Patents by Inventor Joon-Hong Park

Joon-Hong Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190246139
    Abstract: An apparatus for processing a video signal and method thereof are disclosed. The present invention includes receiving prediction mode information, interpolating information and a residual of a current block, reconstructing an interpolating pixel using the interpolating information and a neighbor block, and reconstructing the current block using the interpolating pixel, the prediction mode information and the residual, wherein the interpolating information is generated based on a location of the current block. According to an apparatus and method for processing a video signal, high reconstruction rate can be obtained by improving the related art method having limited intra prediction modes available for a current block located on a boundary area of a picture in encoding in a manner of reconstructing and using an interpolating pixel based on interpolating information.
    Type: Application
    Filed: April 19, 2019
    Publication date: August 8, 2019
    Inventors: Byeong Moon JEON, Seung Wook PARK, Joon Young PARK, Jae Won SUNG, Hyun Wook PARK, Jee Hong LEE, Jin Young LEE, Dong San JUN, Yinji PIAO
  • Publication number: 20190221654
    Abstract: Provided are methods and apparatuses for removing a polysilicon layer on a wafer, where the wafer can include a nitride layer, a low-k dielectric layer, an oxide layer, and other films. A plasma of a hydrogen-based species and a fluorine-based species is generated in a remote plasma source, and the wafer is exposed to the plasma at a relatively low temperature to limit the formation of solid byproduct. In some implementations, the wafer is maintained at a temperature below about 60° C. The polysilicon layer is removed at a very high etch rate, and the selectivity of polysilicon over the nitride layer and the oxide layer is very high. In some implementations, the wafer is supported on a wafer support having a plurality of thermal zones configured to define a plurality of different temperatures across the wafer.
    Type: Application
    Filed: March 26, 2019
    Publication date: July 18, 2019
    Inventors: Dengliang Yang, Kwame Eason, Faisal Yaqoob, Joon Hong Park
  • Publication number: 20190198117
    Abstract: To program in a nonvolatile memory device, a memory block is provided with a plurality of sub blocks disposed in a vertical direction where the memory block includes a plurality of cell strings each including a plurality of memory cells connected in series and disposed in the vertical direction. A plurality of intermediate switching transistors are disposed in a boundary portion between two adjacent sub blocks in the vertical direction. Each of the plurality of intermediate switching transistors is selectively activated based on a program address during a program operation. The selectively activating each of the plurality of intermediate switching transistors includes selectively turning on one or more intermediate switching transistors in a selected cell string based on the program address.
    Type: Application
    Filed: September 25, 2018
    Publication date: June 27, 2019
    Inventors: Chang-Yeon YU, Kui-Han KO, Il-Han PARK, June-Hong PARK, Joo-Yong PARK, Joon-Young PARK, Bong-Soon LIM
  • Publication number: 20190161109
    Abstract: A steering column assembly for a vehicle may include a buffer structure provided between a steering housing and a steering shaft inserted into the steering housing to distribute vibration applied thereto and to compensate for the distortion of the steering shaft and a clearance of the steering shaft with the steering housing, wherein a support structure is also provided to secure the support performance of the steering housing with respect to a mounting bracket in the event of a tilt and a longitudinal motion of the steering housing, ensuring the horizontal rigidity of the steering housing and reducing vibration applied thereto.
    Type: Application
    Filed: November 28, 2018
    Publication date: May 30, 2019
    Applicants: Hyundai Motor Company, Kia Motors Corporation, MANDO Corporation
    Inventors: Hyoung Jun Ahn, Joon Mo Park, Beom Soo Kim, Byung Woo Noh, Ji Yong Yim, Sung Hun Park, Dong Hun Shin, Ki Hong Kim
  • Patent number: 10306259
    Abstract: An apparatus for processing a video signal and method thereof are disclosed. The present invention includes receiving prediction mode information, interpolating information and a residual of a current block, reconstructing an interpolating pixel using the interpolating information and a neighbor block, and reconstructing the current block using the interpolating pixel, the prediction mode information and the residual, wherein the interpolating information is generated based on a location of the current block. According to an apparatus and method for processing a video signal, high reconstruction rate can be obtained by improving the related art method having limited intra prediction modes available for a current block located on a boundary area of a picture in encoding in a manner of reconstructing and using an interpolating pixel based on interpolating information.
