Patents by Inventor Joon Sung Ryu

Joon Sung Ryu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7374701
    Abstract: A composition of (i) an organometallic precursor containing a hydrazine compound coordinating with a central metal thereof and (ii) an organometallic compound of a main group metal and a method of forming metal film or pattern using this composition.
    Type: Grant
    Filed: June 24, 2004
    Date of Patent: May 20, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Euk Che Hwang, Sang Yoon Lee, Young Hun Byun, Joon Sung Ryu, Hae Jung Son
  • Patent number: 7294584
    Abstract: A siloxane-based resin having a novel structure and a semiconductor interlayer insulating film using the same. The siloxane-based resins have a low dielectric constant in addition to excellent mechanical properties and are useful materials in an insulating film between interconnect layers of a semiconductor device.
    Type: Grant
    Filed: May 11, 2006
    Date of Patent: November 13, 2007
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yi Yeol Lyu, Ki Yong Song, Joon Sung Ryu, Jong Baek Seon
  • Patent number: 7108922
    Abstract: A siloxane-based resin having a novel structure and a semiconductor interlayer insulating film using the same. The siloxane-based resins have a low dielectric constant in addition to excellent mechanical properties and are useful materials in an insulating film between interconnecting layers of a semiconductor device.
    Type: Grant
    Filed: February 2, 2004
    Date of Patent: September 19, 2006
    Assignee: Samsung Electronic Co., Ltd.
    Inventors: Yi Yeol Lyu, Jin Heong Yim, Ki Yong Song, Hyun Dam Jeong, Joon Sung Ryu
  • Patent number: 7071540
    Abstract: A siloxane-based resin having a novel structure and a semiconductor interlayer insulating film using the same. The siloxane-based resins have a low dielectric constant in addition to excellent mechanical properties and are useful materials in an insulating film between interconnect layers of a semiconductor device.
    Type: Grant
    Filed: November 28, 2003
    Date of Patent: July 4, 2006
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yi Yeol Lyu, Ki Yong Song, Joon Sung Ryu, Jong Baek Seon
  • Patent number: 7014917
    Abstract: Disclosed herein are a siloxane-based resin having novel structure and an interlayer insulating film for a semiconductor device formed using the same The siloxane-based resins have so low dielectric constant in addition to excellent mechanical properties, heat-stability and crack-resistance that they are useful materials for an insulating film between interconnect layers of a semiconductor device.
    Type: Grant
    Filed: October 30, 2003
    Date of Patent: March 21, 2006
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yi Yeol Lyu, Jin Heong Yim, Joon Sung Ryu, Ki Yong Song
  • Publication number: 20040242013
    Abstract: Disclosed herein are a siloxane-based resin having novel structure and an interlayer insulating film for a semiconductor device formed using the same. The siloxane-based resins have so low dielectric constant in addition to excellent mechanical properties, heat-stability and crack-resistance that they are useful materials for an insulating film between interconnect layers of a semiconductor device.
    Type: Application
    Filed: October 30, 2003
    Publication date: December 2, 2004
    Inventors: Yi Yeol Lyu, Jin Heong Yim, Joon Sung Ryu, Ki Yong Song