Abstract: An acellular dermal graft is provided. The acellular dermal graft may be useful in minimizing side effects caused after transplantation since an environment favorable for formation of new blood vessels and proliferation of autologous tissues is provided by forming a multi-penetration structure in an acellular dermal tissue, removing a basement membrane layer and/or subjecting corners to slope cutting, and transplantation is stably performed within a short transplantation time due to improved extensibility and flexibility of tissues. The acellular dermal graft may be useful in reducing a time required to recover tissues after transplantation since the transplantation is stably performed due to improved grafting reaction with a host tissue by enhancing uptake of fibroblasts and promoting angiogenic activities.

Abstract: According to example embodiments, a method for controlling a gate voltage applied to a gate electrode of a high electron mobility transistor (HEMT) may include measuring a voltage between a drain electrode and a source electrode of the HEMT, and adjusting a level of the gate voltage applied to the gate electrode of the HEMT according to the measured voltage. The level of the gate electrode may be adjusted if the voltage between the drain electrode and the source electrode is different than a set value.

Abstract: A high electron mobility transistor (HEMT) according to example embodiments includes a channel layer, a channel supply layer on the channel layer, a source electrode and a drain electrode on at least one of the channel layer and the channel supply layer, a gate electrode between the source electrode and the drain electrode, and a Schottky electrode forming a Schottky contact with the channel supply layer. An upper surface of the channel supply layer may define a Schottky electrode accommodation unit. At least part of the Schottky electrode may be in the Schottky electrode accommodation unit. The Schottky electrode is electrically connected to the source electrode.

Abstract: According to example embodiments, a HEMT includes a channel supply layer on a channel layer, a p-type semiconductor structure on the channel supply layer, a gate electrode on the p-type semiconductor structure, and source and drain electrodes spaced apart from two sides of the gate electrode respectively. The channel supply layer may have a higher energy bandgap than the channel layer. The p-type semiconductor structure may have an energy bandgap that is different than the channel supply layer. The p-type semiconductor structure may include a hole injection layer (HIL) on the channel supply layer and be configured to inject holes into at least one of the channel layer and the channel supply in an on state. The p-type semiconductor structure may include a depletion forming layer on part of the HIL. The depletion forming layer may have a dopant concentration that is different than the dopant concentration of the HIL.

Abstract: An acellular dermal graft is provided. The acellular dermal graft may be useful in minimizing side effects caused after transplantation since an environment favorable for formation of new blood vessels and proliferation of autologous tissues is provided by forming a multi-penetration structure in an acellular dermal tissue, removing a basement membrane layer and/or subjecting corners to slope cutting, and transplantation is stably performed within a short transplantation time due to improved extensibility and flexibility of tissues. The acellular dermal graft may be useful in reducing a time required to recover tissues after transplantation since the transplantation is stably performed due to improved grafting reaction with a host tissue by enhancing uptake of fibroblasts and promoting angiogenic activities.

Abstract: According to example embodiments, a normally-off high electron mobility transistor (HEMT) includes: a channel layer having a first nitride semiconductor, a channel supply layer on the channel layer, a source electrode and a drain electrode at sides of the channel supply layer, a depletion-forming layer on the channel supply layer, a gate insulating layer on the depletion-forming layer, and a gate electrode on the gate insulation layer. The channel supply layer includes a second nitride semiconductor and is configured to induce a two-dimensional electron gas (2DEG) in the channel layer. The depletion-forming layer is configured has at least two thicknesses and is configured to form a depletion region in at least a partial region of the 2DEG. The gate electrode contacts the depletion-forming layer.

Abstract: According to example embodiments, a method for controlling a gate voltage applied to a gate electrode of a high electron mobility transistor (HEMT) may include measuring a voltage between a drain electrode and a source electrode of the HEMT, and adjusting a level of the gate voltage applied to the gate electrode of the HEMT according to the measured voltage. The level of the gate electrode may be adjusted if the voltage between the drain electrode and the source electrode is different than a set value.