    Type: Grant
    Filed: October 31, 2017
    Date of Patent: May 28, 2019
    Assignees: LG Electronics Inc., Korea Advanced Institute of Science and Technology
    Inventors: Byeong Moon Jeon, Seung Wook Park, Joon Young Park, Jae Won Sung, Hyun Wook Park, Jee Hong Lee, Jin Young Lee, Dong San Jun, Yinji Piao
  • Publication number: 20190145436
    Abstract: Provided are embodiments of a pressure-compensated load transfer device that includes a plate having a first shaft vertically installed on one side and a second shaft vertically installed on the other side to be coaxial with the first shaft. Also included is a first bellows having an opening in one side to surround the first shaft, with the other side thereof being fixed to the one side of the plate. Further included is a plurality of second bellows each having an opening in one end, with the other end thereof being attached to the other side of the plate. A housing is also included, and the housing includes a high-pressure working hole communicating with the opening of the first bellows and a high-pressure channel coplanar with the high-pressure working hole and communicating with the openings of the second bellows. The plate is back-and-forth movably received in the housing.
    Type: Application
    Filed: January 11, 2019
    Publication date: May 16, 2019
    Applicant: KEPCO NUCLEAR FUEL CO., LTD.
    Inventors: Kyoung-hong Kim, Jin-seon Kim, Jong-sung Yoo, Kyeong-lak Jeon, Kyong-bo Eom, Joon-kyoo Park, Young-ik Yoo, Oh-joon Kwon, Joong-jin Kim, Tae-kwon Lee
  • Patent number: 10283615
    Abstract: Provided are methods and apparatuses for removing a polysilicon layer on a wafer, where the wafer can include a nitride layer, a low-k dielectric layer, an oxide layer, and other films. A plasma of a hydrogen-based species and a fluorine-based species is generated in a remote plasma source, and the wafer is exposed to the plasma at a relatively low temperature to limit the formation of solid byproduct. In some implementations, the wafer is maintained at a temperature below about 60° C. The polysilicon layer is removed at a very high etch rate, and the selectivity of polysilicon over the nitride layer and the oxide layer is very high. In some implementations, the wafer is supported on a wafer support having a plurality of thermal zones configured to define a plurality of different temperatures across the wafer.
    Type: Grant
    Filed: November 11, 2015
    Date of Patent: May 7, 2019
    Assignee: Novellus Systems, Inc.
    Inventors: Dengliang Yang, Kwame Eason, Faisal Yaqoob, Joon Hong Park
  • Patent number: 10192751
    Abstract: A method for selectively etching a silicon nitride layer on a substrate includes arranging a substrate on a substrate support of a substrate processing chamber. The substrate processing chamber includes an upper chamber region, an inductive coil arranged outside of the upper chamber region, a lower chamber region including the substrate support and a gas dispersion device. The gas dispersion device includes a plurality of holes in fluid communication with the upper chamber region and the lower chamber region. The method includes supplying an etch gas mixture to the upper chamber region and striking inductively coupled plasma in the upper chamber region by supplying power to the inductive coil. The etch gas mixture etches silicon nitride, promotes silicon dioxide passivation and promotes polysilicon passivation. The method includes selectively etching the silicon nitride layer on the substrate and extinguishing the inductively coupled plasma after a predetermined period.
    Type: Grant
    Filed: September 21, 2016
    Date of Patent: January 29, 2019
    Assignee: LAM RESEARCH CORPORATION
    Inventors: Dengliang Yang, Faisal Yaqoob, Pilyeon Park, Helen H. Zhu, Joon Hong Park
  • Patent number: 10147588
    Abstract: A system is provided and includes a substrate processing chamber, one or more injectors, and a controller. The one or more injectors inject an electronegative gas, a baseline electropositive gas, and an additional electropositive gas into the substrate processing chamber. The electronegative gas includes an etch precursor. The additional electropositive gas mixes with and increases electron density of a plasma in the substrate processing chamber. The controller is configured to set an amount, flow rate or pressure of the additional electropositive gas based on at least one of a pressure of the electronegative gas or an electron affinity level of the additional electropositive gas.
    Type: Grant
    Filed: February 8, 2017
    Date of Patent: December 4, 2018
    Assignee: LAM RESEARCH CORPORATION
    Inventors: Kwame Eason, James Eugene Caron, Ivelin Angelov, Joon Hong Park, Dengliang Yang
  • Publication number: 20180269070
    Abstract: A substrate processing system for selectively etching a layer on a substrate includes an upper chamber region, an inductive coil arranged around the upper chamber region and a lower chamber region including a substrate support to support a substrate. A gas distribution device is arranged between the upper chamber region and the lower chamber region and includes a plate with a plurality of holes. A cooling plenum cools the gas distribution device and a purge gas plenum directs purge gas into the lower chamber. A surface to volume ratio of the holes is greater than or equal to 4. A controller selectively supplies an etch gas mixture to the upper chamber and a purge gas to the purge gas plenum and strikes plasma in the upper chamber to selectively etch a layer of the substrate relative to at least one other exposed layer of the substrate.
