Abstract: A method for manufacturing a hot-stamped part includes reheating a steel slab at a temperature of 1,200° C. to 1,250° C., the steel slab including, by wt %, 0.20 to 0.50% carbon (C), 0.05 to 1.00% silicon (Si), 0.10 to 2.50% manganese (Mn), more than 0% and not more than 0.015% phosphorus (P), more than 0% and not more than 0.005% sulfur (S), 0.05 to 1.00% chromium (Cr), 0.001 to 0.009% boron (B), 0.01 to 0.09% titanium (Ti), and a balance of iron (Fe) and inevitable impurities; finish-rolling the reheated steel slab at a temperature of 880° C. to 950° C.; cooling the hot-rolled steel plate without using water, and coiling the cooled steel plate at a temperature of 680° C. to 800° C. to form a hot-rolled decarburized layer on a surface of the steel plate; pickling the coiled steel plate, followed by cold rolling; annealing the cold-rolled steel plate in a reducing atmosphere; plating the annealed steel plate; and hot-stamping the plated steel plate.

Abstract: A method for manufacturing a hot-stamped part includes reheating a steel slab at a temperature of 1,200° C. to 1,250° C., the steel slab including, by wt %, 0.20 to 0.50% carbon (C), 0.05 to 1.00% silicon (Si), 0.10 to 2.50% manganese (Mn), more than 0% and not more than 0.015% phosphorus (P), more than 0% and not more than 0.005% sulfur (S), 0.05 to 1.00% chromium (Cr), 0.001 to 0.009% boron (B), 0.01 to 0.09% titanium (Ti), and a balance of iron (Fe) and inevitable impurities; finish-rolling the reheated steel slab at a temperature of 880° C. to 950° C.; cooling the hot-rolled steel plate without using water, and coiling the cooled steel plate at a temperature of 680° C. to 800° C. to form a hot-rolled decarburized layer on a surface of the steel plate; pickling the coiled steel plate, followed by cold rolling; annealing the cold-rolled steel plate in a reducing atmosphere; plating the annealed steel plate; and hot-stamping the plated steel plate.

Abstract: Provided is a light emitting device package including: a light emitting device; a light transmitting plate body formed above the light emitting device and including a lower light transmitting plate, a plurality of side light transmitting plates formed on an upper surface of the lower light transmitting plate, an upper light transmitting plate corresponding to the upper surface of the lower light transmitting plate and formed on upper surfaces of the plurality of side light transmitting plates, and an empty portion formed inside; a wavelength converting unit including a first wavelength converting layer formed on a lower surface of the lower light transmitting plate and a second wavelength converting layer formed in the empty portion and covering the upper surface of the lower light transmitting plate; and an adhesive layer formed between the first wavelength converting layer and the light emitting device, in which the adhesive layer is formed on at least one side and an upper surface of the light emitting dev

Abstract: Provided is a light emitting device package including: a light emitting device; a light transmitting plate body formed above the light emitting device and including a lower light transmitting plate, a plurality of side light transmitting plates formed on an upper surface of the lower light transmitting plate, an upper light transmitting plate corresponding to the upper surface of the lower light transmitting plate and formed on upper surfaces of the plurality of side light transmitting plates, and an empty portion formed inside; a wavelength converting unit including a first wavelength converting layer formed on a lower surface of the lower light transmitting plate and a second wavelength converting layer formed in the empty portion and covering the upper surface of the lower light transmitting plate; and an adhesive layer formed between the first wavelength converting layer and the light emitting device, in which the adhesive layer is formed on at least one side and an upper surface of the light emitting dev

Abstract: Provided is a light emitting device package including: a light emitting device; a light transmitting plate body formed above the light emitting device and including a lower light transmitting plate, a plurality of side light transmitting plates formed on an upper surface of the lower light transmitting plate, an upper light transmitting plate corresponding to the upper surface of the lower light transmitting plate and formed on upper surfaces of the plurality of side light transmitting plates, and an empty portion formed inside; a wavelength converting unit including a first wavelength converting layer formed on a lower surface of the lower light transmitting plate and a second wavelength converting layer formed in the empty portion and covering the upper surface of the lower light transmitting plate; and an adhesive layer formed between the first wavelength converting layer and the light emitting device, in which the adhesive layer is formed on at least one side and an upper surface of the light emitting dev