Abstract: Disclosed is a method for complex phalloplasty for widening a penis, using a circumcised foreskin as an autologous graft. In the method, a foreskin cut off by circumcision, conventionally discarded as waste, is implanted as an autograft in phalloplasty, whereby the penis can be widened.

Abstract: According to example embodiments, a HEMT includes a channel supply layer on a channel layer, a p-type semiconductor structure on the channel supply layer, a gate electrode on the p-type semiconductor structure, and source and drain electrodes spaced apart from two sides of the gate electrode respectively. The channel supply layer may have a higher energy bandgap than the channel layer. The p-type semiconductor structure may have an energy bandgap that is different than the channel supply layer. The p-type semiconductor structure may include a hole injection layer (HIL) on the channel supply layer and be configured to inject holes into at least one of the channel layer and the channel supply in an on state. The p-type semiconductor structure may include a depletion forming layer on part of the HIL. The depletion forming layer may have a dopant concentration that is different than the dopant concentration of the HIL.

Abstract: According to example embodiments, a normally-off high electron mobility transistor (HEMT) includes: a channel layer having a first nitride semiconductor, a channel supply layer on the channel layer, a source electrode and a drain electrode at sides of the channel supply layer, a depletion-forming layer on the channel supply layer, a gate insulating layer on the depletion-forming layer, and a gate electrode on the gate insulation layer. The channel supply layer includes a second nitride semiconductor and is configured to induce a two-dimensional electron gas (2DEG) in the channel layer. The depletion-forming layer is configured has at least two thicknesses and is configured to form a depletion region in at least a partial region of the 2DEG. The gate electrode contacts the depletion-forming layer.

Abstract: Disclosed is a method for complex phalloplasty for widening a penis, using a circumcised foreskin as an autologous graft. In the method, a foreskin cut off by circumcision, conventionally discarded as waste, is implanted as an autograft in phalloplasty, whereby the penis can be widened.

Abstract: A high electron mobility transistor (HEMT) according to example embodiments includes a channel layer, a channel supply layer on the channel layer, a source electrode and a drain electrode on at least one of the channel layer and the channel supply layer, a gate electrode between the source electrode and the drain electrode, and a Schottky electrode forming a Schottky contact with the channel supply layer. An upper surface of the channel supply layer may define a Schottky electrode accommodation unit. At least part of the Schottky electrode may be in the Schottky electrode accommodation unit. The Schottky electrode is electrically connected to the source electrode.

Abstract: Disclosed herein is a method of phalloplasty for girth enhancement. It comprises incising minimally the outer skin of a penis; separating the skin and the hypoderm from a part immediately above Buck's fascia and peeling off the skin and the hypoderm in a region ranging from a part proximal to a glans to prepubic junction; forming a mesh structure of multiple slits in a penile implant; and fixing the penile implant to the penis by suture. The formation of a mesh structure of multiple slits or the use of an implant in multiple pieces makes it possible to cope with complications, thereby significantly reducing complications. Also, the multiple slits or multiple pieces form spaces therebetween, which lead to an increase in flexibility between the implant tissues, thereby enjoying the advantages of minimizing discomfort upon erection and reducing the occurrence of penis curvature. The delicate irregularities of the penis may serve as a factor promoting sexual stimulation upon sexual intercourse.

Abstract: Disclosed herein is a method of phalloplasty for girth enhancement. It comprises incising minimally the outer skin of a penis; separating the skin and the hypoderm from a part immediately above Buck's fascia and peeling off the skin and the hypoderm in a region ranging from a part proximal to a glans to prepubic junction; forming a mesh structure of multiple slits in a penile implant; and fixing the penile implant to the penis by suture. The formation of a mesh structure of multiple slits or the use of an implant in multiple pieces makes it possible to cope with complications, thereby significantly reducing complications. Also, the multiple slits or multiple pieces form spaces therebetween, which lead to an increase in flexibility between the implant tissues, thereby enjoying the advantages of minimizing discomfort upon erection and reducing the occurrence of penis curvature. The delicate irregularities of the penis may serve as a factor promoting sexual stimulation upon sexual intercourse.