    Type: Application
    Filed: March 14, 2017
    Publication date: September 20, 2018
    Inventors: Kwame Eason, Dengliang Yang, Pilyeon Park, Faisal Yaqoob, Joon Hong Park, Mark Kawaguchi, Ivelin Angelov, Ji Zhu, Hsiao-Wei Chang
  • Patent number: 10066790
    Abstract: The present invention relates to a fluorescent lamp-type LED lighting device including: a case part formed to be elongated in one direction and having an open bottom surface which provides a reflection space on the inner side; a cover part provided on the bottom surface of the case part so that the light which is reflected and diffused in the case part is emitted; and multiple LEDs which emit the light from the cover part and the inner side of the case part such that the light is reflected and diffused on the inner side of the case part. According to the present invention, the LED light is emitted toward an indoor ceiling side, the reflection space is provided so as to reflect and diffuse the emitted LED light, and the light is emitted through a bottom surface part. Accordingly, no additional diffusion plate for surface emission is used and thus optical efficiency can be increased.
    Type: Grant
    Filed: June 24, 2015
    Date of Patent: September 4, 2018
    Assignee: GIGATERA INC.
    Inventors: Duk-Yong Kim, Min-Soo Kim, Joon-Hong Park, Sung-Hoon Yoon
  • Publication number: 20180158692
    Abstract: Apparatuses for processing substrates are provided herein. Apparatuses include a plasma etch chamber having a showerhead and pedestal for holding a substrate having silicon nitride, at least one outlet for coupling to a vacuum, a solid non-functional silicon source, and a plasma generator. A solid silicon source may be upstream of a substrate, such as at or near a showerhead of a process chamber, or in a remote plasma generator. Apparatuses also include a plasma etch chamber, at least one outlet, a solid non-functional silicon source, a plasma generator, and a controller for controlling operations including instructions for causing introduction of a fluorinating gas and causing ignition of a plasma to form fluorine-containing etching species in the plasma etch chamber.
    Type: Application
    Filed: January 23, 2018
    Publication date: June 7, 2018
    Inventors: Helen H. Zhu, Linda Marquez, Faisal Yaqoob, Pilyeon Park, Ivan L. Berry, III, Ivelin A. Angelov, Joon Hong Park
  • Patent number: 9911620
    Abstract: Methods of selectively etching silicon nitride on a semiconductor substrate by providing silicon to the plasma to achieve high etch selectivity of silicon nitride to silicon-containing materials are provided. Methods involve providing silicon from a solid or fluidic silicon source or both. A solid silicon source may be upstream of a substrate, such as at or near a showerhead of a process chamber, or in a remote plasma generator. A silicon gas source may be flowed to the plasma during etch.
    Type: Grant
    Filed: April 1, 2015
    Date of Patent: March 6, 2018
    Assignee: Lam Research Corporation
    Inventors: Helen H. Zhu, Linda Marquez, Faisal Yaqoob, Pilyeon Park, Ivan L. Berry, III, Ivelin A. Angelov, Joon Hong Park
  • Patent number: 9837286
    Abstract: A method for selectively etching a tungsten layer on a substrate includes arranging a substrate including a tungsten layer on a substrate support. The substrate processing chamber includes an upper chamber region, an inductive coil arranged outside of the upper chamber region, a lower chamber region including the substrate support and a gas dispersion device arranged between the upper and lower chamber regions. The gas dispersion device includes a plurality of holes in fluid communication with the upper and lower chamber regions. The method further includes controlling pressure in the substrate processing chamber in a range from 0.4 Torr to 10 Torr; supplying an etch gas mixture including fluorine-based gas to the upper chamber region; striking inductively coupled plasma in the upper chamber region by supplying power to the inductive coil; and selectively etching the tungsten layer relative to at least one other film material of the substrate.
    Type: Grant
    Filed: February 3, 2016
    Date of Patent: December 5, 2017
    Assignee: LAM RESEARCH CORPORATION
    Inventors: Dengliang Yang, Helen H. Zhu, George Matamis, Brad Jacobs, Joon Hong Park, Joydeep Guha
  • Publication number: 20170278679
    Abstract: A substrate processing system includes a gas distribution device arranged to distribute process gases over a surface of a substrate arranged in a substrate processing chamber having an upper chamber region and a lower chamber region. A substrate support is arranged in the lower chamber region of the substrate processing chamber below the gas distribution device. A ring is arranged in the lower chamber region of the substrate processing chamber below the gas distribution device and above the substrate support. The ring is arranged to surround a faceplate of the gas distribution device and a region between the gas distribution device and the substrate support, and a gap is defined between the substrate support and the ring.
