Patents by Inventor Joon Woo Jeon
Joon Woo Jeon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11936969Abstract: A camera module includes: a first substrate on which an image sensor configured to convert an optical signal incident through a lens module into an electrical signal is disposed and a first connection terminal is disposed; a second substrate spaced apart from the first substrate and including a second connection terminal formed in a position facing the first connection terminal; and a terminal connector electrically connecting the first connection terminal and the second connection terminal to each other and configured to maintain a preset distance between the first substrate and the second substrate. In the camera module, the terminal connector includes: a connecting member including a first connection portion, a second connection portion, and a deformable portion; and a support member configured to maintain the preset distance between the first substrate and the second substrate.Type: GrantFiled: May 24, 2022Date of Patent: March 19, 2024Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventors: Se Yeon Hwang, Hyun Sang Kwak, Yeo Ok Jeon, Joon Woo Gi, Seok Hwan Kim
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Patent number: 10978614Abstract: A light-emitting device includes an emission structure, a current block layer on the emission structure, a reflective layer on the current block layer, a protection layer that covers the reflective layer, and an electrode layer on the protection layer.Type: GrantFiled: May 8, 2018Date of Patent: April 13, 2021Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jong-in Yang, Dong-hyuk Joo, Jin-ha Kim, Joon-woo Jeon, Jung-hee Kwak
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Patent number: 10930817Abstract: A light-emitting device includes an emission structure, a current block layer on the emission structure, a reflective layer on the current block layer, a protection layer that covers the reflective layer, and an electrode layer on the protection layer.Type: GrantFiled: December 21, 2016Date of Patent: February 23, 2021Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jong-in Yang, Dong-hyuk Joo, Jin-ha Kim, Joon-woo Jeon, Jung-hee Kwak
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Patent number: 10128425Abstract: A semiconductor light emitting device includes a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer; and an insulating layer on the light emitting structure and including first and second through-holes. The insulating layer includes a first lower insulating layer and a second lower insulating layer. The first insulating layer is disposed on the first conductivity-type semiconductor layer and is surrounded by the second lower insulating layer with the first through-hole interposed therebetween.Type: GrantFiled: January 5, 2018Date of Patent: November 13, 2018Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Joon Woo Jeon, Sang Seok Lee, Hyun Kwon Hong
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Publication number: 20180261722Abstract: A light-emitting device includes an emission structure, a current block layer on the emission structure, a reflective layer on the current block layer, a protection layer that covers the reflective layer, and an electrode layer on the protection layer.Type: ApplicationFiled: May 8, 2018Publication date: September 13, 2018Inventors: Jong-in Yang, Dong-hyuk Joo, Jin-ha Kim, Joon-woo Jeon, Jung-hee Kwak
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Publication number: 20180130932Abstract: A semiconductor light emitting device includes a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer; and an insulating layer on the light emitting structure and including first and second through-holes. The insulating layer includes a first lower insulating layer and a second lower insulating layer. The first insulating layer is disposed on the first conductivity-type semiconductor layer and is surrounded by the second lower insulating layer with the first through-hole interposed therebetween.Type: ApplicationFiled: January 5, 2018Publication date: May 10, 2018Inventors: Joon Woo JEON, Sang Seok LEE, Hyun Kwon HONG
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Publication number: 20180040788Abstract: A semiconductor light emitting device includes a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer; and an insulating layer on the light emitting structure and including first and second through-holes. The insulating layer includes a first lower insulating layer and a second lower insulating layer. The first insulating layer is disposed on the first conductivity-type semiconductor layer and is surrounded by the second lower insulating layer with the first through-hole interposed therebetween.Type: ApplicationFiled: February 27, 2017Publication date: February 8, 2018Inventors: Joon Woo JEON, Sang Seok LEE, Hyun Kwon HONG
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Patent number: 9887334Abstract: A semiconductor light emitting device includes a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer; and an insulating layer on the light emitting structure and including first and second through-holes. The insulating layer includes a first lower insulating layer and a second lower insulating layer. The first insulating layer is disposed on the first conductivity-type semiconductor layer and is surrounded by the second lower insulating layer with the first through-hole interposed therebetween.Type: GrantFiled: February 27, 2017Date of Patent: February 6, 2018Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Joon Woo Jeon, Sang Seok Lee, Hyun Kwon Hong
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Publication number: 20170263816Abstract: A light-emitting device includes an emission structure, a current block layer on the emission structure, a reflective layer on the current block layer, a protection layer that covers the reflective layer, and an electrode layer on the protection layer.Type: ApplicationFiled: December 21, 2016Publication date: September 14, 2017Inventors: Jong-in YANG, Dong-hyuk JOO, Jin-ha KIM, Joon-woo JEON, Jung-hee KWAK
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Patent number: 9412903Abstract: A semiconductor light emitting device includes a stacked semiconductor structure including a first conductivity-type semiconductor layer having a top surface divided into a first region and a second region, and an active layer and a second conductivity-type semiconductor layer disposed sequentially on the second region of the first conductivity-type semiconductor layer. First and second contact electrodes are disposed in the first region of the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, respectively. A current spreading layer is disposed on the second contact electrode and comprises a first conductive layer having a first resistivity and a second conductive layer having a second resistivity smaller than the first resistivity alternately stacked.Type: GrantFiled: January 20, 2015Date of Patent: August 9, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Ju Heon Yoon, Joon Woo Jeon, Dong Hyuk Joo, Jin Young Choi
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Publication number: 20150207051Abstract: A semiconductor light emitting device includes a stacked semiconductor structure including a first conductivity-type semiconductor layer having a top surface divided into a first region and a second region, and an active layer and a second conductivity-type semiconductor layer disposed sequentially on the second region of the first conductivity-type semiconductor layer. First and second contact electrodes are disposed in the first region of the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, respectively. A current spreading layer is disposed on the second contact electrode and comprises a first conductive layer having a first resistivity and a second conductive layer having a second resistivity smaller than the first resistivity alternately stacked.Type: ApplicationFiled: January 20, 2015Publication date: July 23, 2015Inventors: Ju Heon YOON, Joon Woo JEON, Dong Hyuk JOO, Jin Young CHOI
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Publication number: 20150091041Abstract: A semiconductor light emitting device includes a substrate, a first structure, a second structure, first and second n-electrodes, and first and second p-electrodes. The first structure is disposed on the substrate and includes a first n-type semiconductor layer, a first active layer, and a first p-type semiconductor layer. The second structure is spaced apart from the first structure on the substrate and includes a second n-type semiconductor layer, a second active layer and a second p-type semiconductor layer. The first n-electrode and the first p-electrode are connected to the first n-type semiconductor layer and the first p-type semiconductor layer, respectively. The second n-electrode and the second p-electrode are connected to the second n-type semiconductor layer and the second p-type semiconductor layer, respectively. The second n-electrode is spaced apart from the second active layer to encompass the second active layer.Type: ApplicationFiled: August 7, 2014Publication date: April 2, 2015Inventors: Ju Heon YOON, Myeong Ha KIM, Chan Mook LIM, Joon Woo JEON, Jin Young CHOI
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Publication number: 20110291140Abstract: Provided is a light emitting device. The light emitting device includes a light emitting structure layer including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, a gallium barrier layer on the light emitting structure layer, and a metal electrode layer on the gallium barrier layer.Type: ApplicationFiled: May 26, 2011Publication date: December 1, 2011Inventors: Kwang Ki Choi, Ji hyung Moon, June O Song, Sang Youl Lee, Tae Yeon Seong, Se Yeon Jung, Joon Woo Jeon, Seong Han Park