Patents by Inventor Joong Seob Yang

Joong Seob Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11010289
    Abstract: A data storage device includes a nonvolatile memory apparatus suitable for accessing a target region corresponding to an access command, and a processor suitable for calculating a first hash value corresponding to the target region based on a first hash function, and updating an access count that is indexed by the first hash value.
    Type: Grant
    Filed: February 28, 2019
    Date of Patent: May 18, 2021
    Assignee: SK hynix Inc.
    Inventors: Se Hyun Kim, Joong Seob Yang, Eui Jin Kim, Jong Min Lee
  • Publication number: 20190196954
    Abstract: A data storage device includes a nonvolatile memory apparatus suitable for accessing a target region corresponding to an access command, and a processor suitable for calculating a first hash value corresponding to the target region based on a first hash function, and updating an access count that is indexed by the first hash value.
    Type: Application
    Filed: February 28, 2019
    Publication date: June 27, 2019
    Inventors: Se Hyun KIM, Joong Seob YANG, Eui Jin KIM, Jong Min LEE
  • Patent number: 10289328
    Abstract: A method for managing a memory includes: receiving a write request from a host; selecting an internal storage region among a plurality of internal storage regions of the memory based on data characterization information of a data received from a host according to the write request from a host; generating a metadata including the data characterization information of the data according to the write request; and storing the metadata along with the data in the selected internal storage region.
    Type: Grant
    Filed: August 23, 2016
    Date of Patent: May 14, 2019
    Assignee: SK hynix Inc.
    Inventors: Hyun-Jun Kim, Joong-Seob Yang
  • Patent number: 9837166
    Abstract: A data storage device includes a controller configured to control data to be written in a first page; and a nonvolatile memory device configured to perform a write operation for writing the data, according to whether the first page is written or not, wherein the nonvolatile memory device provides a state information including an overwrite information meaning whether the write operation has caused an overwrite, to the controller.
    Type: Grant
    Filed: June 17, 2016
    Date of Patent: December 5, 2017
    Assignee: SK Hynix Inc.
    Inventors: Hyun Jun Kim, Byeong Gyu Park, Joong Seob Yang
  • Publication number: 20170271024
    Abstract: A data storage device includes a controller configured to control data to be written in a first page; and a nonvolatile memory device configured to perform a write operation for writing the data, according to whether the first page is written or not, wherein the nonvolatile memory device provides a state information including an overwrite information meaning whether the write operation has caused an overwrite, to the controller.
    Type: Application
    Filed: June 17, 2016
    Publication date: September 21, 2017
    Inventors: Hyun Jun KIM, Byeong Gyu PARK, Joong Seob YANG
  • Publication number: 20170255413
    Abstract: A method for managing a memory includes: receiving a write request from a host; selecting an internal storage region among a plurality of internal storage regions of the memory based on data characterization information of a data received from a host according to the write request from a host; generating a metadata including the data characterization information of the data according to the write request; and storing the metadata along with the data in the selected internal storage region.
    Type: Application
    Filed: August 23, 2016
    Publication date: September 7, 2017
    Inventors: Hyun-Jun KIM, Joong-Seob YANG
  • Patent number: 9678827
    Abstract: A data storage device includes a controller configured to update an access request count and an access count corresponding to a target region based on an access request for the target region, and initialize the access count each time the access request count reaches a first threshold, and a nonvolatile memory apparatus including the target region, and configured to access the target region based on a control of the controller.
    Type: Grant
    Filed: August 6, 2015
    Date of Patent: June 13, 2017
    Assignee: SK Hynix Inc.
    Inventors: Se Hyun Kim, Joong Seob Yang, Eui Jin Kim, Jong Min Lee, Jeong Soon Kwak
  • Publication number: 20160098214
    Abstract: A data storage device includes a nonvolatile memory apparatus suitable for accessing a target region corresponding to an access command, and a processor suitable for calculating a first hash value corresponding to the target region based on a first hash function, and updating an access count that is indexed by the first hash value.
