Patents by Inventor Joon-Hyun Kwon
Joon-Hyun Kwon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12372593Abstract: A spin Hall magnetic sensor includes a plurality of magnetic thin film units including a magnetic layer stacked on a non-magnetic layer, and a plurality of non-magnetic substances disposed between the plurality of magnetic thin film units, The magnetic includes a Wheatstone bridge structure to observe a magnetic Hall resistance generated by a spin orbit torque (SOT).Type: GrantFiled: August 9, 2023Date of Patent: July 29, 2025Assignees: HYUNDAI MOTOR COMPANY, KIA CORPORATION, KOREA INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Joon-Hyun Kwon, Hyun-Soo Kim, Sang-Hyeok Yang, Su-Jung Noh, Han-Saem Lee, Ji-Sung Lee, Byoung-Chul Min, Jong-Bum Choi, Dong-Soo Han
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Patent number: 12349606Abstract: A three-terminal synaptic device includes a substrate; a source electrode and a drain electrode which are provided on the substrate and spaced apart from each other. The three-terminal synaptic device further includes: a channel layer provided on the substrate, the source electrode, and the drain electrode; an ion reservoir layer which stores active ions; a gate electrode provided on the ion reservoir layer; and an ion barrier layer disposed between the ion reservoir layer. In particular, the channel layer controls movement of active ions between the ion reservoir layer and the channel layer. The three-terminal synaptic device inhibits rapid movement of ions.Type: GrantFiled: May 27, 2022Date of Patent: July 1, 2025Assignees: HYUNDAI MOTOR COMPANY, KIA CORPORATION, POSTECH Research and Business Development FoundationInventors: Su-Jung Noh, Ji-Sung Lee, Han-Saem Lee, Joon-Hyun Kwon, Kyu-Min Lee, Hyun-Sang Hwang, Woo-Seok Choi
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Publication number: 20250130297Abstract: A magnetic sensor using a spin-orbit torque (SOT) and a sensing method using the same, include an SOT channel layer made of a heavy metal material, a ferromagnetic layer stacked on the SOT channel layer, and a protective layer stacked on the ferromagnetic layer, wherein an SOT is generated due to a current applied to the SOT channel layer to vary magnetization of the ferromagnetic layer, and the magnetic sensor which utilizes an SOT with a fast response speed and high sensitivity using a simplified metal thin film structure in which the SOT is generated is provided.Type: ApplicationFiled: December 20, 2024Publication date: April 24, 2025Applicants: Hyundai Motor Company, Kia CorporationInventors: Joon-Hyun KWON, Ji-Sung LEE, Han-Saem LEE, Su-Jung NOH
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Publication number: 20240393413Abstract: A spin Hall magnetic sensor includes a plurality of magnetic thin film units including a magnetic layer stacked on a non-magnetic layer, and a plurality of non-magnetic substances disposed between the plurality of magnetic thin film units, The magnetic includes a Wheatstone bridge structure to observe a magnetic Hall resistance generated by a spin orbit torque (SOT).Type: ApplicationFiled: August 9, 2023Publication date: November 28, 2024Inventors: Joon-Hyun Kwon, Hyun-Soo Kim, Sang-Hyeok Yang, Su-Jung Noh, Han-Saem Lee, Ji-Sung Lee, Byoung-Chul Min, Jong-Bum Choi, Dong-Soo Han
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Patent number: 11995497Abstract: The present disclosure provides a method of detecting a magnetization signal of a physically unclonable functions (PUF) device including acquiring, by a magnetization signal detection sensor, an image of a magnetic layer of the PUF device including the magnetic layer having a perpendicular magnetization component and identifying a magnetization state of the magnetic layer from the image of the magnetic layer acquired by the magnetization signal detection sensor, and according to the present disclosure, it is possible to more efficiently check the magnetization signal of the PUF device and acquire a random unique ID according to magnetization.Type: GrantFiled: April 12, 2023Date of Patent: May 28, 2024Assignees: HYUNDAI MOTOR COMPANY, KIA CORPORATIONInventors: Joon-Hyun Kwon, Ji-Sung Lee, Han-Saem Lee, Su-Jung Noh
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Publication number: 20240032442Abstract: An embodiment spin-orbit torque device array includes a plurality of single devices, each device including a non-magnetic layer, a magnetic layer bonded to the non-magnetic layer, and an upper layer bonded to the magnetic layer, wherein the upper layer includes oxide, and wherein a magnetization state of each of the single devices has only two states, the two states being an up state and a down state.Type: ApplicationFiled: January 12, 2023Publication date: January 25, 2024Inventors: Ji-Sung Lee, Joon-Hyun Kwon, Su-Jung Noh, Han-Saem Lee, Dae-Kyu Koh, Byong-Guk Park, Jaimin Kang, Soogil Lee
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Publication number: 20240032443Abstract: An embodiment magnetic memory device based on perpendicular exchange bias includes a non-magnetic layer, a ferromagnetic layer bonded on the non-magnetic layer, wherein a magnetization direction of the ferromagnetic layer is randomly distributed, and an anti-ferromagnetic layer bonded on the ferromagnetic layer. An embodiment method of manufacturing a magnetic memory device includes preparing the magnetic memory device based on perpendicular exchange bias, the preparing including bonding a ferromagnetic layer on a non-magnetic layer and bonding an anti-ferromagnetic layer on the ferromagnetic layer, and demagnetizing the ferromagnetic layer of the magnetic memory device, wherein a magnetization direction of the ferromagnetic layer is randomly distributed.Type: ApplicationFiled: January 16, 2023Publication date: January 25, 2024Inventors: Ji-Sung Lee, Joon-Hyun Kwon, Su-Jung Noh, Han-Saem Lee, Dae-Kyu Koh, Byong-Guk Park, Jaimin Kang, Soogil Lee
