Abstract: A system for creating programs with gestures with a touch computer having a touch display, a plurality of actions preloaded on the touch computer for execution by the touch computer when triggered, a trigger received by the touch computer, software executing on the touch computer for associating the trigger with a corresponding one of the plurality of actions, text received by the software, text combinable with the triggers by the software into a program, a plurality of elements and operations components available to the touch computer for inclusion in the program, software executing on the touch computer for displaying a menu with a section for associating a gesture received by the touch display with a property of at least one element, wherein the gesture is a horizontal movement of the section relative to the touch display, a central computer in communication with the touch computer, and the central computer connected to the Internet to make the program available to authorized users.

Abstract: A system for creating programs with gestures with a touch computer having a touch display, a plurality of actions preloaded on the touch computer for execution by the touch computer when triggered, a trigger received by the touch computer, software executing on the touch computer for associating the trigger with a corresponding one of the plurality of actions, text received by the software, text combinable with the triggers by the software into a program, a plurality of elements and operations components available to the touch computer for inclusion in the program, software executing on the touch computer for displaying a menu with a section for associating a gesture received by the touch display with a property of at least one element, wherein the gesture is a horizontal movement of the section relative to the touch display, a central computer in communication with the touch computer, and the central computer connected to the Internet to make the program available to authorized users.

Abstract: Provided herein are methods and apparatus of hydrogen-based photoresist strip operations that reduce dislocations in a silicon wafer or other substrate. According to various embodiments, the hydrogen-based photoresist strip methods can employ one or more of the following techniques: 1) minimization of hydrogen budget by using short processes with minimal overstrip duration, 2) providing dilute hydrogen, e.g., 2%-16% hydrogen concentration, 3) minimization of material loss by controlling process conditions and chemistry, 4) using a low temperature resist strip, 5) controlling implant conditions and concentrations, and 6) performing one or more post-strip venting processes. Apparatus suitable to perform the photoresist strip methods are also provided.

Abstract: Method and apparatus for cleaning a substrate having a plurality of high-aspect ratio openings are disclosed. A substrate can be provided in a plasma processing chamber, where the substrate includes the plurality of high-aspect ratio openings, the plurality of high-aspect ratio openings are defined by vertical structures having alternating layers of oxide and nitride or alternating layers of oxide and polysilicon. The substrate can include a silicon oxide layer over a damaged or amorphous silicon layer in the high-aspect ratio openings. To remove the silicon oxide layer, a bias power can be applied in the plasma processing chamber at a low pressure, and a fluorine-based species can be used to etch the silicon oxide layer. To remove the underlying damaged or amorphous silicon layer, a source power and a bias power can be applied in the plasma processing chamber, and a hydrogen-based species can be used to etch the damaged or amorphous silicon layer.

Abstract: Method and apparatus for cleaning a substrate having a plurality of high-aspect ratio openings are disclosed. A substrate can be provided in a plasma processing chamber, where the substrate includes the plurality of high-aspect ratio openings, the plurality of high-aspect ratio openings are defined by vertical structures having alternating layers of oxide and nitride or alternating layers of oxide and polysilicon. The substrate can include a silicon oxide layer over a damaged or amorphous silicon layer in the high-aspect ratio openings. To remove the silicon oxide layer, a bias power can be applied in the plasma processing chamber at a low pressure, and a fluorine-based species can be used to etch the silicon oxide layer. To remove the underlying damaged or amorphous silicon layer, a source power and a bias power can be applied in the plasma processing chamber, and a hydrogen-based species can be used to etch the damaged or amorphous silicon layer.

Abstract: Provided are methods and systems for removing a native silicon oxide layer on a wafer. In a non-sequential approach, a wafer is provided with a native silicon oxide layer on a polysilicon layer. An etchant including a hydrogen-based species and a fluorine-based species is introduced, exposed to a plasma, and flowed onto the wafer at a relatively low temperature. The wafer is then heated to a slightly elevated temperature to substantially remove the native oxide layer. In a sequential approach, a wafer is provided with a native silicon oxide layer. A first etchant including a hydrogen-based species and a fluorine-based species is flowed onto the wafer. Then the wafer is heated to a slightly elevated temperature, a second etchant is flowed towards the wafer, and the second etchant is exposed to a plasma to complete the removal of the native silicon oxide layer and to initiate removal of another layer such as a polysilicon layer.

