Abstract: Improved resistive random access memory (RRAM) devices are provided that use a 2-D electrode as the SET electrode to take up a variable amount of oxygen from an oxide material, thereby providing a non-volatile resistive memory cell.

Abstract: Improved resistive random access memory (RRAM) devices are provided that use a 2-D electrode as the SET electrode to take up a variable amount of oxygen from an oxide material, thereby providing a non-volatile resistive memory cell.

Abstract: A negative electrode, a lithium battery employing the negative electrode, and a method of preparing the negative electrode. The negative electrode includes a current collector, and a negative electrode active material layer disposed on the current collector. The negative electrode active material layer includes: composite negative electrode active material particles comprising tin (Sn), and conductive metal particles. The conductive metal particles form an intermetallic compound with the Sn, and an average particle size of the conductive metal particles is at least 10 ?m.

Abstract: An negative active material for a rechargeable lithium battery includes a nano-composite including a Si phase, a SiO2 phase, and a metal oxide phase of formulation MyO, where M is a metal with an oxidation number x, a free energy of oxygen-bond formation ranging from ?900 kJ/mol to ?2000 kJ/mol, x, and x·y=2. The negative active material for a rechargeable lithium battery according to the present invention can improve initial capacity, initial efficiency, and cycle-life characteristics by suppressing its initial irreversible reaction.

Abstract: An anode active material including a tin (Sn)-cobalt (Co) intermetallic compound, titanium (Ti), and carbon (C). The anode active material can include indium (In), niobium (Nb), germanium (Ge), molybdenum (Mo), aluminum (Al), phosphorus (P), gallium (Ga), bismuth (Bi), and/or silicon (Si). The anode active material can be included in an anode, and the anode can be included in lithium battery.

Abstract: A negative electrode, a lithium battery employing the negative electrode, and a method of preparing the negative electrode. The negative electrode includes a current collector, and a negative electrode active material layer disposed on the current collector. The negative electrode active material layer includes: composite negative electrode active material particles comprising tin (Sn), and conductive metal particles. The conductive metal particles form an intermetallic compound with the Sn, and an average particle size of the conductive metal particles is at least 10 ?m.

Abstract: A composite anode active material including an intermetallic compound; carbon; and inorganic particles, an anode including the composite anode active material, a lithium battery employing the anode, and a method of preparing the anode active material.

Abstract: A CMOS image sensor and a method for manufacturing the same improves photosensitivity and prevent loss of light by forming a photo-sensing unit under a color filter. The CMOS image sensor may include a plurality of transistors formed on a semiconductor substrate, a metal line formed over the plurality of transistors for electrically connecting the plurality of transistors, and a plurality of photodiodes electrically connected with the plurality of transistors and formed over the metal line.

Abstract: Provided are a method for preparing a zinc antimonide-carbon composite through a mechanical synthesis process of zinc (Zn), antimony (Sb) and carbon (C), and an anode material including the composite as an active material. The method for preparing a zinc antimonide-carbon composite allows simple and rapid preparation of the composite using mechanical properties of a binary alloy of zinc antimonide. In addition, when applying the anode material including the composite as an anode active material to a secondary battery, it is possible to provide excellent initial efficiency, to prevent the problem of a change in volume caused by formation of crude particles, and to realize excellent high-rate characteristics and charge/discharge characteristics.

Abstract: An anode active material including a tin (Sn)-cobalt (Co) intermetallic compound, titanium (Ti), and carbon (C). The anode active material can include indium (In), niobium (Nb), germanium (Ge), molybdenum (Mo), aluminum (Al), phosphorus (P), gallium (Ga), bismuth (Bi), and/or silicon (Si). The anode active material can be included in an anode, and the anode can be included in lithium battery.

Abstract: A negative active material for a rechargeable lithium battery with a composite phase particle has a chemical formula, SiOx, where 0<x<1. The material comprises a first crystalline phase of Si nano-grains, and a second phase of non-crystalline SiO2, where the composite phase particle has a Si-phase peak of 150 to 480 cm?1 according to Raman spectroscopic analysis.

