Abstract: A positive electrode active material for a lithium secondary battery has secondary micro particles having an average particle size (D50) of 1 to 10 ?m formed by agglomeration of primary macro particles having an average particle size (D50) of 0.5 to 3 ?m and a lithium-M oxide coating layer on all or part of a surface, wherein M is at least one selected from the group consisting of boron, cobalt, manganese and magnesium. The secondary macro particles have an average particle size (D50) of 5 to 20 ?m formed by agglomeration of primary micro particles having a smaller average particle size (D50) than the primary macro particles. The primary macro particles and the primary micro particles are represented by LiaNi1?b?c?dCobMncQdO2+?, wherein 1.0?a?1.5, 0<b<0.2, 0<c<0.2, 0?d?0.1, 0<b+c+d?0.2, ?0.1???1.0, and Q is at least one type of metal selected from the group consisting of Al, Mg, V, Ti and Zr.

Abstract: Disclosure provides a two-segment electromagnet stirring member, and a two-segment electromagnet semi-solid die-casting apparatus including the same, and a die-casting method using the same. The two-segment electromagnet stirring member includes a plurality of magnetic field generation parts therein, and includes a first electromagnetic stirring part and a second electromagnetic stirring part separated from each other. The first electromagnetic stirring part and the second electromagnetic stirring part are coupled to each other in a ring shape to surround an outer circumferential surface of a sleeve to perform electromagnetic stirring to molten metal in the sleeve, and are coupled to each other so as to position the plurality of magnetic field generation parts at radially equal gaps around the sleeve.

Abstract: Provided with a semiconductor device which is adopted to reduce the resistance of a well without the need to increase the concentration of dopants in forming the well by depositing conductive layer patterns and then growing an epitaxial layer on the conductive layer patterns, the semiconductor device including: conductive layer patterns formed on a semiconductor substrate; a semiconductor layer formed on the semiconductor substrate and the conductive layer patterns; well regions formed in the semiconductor layer and the semiconductor substrate such that the conductive layer patterns are positioned at the bottoms of the well regions; and gate and source/drain electrodes formed on the well regions, and a method for fabricating the semiconductor device including the steps of: forming conductive layer patterns on a semiconductor substrate; forming a semiconductor layer on the semiconductor substrate including the conductive layer patterns; forming well regions in the semiconductor layer and the semiconductor subs

Abstract: Provided with a semiconductor device which is adopted to reduce the resistance of a well without the need to increase the concentration of dopants in forming the well by depositing conductive layer patterns and then growing an epitaxial layer on the conductive layer patterns, the semiconductor device including: conductive layer patterns formed on a semiconductor substrate; a semiconductor layer formed on the semiconductor substrate and the conductive layer patterns; well regions formed in the semiconductor layer and the semiconductor substrate such that the conductive layer patterns are positioned at the bottoms of the well regions; and gate and source/drain electrodes formed on the well regions, and a method for fabricating the semiconductor device including the steps of: forming conductive layer patterns on a semiconductor substrate; forming a semiconductor layer on the semiconductor substrate including the conductive layer patterns; forming well regions in the semiconductor layer and the semiconductor subs