, and a biosignal processing system, and the integrated circuit includes: a digital conversion unit for converting an analog biosignal input through a biosignal input terminal into a digital biodata; and an AI block for processing a plurality of biodata converted through the digital conversion unit according to an artificial intelligence processing flow, and outputting a result data according to processing of the plurality of biodata.

Abstract: A memory device includes a first comparison circuit suitable for comparing read data read from a plurality of memory cells with write data written in the memory cells and outputting a comparison result, a path selection circuit suitable for transferring selected data selected among the read data and test data as read path data based on the comparison result of the first comparison circuit, and an output data alignment circuit suitable for converting the read path data into serial data to output the serial data as output data.

Abstract: A method for selectively etching one exposed material of a substrate relative to another exposed material of the substrate includes a) arranging the substrate in a processing chamber; b) setting a chamber pressure; c) setting an RF frequency and an RF power for RF plasma; d) supplying a plasma gas mixture to the processing chamber; e) striking the RF plasma in the processing chamber in one of an electric mode (E-mode) and a magnetic mode (H-mode); and f) during plasma processing of the substrate, changing at least one of the chamber pressure, the RF frequency, the RF power and the plasma gas mixture to switch from the one of the E-mode and the H-mode to the other of the E-mode and the H-mode.

Abstract: A chamber member of a plasma source is provided and includes a sidewall, a transition member, a top wall and an injector connecting member. The sidewall is cylindrically-shaped and surrounds an upper region of a substrate processing chamber. The transition member is connected to the sidewall. The top wall is connected to the transition member. The injector connecting member is connected to the top wall, positioned vertically higher than the sidewall, and configured to connect to a gas injector. Gas passes through the injector connecting member via the gas injector and into the upper region of the substrate processing chamber. A center height to low inner diameter ratio of the chamber member is 0.25-0.5 and/or a center height to outer height ratio of the chamber member is 0.4-0.85.