Abstract: An inventive array of M.times.N thin film actuated mirrors includes an active matrix, a passivation layer, an etchant stopping layer, and an array of M.times.N actuating structures. Each of the active matrix includes a substrate, an array of M.times.N MOS transistors, M number of source lines, N number of gate lines, an array of M.times.N connecting terminals and an array of M.times.N levelling members, top of the levelling member being at a same level as that of the connecting terminal. Each of the actuating structures includes a first thin film electrode, an thin film electrodisplacive layer, an elastic layer and a conduit, and has a proximal end and a distal end, the proximal end being divided into a first and a second side portions, wherein the first side portion of the proximal end is located on top of the connecting terminal in the active matrix and the second side portion of the proximal end is located on top of the levelling member in the active matrix.