Abstract: A CMOS image sensor and a method for manufacturing the same improves photosensitivity and prevent loss of light by forming a photo-sensing unit under a color filter. The CMOS image sensor may include a plurality of transistors formed on a semiconductor substrate, a metal line formed over the plurality of transistors for electrically connecting the plurality of transistors, and a plurality of photodiodes electrically connected with the plurality of transistors and formed over the metal line.

Abstract: An negative active material for a rechargeable lithium battery includes a nano-composite including a Si phase, a SiO2 phase, and a metal oxide phase of formulation MyO, where M is a metal with an oxidation number x, a free energy of oxygen-bond formation ranging from ?900 kJ/mol to ?2000 kJ/mol, x, and x·y=2. The negative active material for a rechargeable lithium battery according to the present invention can improve initial capacity, initial efficiency, and cycle-life characteristics by suppressing its initial irreversible reaction.

Abstract: A CMOS image sensor and a method for manufacturing the same improves photosensitivity and prevent loss of light by forming a photo-sensing unit under a color filter. The CMOS image sensor may include a plurality of transistors formed on a semiconductor substrate, a metal line formed over the plurality of transistors for electrically connecting the plurality of transistors, and a plurality of photodiodes electrically connected with the plurality of transistors and formed over the metal line.

Abstract: Disclosed is black phosphorus or black phosphorus-carbon composite, which is very suitable for an anode material of lithium rechargeable battery. The black phosphorus or black phosphorus-carbon composite is prepared by using high energy ball-milling, which is easy and efficient way in transforming amorphous red phosphorus into orthorhombic black phosphorus at ambient temperature and pressure.

Abstract: Provided is a planar focusing grating coupler, comprising: a light waveguide including a cladding layer and a core layer formed on a substrate and maintaining incident laser light in a single mode; and a focusing grating coupler formed to have a predetermined grating pitch at a certain area over the core layer, wherein the light using to the light waveguide forms a focal point with the grating layer in the direction perpendicular to the focusing grating coupler, whereby an ultra small pickup head for a mobile optical disk can be used.

Abstract: The present invention provides an organic/inorganic composite porous separator, which comprises: (a) a porous substrate having pores; and (b) an organic/inorganic composite layer formed by coating at least one region selected from the group consisting of a surface of the substrate and a part of pores present in the substrate with a mixture of inorganic porous particles and a binder polymer, wherein the inorganic porous particles have a plurality of macropores with a diameter of 50nm or greater in the particle itself thereby form a pore structure, a manufacturing method thereof, and an electrochemical device using the same. As an additional pathway for lithium ions is created due to a number of pores existing in the inorganic porous particle itself, degradation in the battery performance can be minimized, and energy density per unit weight can be increased by the weight loss effect.

Abstract: A recording layer of a magneto-optical storage medium having a sublayer in accordance with the present invention comprises a recording layer on which information is recorded and stored; and a sublayer formed above or below the recording layer and made up of an alloy containing a transition metal, wherein a magnetic anisotropy energy of the sublayer is exchange-coupled to the recording layer, thereby enhancing a coercive force of the recording layer. The sublayer may be formed in a single-layered structure having one layer, or in a multi-layered structure having a plurality of layers. The sublayer is preferably made up of an alloy containing a transition metal used for the recording layer. According to the present invention, the coercive force of the recording layer can be increased by an exchange coupling effect between the recording layer and its adjacent sublayer, and thus, the stability of the magnetic domain in the recording layer can be improved.

Abstract: An example method for fabricating a semiconductor device includes forming a well, a source region, and a drain region in a substrate, forming a gate oxide film on the substrate and coating a polysilicon film on the gate oxide film. Further, the example method includes forming a trench isolation in the substrate by a dry etching process, forming a oxide film on the inside surface of the trench isolation, providing a dielectric material to fill in the trench isolation, planarizing the dielectric material to expose the top surface of the polysilicon film, and forming a gate by dry etching the polysilicon film.

Abstract: An example method for fabricating a semiconductor device includes forming a well, a source region, and a drain region in a substrate, forming a gate oxide film on the substrate and coating a polysilicon film on the gate oxide film. Further, the example method includes forming a trench isolation in the substrate by a dry etching process, forming a oxide film on the inside surface of the trench isolation, providing a dielectric material to fill in the trench isolation, planarizing the dielectric material to expose the top surface of the polysilicon film, and forming a gate by dry etching the polysilicon film.