Abstract: Embodiments include a method for manufacturing a hot-rolled coil and a method for correcting the shape of a hot-rolled coil. In one embodiment, the method for manufacturing the hot-rolled coil includes the steps of: reheating a steel slab comprising 0.18 to 0.56 wt % carbon (C), 0.1 to 0.5 wt % silicon (Si), 0.7 to 6.5 wt % manganese (Mn), more than 0 wt % but not more than 0.02 wt % phosphorus (P), more than 0 wt % but not more than 0.02 wt % sulfur (S), more than 0 wt % but not more than 0.3 wt % chromium (Cr), more than 0 wt % but not more than 0.004 wt % boron (B), 0.01 to 0.04 wt % titanium (Ti), and the remainder being iron (Fe) and other inevitable impurities; hot-rolling the steel slab at a finishing mill delivery temperature of 850° C. to 950° C., thereby forming a hot-rolled sheet; and cooling the hot-rolled sheet, followed by coiling at a coiling temperature of 700° C. or higher.

Abstract: A method of cleaning a chamber used for annealing doped wafer substrates. In one embodiment the method provides removing dopants deposited in an annealing chamber after an annealing process of a doped substrate by flowing one or more volatilizing gases into the annealing chamber, applying heat to volatilize the deposited dopants in the annealing chamber, and exhausting the chamber to remove volatilized dopants from the annealing chamber.

Abstract: Provided is a method of providing learning contents by a server. The method includes providing a list of steps of review contents to a user terminal; receiving a selection of a step on the list of the steps of the review contents from the user terminal, and providing the review contents of the selected step to the user terminal; and providing a point score according to a learning performance on each step of the review contents by a user, and an evaluation score according to a correct answer rate, to the user terminal.

Abstract: A method of cleaning a chamber used for annealing doped wafer substrates. In one embodiment the method provides removing dopants deposited in an annealing chamber after an annealing process of a doped substrate by flowing one or more volatilizing gases into the annealing chamber, applying heat to volatilize the deposited dopants in the annealing chamber, and exhausting the chamber to remove volatilized dopants from the annealing chamber.

Abstract: Disclosed are an apparatus and method of determining an optimal cyclic delay value. The method of determining the optimal cyclic delay value includes determining a Signal-to-Interference and Noise Ratio (SINR) function depending on a diversity order; determining a channel estimation error variance function; and determining an SINR being required for a system according to the SINR function and the channel estimation error variance function.

Abstract: Disclosed are an apparatus and method of determining an optimal cyclic delay value. The method of determining the optimal cyclic delay value includes determining a Signal-to-Interference and Noise Ratio (SINR) function depending on a diversity order; determining a channel estimation error variance function; and determining an SINR being required for a system according to the SINR function and the channel estimation error variance function.

Abstract: A method of cleaning a chamber used for annealing doped wafer substrates. In one embodiment the method provides removing dopants deposited in an annealing chamber after an annealing process of a doped substrate by flowing one or more volatilizing gases into the annealing chamber, applying heat to volatilize the deposited dopants in the annealing chamber, and exhausting the chamber to remove volatilized dopants from the annealing chamber.

Abstract: Provided are 1-phenylpiperidin-3-one derivatives and pharmaceutically acceptable salts thereof, having cysteine protease inhibitory activity, pharmaceutical compositions containing the same as an active ingredient, and processes for the preparation thereof.

Abstract: The present invention relates to a device for measuring swing velocity of a golf club head sing a resonance circuit. The device according to the present invention comprises a resonance circuit portion for detecting impedance change amount and voltage signal by the amount of impedance change in response to the approach of a golf club head having conductivity; an amplification portion for amplifying the voltage signal detected by the resonance circuit portion, a wave shaping portion for outputting the voltage signal as pulse-shaped peak wave; a mircocomputer for controlling the operation of calculating the time difference between the peak waves and indicating swing velocity; and a display portion for displaying the swing velocity data according to the output signal of the microcomputer.