Abstract: Provided is a lead frame for a semiconductor device, which includes a base layer made of copper, a strike plating layer or a self assembly monolayer (SAM), thereby preventing oxidation of a base layer while simplifying the manufacturing process, reducing the manufacturing costs and reducing a failure ratio. In one embodiment, in the lead frame for a semiconductor device including a die pad and a plurality of leads positioned adjacent to each other around the die pad, the lead frame includes a base layer made of copper; and a first strike plating layer formed on the one or more portions of the surface of the base layer.

Abstract: Provided is a lead frame for a semiconductor device, which includes a base layer made of copper, a strike plating layer or a self assembly monolayer (SAM), thereby preventing oxidation of a base layer while simplifying the manufacturing process, reducing the manufacturing costs and reducing a failure ratio. In one embodiment, in the lead frame for a semiconductor device including a die pad and a plurality of leads positioned adjacent to each other around the die pad, the lead frame includes a base layer made of copper; and a first strike plating layer formed on the one or more portions of the surface of the base layer.

Abstract: A semiconductor device is provided. The semiconductor device comprises a semiconductor die having bond pads, each of which consists of a first bond pad made of a material whose ionization tendency is relatively low and a second bond pad made of a material whose ionization tendency is relatively high. The second bond pads function as sacrificial anodes to prevent the occurrence of galvanic corrosion at the interfaces between the first bond pads and conductive wires. In an embodiment, the upper surfaces of the second bond pads are marked instead of those of the first bond pads, which reduces the number of defects in the first bond pads. A method for fabricating the semiconductor device is also provided.

Abstract: A wire bonder has a capillary through which a wire passes. A discharge tip is positioned near a bottom section of the capillary and provides a flame to a distal end of the wire. A gas diffuser is positioned beside the capillary to diffuse a heated gas to the distal end of the wire.