Patents by Inventor Joon Yeoh

Joon Yeoh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20050178741
    Abstract: The present invention relates to methods of etching a porous dielectric. The method includes etching the film in a plasma etch chamber with CF4, H2 and a noble gas, wherein the CF4 to H2 gas flow ratio is between 1.33:1 and 2.7:1 and the noble gas is greater than about 42% of the total gas flow to the plasma chamber.
    Type: Application
    Filed: May 3, 2004
    Publication date: August 18, 2005
    Inventor: Joon Yeoh