Abstract: A memory device including a first structure; and a second structure on the first structure, wherein the first structure includes a first substrate; a peripheral circuit on the first substrate; a first insulating layer covering the first substrate and the peripheral circuit; and a first bonding pad on the first insulating layer, the second structure includes a second substrate; a memory cell array on a first surface of the second substrate; a second insulating layer covering the first surface of the second substrate and the memory cell array; a conductive pattern at least partially recessed from a second surface of the second substrate; and a second bonding pad on the second insulating layer, the first bonding pad is in contact with the second bonding pad, and the conductive pattern is spaced apart from the second insulating layer.

Abstract: A semiconductor device includes a first peripheral circuit region comprising a plurality of lower circuitries, a second peripheral circuit region apart from the first peripheral circuit region in a vertical direction, the second peripheral circuit region comprising a plurality of upper circuitries, and a cell region comprising a plurality of word lines, the cell region between the first peripheral circuit region and the second peripheral circuit region in the vertical direction. The plurality of word lines comprise a first word line connected to a first lower circuitry selected from the plurality of lower circuitries and a second word line connected to a first upper circuitry selected from the plurality of upper circuitries.

Abstract: A semiconductor memory device includes: a semiconductor substrate having a first surface and a second surface opposing each other; a back-side insulating layer below the second surface of the semiconductor substrate; an external input/output conductive pattern below the back-side insulating layer; a circuit device including a gate electrode and a source/drain region, on the first surface of the semiconductor substrate; an internal input/output conductive pattern on the first surface of the semiconductor substrate, the internal input/output conductive pattern having at least a portion disposed on the same level as at least a portion of the gate electrode; a through-electrode structure penetrating through the semiconductor substrate and the back-side insulating layer and electrically connected to the internal input/output conductive pattern and the external input/output conductive pattern; and a memory cell array region disposed on a level higher than the circuit device, on the first surface of the semiconducto

Abstract: A benzofuran-based N-acylhydrazone derivative according to the present invention has an excellent anticancer effect while having low toxicity and excellent solubility, and thus a pharmaceutical composition comprising the derivative can be usefully used to prevent or treat a cell proliferative disorder including various cancers.

Abstract: The present invention relates to a composition for preventing, alleviating or treating inflammatory diseases, comprising, as an active ingredient, an acylhydrazone derivative compound, a stereoisomer thereof or a pharmaceutically acceptable salt thereof. an acylhydrazone derivative compound, a stereoisomer thereof or a pharmaceutically acceptable salt thereof, of the present invention, effectively inhibits inflammatory cytokines and inflammatory signaling pathways, thereby effectively alleviating symptoms of inflammatory diseases such as dermatitis. Therefore, the composition according to the present invention may be effectively used for the prevention, alleviation or treatment of inflammatory diseases.

Abstract: A composition containing colchicine and its uses are disclosed. The composition enhances the expression amount of filaggrin that is highly related to the onset of allergic skin diseases, enhances skin moisturizing effects to thereby improve the skin barrier function, and in addition, controls inflammatory responses by allergic skin diseases. Therefore, methods for prevention and/or treatment of allergic skin diseases and/or pruritus cutaneous and skin moisturization and skin condition improvement are disclosed.

Abstract: The present invention relates to a composition for preventing, alleviating or treating inflammatory diseases, comprising, as an active ingredient, an acylhydrazone derivative compound, a stereoisomer thereof or a pharmaceutically acceptable salt thereof. an acylhydrazone derivative compound, a stereoisomer thereof or a pharmaceutically acceptable salt thereof, of the present invention, effectively inhibits inflammatory cytokines and inflammatory signaling pathways, thereby effectively alleviating symptoms of inflammatory diseases such as dermatitis. Therefore, the composition according to the present invention may be effectively used for the prevention, alleviation or treatment of inflammatory diseases.

Abstract: The present invention relates to ethyl(2-methyl-3{(E)-[(naphtho[2,1-b]furan-2-ylcarbonyl)hydrazono]methyl}-1H-indole-1-yl)acetate, the novel mitosis inhibitor. The said ethyl(2-methyl-3{(E)-[(naphtho[2,1-b]furan-2-ylcarbonyl)hydrazono]methyl}-1H-indole-1-yl)acetate not only induces apoptosis by inhibiting tubulin polymerization in the course of mitosis but also displays an excellent anticancer effect in the multi-drug resistant cancer cells, so that it can be effectively used for the treatment of cell proliferative disease including various cancers.

Abstract: The present invention relates to ethyl(2-methyl-3{(E)-[(naphtho[2,1-b]furan-2-ylcarbonyl)hydrazono]methyl}-1H-indole-1-yl)acetate, the novel mitosis inhibitor. The said ethyl(2-methyl-3{(E)-[(naphtho[2,1-b]furan-2-ylcarbonyl)hydrazono]methyl}-1H-indole-1-yl)acetate not only induces apoptosis by inhibiting tubulin polymerization in the course of mitosis but also displays an excellent anticancer effect in the multi-drug resistant cancer cells, so that it can be effectively used for the treatment of cell proliferative disease including various cancers.