Abstract: An apparatus for automatically inspecting the welding state of a battery module is configured to inspect welding states of welding parts of a plurality of leads for electrical connection based on a deep penetration inspection using application of eddy current to the welding parts of the leads.

Abstract: A method for manufacturing a semiconductor package, for example a package-on-package type semiconductor device package. As non-limiting examples, various aspects of this disclosure provide high-yield methods for manufacturing a package-on-package type semiconductor package, or a portion thereof.

Abstract: A method for manufacturing a semiconductor package, for example a package-on-package type semiconductor device package. As non-limiting examples, various aspects of this disclosure provide high-yield methods for manufacturing a package-on-package type semiconductor package, or a portion thereof.

Abstract: Provided are a method of transferring a tin sulfide film and a photoelectric device using the tin sulfide film. The method includes: forming a first tin sulfide film on a first substrate; placing a second substrate on the first tin sulfide film; and forming a second tin sulfide film bonded to a surface of the second substrate by transferring a portion of the first tin sulfide film to the second substrate through a rapid thermal process (RTP).

Abstract: An exemplary semiconductor device can comprise a die, a redistribution structure (RDS), an interconnect, a conductive strap, an encapsulant, and an EMI shield. The redistribution structure can comprise an RDS top surface coupled to the die bottom side. The interconnect can be coupled to the RDS bottom surface. The conductive strap can be coupled to the RDS, and can comprise a strap inner end coupled to the RDS bottom surface, and a strap outer end located lower than the RDS bottom surface. The encapsulant can encapsulate the conductive strap and the RDS bottom surface. The EMI shield can cover and contact the encapsulant sidewall and the strap outer end. Other examples and related methods are also disclosed herein.

Abstract: A method for manufacturing a semiconductor package, for example a package-on-package type semiconductor device package. As non-limiting examples, various aspects of this disclosure provide high-yield methods for manufacturing a package-on-package type semiconductor package, or a portion thereof.

Abstract: A method for manufacturing a semiconductor package, for example a package-on-package type semiconductor device package. As non-limiting examples, various aspects of this disclosure provide high-yield methods for manufacturing a package-on-package type semiconductor package, or a portion thereof.

Abstract: An exemplary semiconductor device can comprise a die, a redistribution structure (RDS), an interconnect, a conductive strap, an encapsulant, and an EMI shield. The redistribution structure can comprise an RDS top surface coupled to the die bottom side. The interconnect can be coupled to the RDS bottom surface. The conductive strap can be coupled to the RDS, and can comprise a strap inner end coupled to the RDS bottom surface, and a strap outer end located lower than the RDS bottom surface. The encapsulant can encapsulate the conductive strap and the RDS bottom surface. The EMI shield can cover and contact the encapsulant sidewall and the strap outer end. Other examples and related methods are also disclosed herein.

Abstract: Provided are a method of transferring a tin sulfide film and a photoelectric device using the tin sulfide film. The method includes: forming a first tin sulfide film on a first substrate; placing a second substrate on the first tin sulfide film; and forming a second tin sulfide film bonded to a surface of the second substrate by transferring a portion of the first tin sulfide film to the second substrate through a rapid thermal process (RTP).

Abstract: A method for manufacturing a semiconductor package, for example a package-on-package type semiconductor device package. As non-limiting examples, various aspects of this disclosure provide high-yield methods for manufacturing a package-on-package type semiconductor package, or a portion thereof.

Abstract: An exemplary semiconductor device can comprise a die, a redistribution structure (RDS), an interconnect, a conductive strap, an encapsulant, and an EMI shield. The redistribution structure can comprise an RDS top surface coupled to the die bottom side. The interconnect can be coupled to the RDS bottom surface. The conductive strap can be coupled to the RDS, and can comprise a strap inner end coupled to the RDS bottom surface, and a strap outer end located lower than the RDS bottom surface. The encapsulant can encapsulate the conductive strap and the RDS bottom surface. The EMI shield can cover and contact the encapsulant sidewall and the strap outer end. Other examples and related methods are also disclosed herein.