    Type: Application
    Filed: January 20, 2015
    Publication date: April 7, 2016
    Inventors: Se Hyun KIM, Joong Seob YANG, Eui Jin KIM, Jong Min LEE
  • Publication number: 20160098201
    Abstract: A data storage device includes a controller configured to update an access request count and an access count corresponding to a target region based on an access request for the target region, and initialize the access count each time the access request count reaches a first threshold, and a nonvolatile memory apparatus including the target region, and configured to access the target region based on a control of the controller.
    Type: Application
    Filed: August 6, 2015
    Publication date: April 7, 2016
    Inventors: Se Hyun KIM, Joong Seob YANG, Eui Jin KIM, Jong Min LEE, Jeong Soon KWAK
  • Publication number: 20150127887
    Abstract: An operating method of a data storage system may include detecting a sudden power-off during a program operation on pages in a memory block, identifying a dummy program target page in the memory block when power is on after the sudden power-off, and performing the program operation on the dummy program target page using dummy data, and performing the program operation on pages in the memory block subsequent to the dummy program target page using normal data.
    Type: Application
    Filed: April 30, 2014
    Publication date: May 7, 2015
    Applicant: SK hynix Inc.
    Inventors: Tae Hoon KIM, Joong Seob YANG
  • Patent number: 8817561
    Abstract: A method for estimating channel characteristics of a nonvolatile memory device including a plurality of memory cells includes the steps of: calculating first threshold voltage distributions of the memory cells programmed according to input data, based on the input data and a physical structure of the memory cells; calculating second threshold voltage distributions of the memory cells, based on output data and the physical structure of the memory cells; and analyzing the relation between the first and second threshold voltage distributions, using a mask.
    Type: Grant
    Filed: February 14, 2013
    Date of Patent: August 26, 2014
    Assignees: SK Hynix Inc., Korea Advanced Institute of Science and Technology
    Inventors: Seok Hwan Choi, Joong Seob Yang, Seung Ho Chang, Sang Sik Kim, Sang Chul Lee, Ho Yeon Lee, Jaekyun Moon, Jaehyeong No
  • Publication number: 20140010031
    Abstract: A method for estimating channel characteristics of a nonvolatile memory device including a plurality of memory cells includes the steps of: calculating first threshold voltage distributions of the memory cells programmed according to input data, based on the input data and a physical structure of the memory cells; calculating second threshold voltage distributions of the memory cells, based on output data and the physical structure of the memory cells; and analyzing the relation between the first and second threshold voltage distributions, using a mask.
    Type: Application
    Filed: February 14, 2013
    Publication date: January 9, 2014
    Applicants: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY, SK HYNIX INC.
    Inventors: Seok Hwan CHOI, Joong Seob YANG, Seung Ho CHANG, Sang Sik KIM, Sang Chul LEE, Ho Yeon LEE, Jaekyun MOON, Jaehyeong NO
  • Patent number: 8111556
    Abstract: A nonvolatile memory device and a method of operating the same. The nonvolatile memory device includes a memory cell array including memory cells for storing data, a temperature sensor and a controller. The temperature sensor outputs a temperature detection signal according to ambient temperatures while changing one or more pieces of reference voltage information, which are previously stored, when data is programmed into the memory cell array. The controller performs a verify operation of the program using a fast verify method and decides the number of steps which are comprised in step-shaped verify voltage pulse of the fast verify method according to the temperature detection signal.
    Type: Grant
    Filed: February 10, 2009
    Date of Patent: February 7, 2012
    Assignee: Hynix Semiconductor Inc.
    Inventors: In Soo Wang, Joong Seob Yang
  • Patent number: 8014207
    Abstract: A nonvolatile memory device includes an encoder configured to perform a scramble operation on input data, a digital sum value (DSV) generator configured to generate a DSV indicating a difference between a number of data ‘0’ and a number of data ‘1’ in the input data encoded by the encoder, a main cell unit of a page of a memory cell array, wherein the main cell unit is configured to store the input data encoded by the encoder, a spare cell unit of the page, wherein the spare cell unit is configured to store the DSV generated by the DSV generator, and a read voltage setting unit configured to determine a read voltage for the page by comparing a DSV generated from the stored data of the main cell unit and the stored DSV of the spare cell unit.
    Type: Grant
    Filed: December 30, 2009
    Date of Patent: September 6, 2011
    Assignee: Hynix Semiconductor Inc.