    Type: Application
    Filed: March 21, 2017
    Publication date: September 28, 2017
    Inventors: Ivelin Angelov, Christian Siladie, Arun Keshavamurthy, Joon Hong Park, Jason Treadwell
  • Patent number: 9752768
    Abstract: An LED lighting device includes a case unit forming a light emitting space, wherein resting surfaces are formed at predetermined areas on the inner side of the case unit, substrates having LEDs mounted thereon and respectively rested on the plurality of resting surfaces, and heat-dissipating units formed in the outer side of the case unit for heat dissipation. Lifespan and user convenience can be improved.
    Type: Grant
    Filed: November 24, 2014
    Date of Patent: September 5, 2017
    Assignee: KMW INC.
    Inventors: Dong-Sik Roh, Duk-Yong Kim, Jong-Ju Han, Tai-Sun Kim, Joon-Hong Park, Chan-Kyu Yoo
  • Publication number: 20170236731
    Abstract: A method for selectively etching one exposed material of a substrate relative to another exposed material of the substrate includes a) arranging the substrate in a processing chamber; b) setting a chamber pressure; c) setting an RF frequency and an RF power for RF plasma; d) supplying a plasma gas mixture to the processing chamber; e) striking the RF plasma in the processing chamber in one of an electric mode (E-mode) and a magnetic mode (H-mode); and f) during plasma processing of the substrate, changing at least one of the chamber pressure, the RF frequency, the RF power and the plasma gas mixture to switch from the one of the E-mode and the H-mode to the other of the E-mode and the H-mode.
    Type: Application
    Filed: February 7, 2017
    Publication date: August 17, 2017
    Inventors: James Eugene Caron, Ivelin Angelov, Joon Hong Park, Dengliang Yang
  • Publication number: 20170236694
    Abstract: A system is provided and includes a substrate processing chamber, one or more injectors, and a controller. The one or more injectors inject an electronegative gas, a baseline electropositive gas, and an additional electropositive gas into the substrate processing chamber. The electronegative gas includes an etch precursor. The additional electropositive gas mixes with and increases electron density of a plasma in the substrate processing chamber. The controller is configured to set an amount, flow rate or pressure of the additional electropositive gas based on at least one of a pressure of the electronegative gas or an electron affinity level of the additional electropositive gas.
    Type: Application
    Filed: February 8, 2017
    Publication date: August 17, 2017
    Inventors: Kwame Eason, James Eugene Caron, Ivelin Angelov, Joon Hong Park, Dengliang Yang
  • Publication number: 20170236688
    Abstract: A chamber member of a plasma source is provided and includes a sidewall, a transition member, a top wall and an injector connecting member. The sidewall is cylindrically-shaped and surrounds an upper region of a substrate processing chamber. The transition member is connected to the sidewall. The top wall is connected to the transition member. The injector connecting member is connected to the top wall, positioned vertically higher than the sidewall, and configured to connect to a gas injector. Gas passes through the injector connecting member via the gas injector and into the upper region of the substrate processing chamber. A center height to low inner diameter ratio of the chamber member is 0.25-0.5 and/or a center height to outer height ratio of the chamber member is 0.4-0.85.
    Type: Application
    Filed: February 9, 2017
    Publication date: August 17, 2017
    Inventors: James Eugene Caron, Ivelin Angelov, Jason Lee Treadwell, Joon Hong Park, Canfeng Lai
  • Patent number: 9640409
    Abstract: A method for processing a semiconductor substrate includes a) providing a substrate stack including a first layer, a plurality of cores arranged in a spaced relationship on the first layer and one or more underlying layers arranged below the first layer; b) depositing a conformal layer on the first layer and the plurality of cores; c) partially etching the conformal layer to create spacers arranged adjacent to sidewalls of the plurality of cores, wherein the partial etching of the conformal layer causes upper portions of the spacers to have an asymmetric profile; d) selectively etching the plurality of cores relative to the spacers and the first layer; e) depositing polymer film on sidewalls of the spacers; and f) etching the upper portions of the spacers to remove the asymmetric profile and to planarize the upper portions of the spacers.
    Type: Grant
    Filed: February 2, 2016
    Date of Patent: May 2, 2017
    Assignee: LAM RESEARCH CORPORATION
    Inventors: Dengliang Yang, Joon Hong Park