Abstract: Provided are a semiconductor lead frame, a semiconductor package having the semiconductor lead frame, and a method of plating the semiconductor lead frame. The method includes preparing a substrate formed of a Fe—Ni alloy (alloy 42), and a plating layer that contains grains less than 1 micrometer in size and is plated on the substrate. The growth of whiskers when a Sn plated layer is formed on a substrate formed of a Fe—Ni alloy (alloy 42) can be suppressed by minimizing the grain size of the Sn plated layer.

Abstract: Provided are a semiconductor lead frame, a semiconductor package having the semiconductor lead frame, and a method of plating the semiconductor lead frame. The method includes preparing a substrate formed of a Fe—Ni alloy (alloy 42), and a plating layer that contains grains less than 1 micrometer in size and is plated on the substrate. The growth of whiskers when a Sn plated layer is formed on a substrate formed of a Fe—Ni alloy (alloy 42) can be suppressed by minimizing the grain size of the Sn plated layer.

Abstract: The lead frame includes outer leads plated with tin (Sn) alloy so as to withstand the high temperatures generated during a subsequent semiconductor packaging process. In addition to the outer leads, the lead frame includes a die pad and inner leads composed of a base metal, such as copper (Cu), a copper alloy, or a nickel alloy. The die pad and the inner leads are plated with silver for improved conductivity. In order to withstand relatively high temperatures as well as to resist corrosion and have good solder wettability, the outer leads are preferably plated with a tin antimony alloy, such as a tin-antimony alloy consisting of 90.+-.5 weight percent of tin and 10.+-.5 weight percent antimony. Alternatively, the outer leads can be plated with a tin-antimony-lead alloy, such as a tin-antimony-lead alloy consisting of 10.+-.5 weight percent of tin, 10.+-.5 weight percent of antimony and 80.+-.10 weight percent of lead. A method of plating a lead frame is also provided.

Abstract: A semiconductor lead frame and a fabricating method thereof are provided. The semiconductor lead frame includes a metal substrate, and a multi-layered plating layer including a copper-nickel alloy layer formed on the metal substrate, and a palladium or palladium alloy layer formed on the copper-nickel alloy layer.

Abstract: A method for forming a plating layer of a lead frame having excellent anti-corrosion properties is provided. At least a portion of a lead frame is plated, then a first heating of the plated portion of the lead frame to a first temperature is performed, and finally a second heating of the first heated plated portion of the lead frame to a second temperature higher than the first temperature is performed. The lead frame manufactured by this method has excellent anti-corrosion properties, such that deterioration of the plating layer, by cracking and inferior solderability, is not observed.

Abstract: A method for manufacturing a lead frame includes degreasing and activating the surface of a metal sheet, providing the plating solution containing nickel(II) sulfamate tetrahydrate, (Ni(H.sub.2 NSO.sub.3).sub.2.4H.sub.2 O), manganese(II) sulfamate tetrahydrate (Mn(H.sub.2 NSO.sub.3).sub.2.4H.sub.2), nickel (II) chloride hexahydrate (NiCl.sub.2.6H.sub.2 O) and boric acid, plating the metal sheet in the plating solution to form a Ni--Mn alloy layer, and forming a Pd or Pd alloy layer on the Ni--Mn alloy layer.

Abstract: A lead frame has a metal substrate directly coated with a palladium alloy layer to prevent diffusion of metal molecules from the metal substrate. The lead frame does not contain a nickel intermediate layer, thereby preventing the diffusion of nickel molecules which makes soldering difficult, and enhancing production.

Abstract: A semiconductor lead frame having an improved structure formed of plated layers is provided. The semiconductor lead frame has the structure of multi-plated layers in which a Ni plated layer, a Pd strike plated layer, and a Pd--X alloy plated layer are deposited on a substrate in the described order. In such a multi-plated layer structure, the Pd strike plated layer covers the porous surface of the Ni plated layer and decreases the surface roughness. Since the thickness of the outer Pd--X alloy plated layer can be maintained uniform due to the Pd strike plated layer, corrosion durability and bonding characteristics are enhanced, thus minimizing the generation and progress of cracks.