    Inventors: Seung Han Ryu, Joong Seob Yang, Seung Jae Chung
  • Patent number: 7986552
    Abstract: A nonvolatile memory device includes a data conversion unit including an encoder and a decoder. The encoder sets data for each of word lines and creates second data to be programmed into a plurality of memory cells by performing a logical operation on the set data and first data input for programming. The decoder creates the first data by performing a logical operation on the second data that is read from the memory cells and the set data.
    Type: Grant
    Filed: March 10, 2009
    Date of Patent: July 26, 2011
    Assignee: Hynix Semiconductor Inc.
    Inventors: Tao Ho Shin, Joong Seob Yang, Jun Seop Chung, You Sung Kim
  • Patent number: 7826277
    Abstract: A non-volatile memory device is disclosed. The non-volatile memory device includes an encoder configured to set random data in a unit of a word line, and generate second data to be programmed in a memory cell by performing logic operation about the random data and first data inputted for program, and a data converting circuit configured to have a decoder for generating the first data by performing logic operation about the second data read from the memory cell and the random data.
    Type: Grant
    Filed: June 13, 2008
    Date of Patent: November 2, 2010
    Assignee: Hynix Semiconductor Inc.
    Inventors: Tae Ho Shin, Joong Seob Yang, Jun Seop Chung, You Sung Kim
  • Patent number: 7796434
    Abstract: Program voltages of a non-volatile memory device are controlled variably according to a program/erase operation count. The non-volatile memory device includes a program voltage supply unit for applying a program voltage to a memory cell, a program/erase count storage unit for storing a total program/erase operation count of the non-volatile memory device, a program start voltage storage unit for storing levels of program start voltages to be differently supplied according to the program/erase operation count, and a program voltage controller for controlling the program start voltage according to the program/erase operation count.
    Type: Grant
    Filed: March 14, 2008
    Date of Patent: September 14, 2010
    Assignee: Hynix Semiconductor Inc.
    Inventors: Chae Kyu Jang, Joong Seob Yang, Duck Ju Kim, Jong Hyun Wang, Seong Hun Park
  • Publication number: 20100182830
    Abstract: A nonvolatile memory device includes an encoder configured to perform a scramble operation on input data, a digital sum value (DSV) generator configured to generate a DSV indicating a difference between a number of data ‘0’ and a number of data ‘1’ in the input data encoded by the encoder, a main cell unit of a page of a memory cell array, wherein the main cell unit is configured to store the input data encoded by the encoder, a spare cell unit of the page, wherein the spare cell unit is configured to store the DSV generated by the DSV generator, and a read voltage setting unit configured to determine a read voltage for the page by comparing a DSV generated from the stored data of the main cell unit and the stored DSV of the spare cell unit.
    Type: Application
    Filed: December 30, 2009
    Publication date: July 22, 2010
    Inventors: Seung Han RYU, Joong Seob Yang, Seung Jae Chung
  • Publication number: 20090296465
    Abstract: A nonvolatile memory device and a method of operating the same. The nonvolatile memory device includes a memory cell array including memory cells for storing data, a temperature sensor and a controller. The temperature sensor outputs a temperature detection signal according to ambient temperatures while changing one or more pieces of reference voltage information, which are previously stored, when data is programmed into the memory cell array. The controller performs a verify operation of the program using a fast verify method and decides the number of steps which are comprised in step-shaped verify voltage pulse of the fast verify method according to the temperature detection signal.
    Type: Application
    Filed: February 10, 2009
    Publication date: December 3, 2009
    Applicant: HYNIX SEMICONDUCTOR, INC.
    Inventors: In Soo WANG, Joong Seob Yang
  • Publication number: 20090225596
    Abstract: A non-volatile memory device is disclosed. The non-volatile memory device includes an encoder configured to set random data in a unit of a word line, and generate second data to be programmed in a memory cell by performing logic operation about the random data and first data inputted for program, and a data converting circuit configured to have a decoder for generating the first data by performing logic operation about the second data read from the memory cell and the random data.
    Type: Application
    Filed: June 13, 2008
    Publication date: September 10, 2009
    Applicant: Hynix Semiconductor Inc.
    Inventors: Tae Ho SHIN, Joong Seob Yang, Jun Seop Chung, You Sung Kim