Patents by Inventor Joongeol KIM

Joongeol KIM has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210280666
    Abstract: A display panel includes a base layer, a signal line which is disposed on the base layer and includes a first layer including aluminum and a second layer disposed directly on the first layer and consisting of niobium, a first thin film transistor connected to the signal line, a second thin film transistor disposed on the base layer, a capacitor electrically connected to the second thin film transistor, and a light emitting element electrically connected to the second thin film transistor.
    Type: Application
    Filed: December 20, 2018
    Publication date: September 9, 2021
    Inventors: Sangwoo SOHN, Dokeun SONG, Sukyoung YANG, Dongmin LEE, Sangwon SHIN, Kyeongsu KO, Sanggab KIM, Hongsick PARK, Hyuneok SHIN, Joongeol LEE
  • Publication number: 20200358040
    Abstract: A method of manufacturing a thin film transistor includes: forming an active pattern on a substrate; forming an insulating layer and a gate electrode layer on the active pattern in order; forming a photoresist pattern on the gate electrode layer; forming a preliminary gate electrode by wet etching the gate electrode layer using the photoresist pattern; forming an insulating pattern by dry etching the insulating layer using the photoresist pattern and the preliminary gate electrode; and forming a gate electrode by wet etching a side surface of the preliminary gate electrode using the photoresist pattern.
    Type: Application
    Filed: March 27, 2020
    Publication date: November 12, 2020
    Inventors: Keum Hee LEE, Joongeol KIM, Kap Soo YOON, Woo Geun LEE, Seung-Ha CHOI, Jiyun HONG
  • Patent number: 9048326
    Abstract: A thin film transistor substrate includes a substrate; a gate electrode on the substrate; a semiconductor pattern on the gate electrode; a source electrode on the semiconductor pattern; a drain electrode on the semiconductor pattern and spaced apart from the source electrode; a pixel electrode connected to the drain electrode; and a common electrode partially overlapped with the pixel electrode. The semiconductor pattern is in a same layer of the thin film transistor substrate as the pixel electrode and has an electrical property different from an electrical property of the pixel electrode.
    Type: Grant
    Filed: December 11, 2012
    Date of Patent: June 2, 2015
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Youngjoo Choi, Gwang-Bum Ko, GwonHeon Ryu, Joongeol Kim, Do-Hyun Kim, Sang-Moon Moh, WooGeun Lee, WonHee Lee
  • Publication number: 20130228772
    Abstract: A thin film transistor substrate includes a substrate; a gate electrode on the substrate; a semiconductor pattern on the gate electrode; a source electrode on the semiconductor pattern; a drain electrode on the semiconductor pattern and spaced apart from the source electrode; a pixel electrode connected to the drain electrode; and a common electrode partially overlapped with the pixel electrode. The semiconductor pattern is in a same layer of the thin film transistor substrate as the pixel electrode and has an electrical property different from an electrical property of the pixel electrode.
    Type: Application
    Filed: December 11, 2012
    Publication date: September 5, 2013
    Applicant: SAMSUNG DISPLAY CO., LTD.
    Inventors: Youngjoo CHOI, Gwang-Bum KO, GwonHeon RYU, Joongeol KIM, Do-Hyun KIM, Sang-Moon MOH, WooGeun LEE, WONHEE LEE