Abstract: Provided are methods and systems for removing polysilicon on a wafer. A wafer can include a polysilicon layer and an exposed nitride and/or oxide structure. An etchant with a hydrogen-based species, such as hydrogen gas, and a fluorine-based species, such as nitrogen trifluoride, can be introduced. The hydrogen-based species and the fluorine-based species can be activated with a remote plasma source. The layer of polysilicon on the wafer can be removed at a selectivity over the exposed nitride and/or oxide structure that is greater than about 500:1.

Abstract: Provided are methods and systems for removing polysilicon on a wafer. A wafer can include a polysilicon layer and an exposed nitride and/or oxide structure. An etchant with a hydrogen-based species, such as hydrogen gas, and a fluorine-based species, such as nitrogen trifluoride, can be introduced. The hydrogen-based species and the fluorine-based species can be activated with a remote plasma source. The layer of polysilicon on the wafer can be removed at a selectivity over the exposed nitride and/or oxide structure that is greater than about 500:1.

Abstract: A device for drilling pocket holes may include a guide carrier having a front surface urging a workpiece; at least one slant bore disposed at the guide carrier for receiving a drill bit; an anti-skid structure disposed at the front surface to secure the workpiece; a drill bit carrier reciprocally and slidably mounted on the guide carrier from a pre-drilling position to a post-drilled position toward and away from the guide carrier and a drill bit rotatably coupled and retained therein; a clamp disposed at the base and an amplifier to actuate the clamp for clamping or unclamping the workpiece by a user's power, wherein the amplifier is disposed away from the base; a quick positioning of the clamp by a braking lever; a lateral stop disposed at the clamp to set a lateral position of the pocket hole from a side face of workpiece; an adjustable end stop disposed at the guide structure or the guide carrier to adjust a pocket hole distance from an end face of workpiece; a lateral through opening disposed at the guid

Abstract: A sprinkler support for the in-ground sprinkler heads includes a base at the lower position, a sidewall extending vertically ascending from the base, a clamping structure disposed at the sidewall of the sprinkler support to secure the sprinkler head, a cushioning structure capable to absorb physical stresses, and anchoring structures holding the sprinkler support with respect to the soil. The sprinkler support accommodates a variety of different size of sprinkler heads by having an adapter, by cantilever fingers extended from the sidewall upwardly or by constructing with two halves, wherein each half comprises the base and sidewall.

Abstract: Provided are methods and systems for removing a native silicon oxide layer on a wafer. In a non-sequential approach, a wafer is provided with a native silicon oxide layer on a polysilicon layer. An etchant including a hydrogen-based species and a fluorine-based species is introduced, exposed to a plasma, and flowed onto the wafer at a relatively low temperature. The wafer is then heated to a slightly elevated temperature to substantially remove the native oxide layer. In a sequential approach, a wafer is provided with a native silicon oxide layer. A first etchant including a hydrogen-based species and a fluorine-based species is flowed onto the wafer. Then the wafer is heated to a slightly elevated temperature, a second etchant is flowed towards the wafer, and the second etchant is exposed to a plasma to complete the removal of the native silicon oxide layer and to initiate removal of another layer such as a polysilicon layer.

Abstract: Provided are methods and systems for removing polysilicon on a wafer. A wafer can include a polysilicon layer and an exposed nitride and/or oxide structure. An etchant with a hydrogen-based species, such as hydrogen gas, and a fluorine-based species, such as nitrogen trifluoride, can be introduced. The hydrogen-based species and the fluorine-based species can be activated with a remote plasma source. The layer of polysilicon on the wafer can be removed at a selectivity over the exposed nitride and/or oxide structure that is greater than about 500:1.