Abstract: An exemplary semiconductor device can comprise a die, a redistribution structure (RDS), an interconnect, a conductive strap, an encapsulant, and an EMI shield. The redistribution structure can comprise an RDS top surface coupled to the die bottom side. The interconnect can be coupled to the RDS bottom surface. The conductive strap can be coupled to the RDS, and can comprise a strap inner end coupled to the RDS bottom surface, and a strap outer end located lower than the RDS bottom surface. The encapsulant can encapsulate the conductive strap and the RDS bottom surface. The EMI shield can cover and contact the encapsulant sidewall and the strap outer end. Other examples and related methods are also disclosed herein.

Abstract: A method for manufacturing a semiconductor package, for example a package-on-package type semiconductor device package. As non-limiting examples, various aspects of this disclosure provide high-yield methods for manufacturing a package-on-package type semiconductor package, or a portion thereof.

Abstract: An exemplary semiconductor device can comprise a die, a redistribution structure (RDS), an interconnect, a conductive strap, an encapsulant, and an EMI shield. The redistribution structure can comprise an RDS top surface coupled to the die bottom side. The interconnect can be coupled to the RDS bottom surface. The conductive strap can be coupled to the RDS, and can comprise a strap inner end coupled to the RDS bottom surface, and a strap outer end located lower than the RDS bottom surface. The encapsulant can encapsulate the conductive strap and the RDS bottom surface. The EMI shield can cover and contact the encapsulant sidewall and the strap outer end. Other examples and related methods are also disclosed herein.

Abstract: A semiconductor package that includes EMI shielding and a fabricating method thereof are disclosed. In one embodiment, the fabricating method of a semiconductor package includes forming a substrate, attaching semiconductor devices to a top portion of the substrate, encapsulating the semiconductor devices using an encapsulant, forming a trench in the encapsulant, and forming a shielding layer on a surface of the encapsulant.

Abstract: A transparent photoelectric element and a method for fabricating the same are provided. The method includes providing a transparent substrate, forming a transparent conductive film on the transparent substrate at room temperature, forming an n-type oxide semiconductor film on the transparent conductive film and forming a p-type nickel oxide film having a quantum dot structure on the n-type oxide semiconductor film through reactive sputtering at room temperature, the reactive sputtering including oxygen and argon, a ratio of oxygen being smaller than a ratio of argon.

Abstract: A method for manufacturing a semiconductor package, for example a package-on-package type semiconductor device package. As non-limiting examples, various aspects of this disclosure provide high-yield methods for manufacturing a package-on-package type semiconductor package, or a portion thereof.

Abstract: A method for manufacturing a semiconductor package, for example a package-on-package type semiconductor device package. As non-limiting examples, various aspects of this disclosure provide high-yield methods for manufacturing a package-on-package type semiconductor package, or a portion thereof.

Abstract: A method for manufacturing a semiconductor package, for example a package-on-package type semiconductor device package. As non-limiting examples, various aspects of this disclosure provide high-yield methods for manufacturing a package-on-package type semiconductor package, or a portion thereof.

Abstract: The present invention is to provide a heating substrate equipped with a conductive thin film and electrodes. The heating substrate includes a transparent substrate, a plurality of electrodes formed on a first face of the substrate, and a conductive thin film formed on the first face of the substrate and including a plurality of regions electrically connected each other in parallel by the plurality of electrodes. Furthermore, a method of manufacturing a heating substrate equipped with a conductive thin film and electrodes according to an exemplary embodiment of the present invention includes forming the conductive thin film on a substrate, forming main electrodes so as to extend on the substrate while being adjacent to edges of the conductive thin film, and forming branched electrodes that are extended from the conductive thin film across one side of the conductive thin film while coming in contact with the conductive thin film.