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Publication number: 20230320233Abstract: A spin-orbit-torque (SOT)-based magnetic sensor is provided. The magnetic sensor includes a substrate, an electrode layer formed on the substrate, and a pair of first and second sensing elements stacked on the substrate so as to be connected to the electrode layer, wherein directions of respective currents flowing through the first and second sensing elements via the electrode layer are opposite to each other.Type: ApplicationFiled: June 16, 2022Publication date: October 5, 2023Applicants: HYUNDAI MOTOR COMPANY, KIA CORPORATION, IUCF-HYU (Industry-University Cooperation Foundation Hanyang University)Inventors: Ji-Sung Lee, Su-Jung Noh, Han-Saem Lee, Joon-Hyun Kwon, Jeong-Woo Seo, Jeong-Hun Shin, Jin-Pyo Hong
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Publication number: 20230204692Abstract: A magnetic sensor using a spin-orbit torque (SOT) and a sensing method using the same, include an SOT channel layer made of a heavy metal material, a ferromagnetic layer stacked on the SOT channel layer, and a protective layer stacked on the ferromagnetic layer, wherein an SOT is generated due to a current applied to the SOT channel layer to vary magnetization of the ferromagnetic layer, and the magnetic sensor which utilizes an SOT with a fast response speed and high sensitivity using a simplified metal thin film structure in which the SOT is generated is provided.Type: ApplicationFiled: March 31, 2022Publication date: June 29, 2023Applicants: Hyundai Motor Company, Kia CorporationInventors: Joon-Hyun KWON, Ji-Sung LEE, Han-Saem LEE, Su-Jung NOH
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Publication number: 20230186068Abstract: A weight confirmation method for analog synaptic devices of an artificial neural network includes: learning artificial neural network hardware based on artificial analog memory devices using an artificial neural network learning algorithm; after the learning of the artificial neural network hardware, reading a total weight of a pair of synaptic devices; comparing the total weight of the pair of synaptic devices with 0; applying weights to a positive synaptic device and a negative synaptic device of the pair of synaptic devices, respectively; and confirming the total weight of the pair of synaptic devices in accordance with the weight of the positive synaptic device and the weight of the negative synaptic device. A retention problem of analog synaptic devices is overcome and thus the artificial neural network may stably operate.Type: ApplicationFiled: April 12, 2022Publication date: June 15, 2023Applicants: HYUNDAI MOTOR COMPANY, KIA CORPORATION, POSTECH ACADEMY-INDUSTRY FOUNDATIONInventors: Ji-Sung Lee, Su-Jung Noh, Han-Saem Lee, Joon-Hyun Kwon, Hyun-Sang Hwang, Woo-Seok Choi
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Publication number: 20230172080Abstract: A three-terminal synaptic device includes a substrate; a source electrode and a drain electrode which are provided on the substrate and spaced apart from each other. The three-terminal synaptic device further includes: a channel layer provided on the substrate, the source electrode, and the drain electrode; an ion reservoir layer which stores active ions; a gate electrode provided on the ion reservoir layer; and an ion barrier layer disposed between the ion reservoir layer. In particular, the channel layer controls movement of active ions between the ion reservoir layer and the channel layer. The three-terminal synaptic device inhibits rapid movement of ions.Type: ApplicationFiled: May 27, 2022Publication date: June 1, 2023Applicants: HYUNDAI MOTOR COMPANY, KIA CORPORATION, POSTECH Research and Business Development FoundationInventors: Su-Jung Noh, Ji-Sung Lee, Han-Saem Lee, Joon-Hyun Kwon, Kyu-Min Lee, Hyun-Sang Hwang, Woo-Seok Choi
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Publication number: 20230096447Abstract: Disclosed herein is a spin-orbit torque device including a lower ferromagnetic layer, a non-magnetic layer bonded to the lower ferromagnetic layer, and an upper ferromagnetic layer bonded to the non-magnetic layer, wherein a magnetization orientation of the lower ferromagnetic layer is randomly distributed. According to the present disclosure, it is possible to provide a magnetic memory device which cannot be physically duplicated and has reconfigurability using a spin-orbit torque.Type: ApplicationFiled: February 22, 2022Publication date: March 30, 2023Inventors: Ji-Sung Lee, Joon-Hyun Kwon, Su-Jung Noh, Han-Saem Lee, Byong-Guk Park, Jaimin Kang, Jeong-Mok Kim, Soogil Lee
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Publication number: 20230048278Abstract: A neuromorphic hardware apparatus based on a resistive memory array includes a resistive memory array in which a plurality of synaptic resistor elements are arranged. Each synaptic resistor element is changed in its resistance value depending on a voltage pulse applied thereto and stores the resistance value for a predetermined time. The apparatus also includes a neuron circuit configured to receive an output signal from the resistive memory array and to output a voltage signal to another resistive memory array. The neuron circuit includes a temperature compensation unit, which compensates for an output voltage of the resistive memory array on the basis of an operating temperature of the resistive memory array. Even when a resistive memory array outputs an abnormal output depending on an operating temperature, by compensating a neuron circuit for an input value, it is possible to prevent an operation error from occurring.Type: ApplicationFiled: January 7, 2022Publication date: February 16, 2023Applicants: HYUNDAI MOTOR COMPANY, KIA CORPORATION, POSTECH RESEARCH AND BUSINESS DEVELOPMENT FOUNDATIONInventors: Su-Jung Noh, Ji-Sung Lee, Han-Saem Lee, Joon-Hyun Kwon, Hyun-Sang Hwang, Woo-Seok Choi